• Title/Summary/Keyword: vertical trench-Hall device

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Characteristic Analysis of The Vertical Trench Hall Sensor using SOI Structure (SOI 구조를 이용한 수직 Hall 센서에 대한 특성 연구)

  • 이지연;박병휘
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.4
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    • pp.25-29
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    • 2002
  • We have fabricated a vertical trench Hall device which is sensitive to the magnetic field parallel to the sensor surface. The vertical trench Hall device has been built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT has been measured.

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The Vertical Trench Hall-Effect Device Using SOI Wafer (SOI Wafer를 사용한 트렌치 구조의 수직 Hall 소자의 제작)

  • Park, Byung-Hwee;Jung, Woo-Chul;Nam, Tae-Chul
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2023-2025
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    • 2002
  • We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

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The Fabrications of Vertical Trench Hall-Effect Device for Non-contact Angular Position Sensing Applications (비 접촉 각도 센서 응용을 위한 수직 Hall 소자의 제작)

  • Park, Byung-Hwee;Jung, Woo-Chul;Nam, Tae-Chul
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.251-253
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    • 2002
  • We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

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Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor

  • Oh, Sein;Jang, Byung-Jun;Chae, Hyungil
    • Journal of electromagnetic engineering and science
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    • v.18 no.1
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    • pp.35-40
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    • 2018
  • This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.