• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2002.09a
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• pp.250-252
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• 2002

The goals of environmental monitoring are to locate and quantify the significant contamination, estimate the fate and transport, estimate the potential exposure and risks to humans and the environment, and track the performance of various remedial technologies. In this study, ceramic gas sensor system is proposed to enhance the effectiveness of soil vapor extraction (SVE) process by monitoring the effluent gas. SVE is a technique that is widely used to remediate unsaturated soils contaminated with volatile organic contaminants. The sensor response for benzene, toluene, and xylene, the representative effluent gas compositions of SVE process, was evaluated using the proposed sensor system. As a result, it was verified that the response of sensor was increased or decreased very sensitively according to the change of the effluent gas concentration. Besides, the sensor could detect the difference over a wide range of concentration and it was more sensitive in order of xylene, toluene, and benzene. It is expected that this VOC analysis method results in field monitoring costs saying and appropriate immediate action for process control. More detailed experiments are being conducted in our research group.

• The KSFM Journal of Fluid Machinery
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• v.18 no.1
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• pp.65-71
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• 2015

The purpose of this study is to investigate cavitating flow of the multistage centrifugal pump. Cavitation is observed in the impeller leading edge and trailing edge of the suction area. Head coefficients are measured under different flow operating conditions. The Rayleigh-Plesset cavitation model is adapted to predict the occurrence of cavitation in the pump. The two-phase gas-liquid homogeneous CFD method is used to analyze the centrifugal pump performances with two equation transport turbulence model. The simulations are carried out with three different flow coefficients such as 0.103, 0.128 and 0.154. The occurrence of cavitation described according to water vapor volume fraction. The head versus NPSH (Net Positive Suction Head) also measured using different flow coefficients. Development of cavitation in the centrifugal pump impellerI is discussed. It is showed that the simulation represents the head drop about 3%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2001-2003
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• 2005

Various organic acid were used in order to prepare new metalorganic deposition solution for high quality $REBa_2Cu_3O_{7-{\delta}}$ (RE=Y, Eu, Gd) films. Prepared fluorine free MO precursor solution was coated on single crystal (001) $LaAlO_3$ (LAO) by dip coating method. Processing parameters such as oxygen partial pressure, water vapor, ramping rate and pyrolysis temperature etc havebeen controlled in order to make high $J_c$ films with a good epitaxial relationship with substrate. 0.5 micron-thick film was obtained by single coating and no crack appeared after calcination. Oxygen partial pressure was varied in the range of $100{\sim}1,000 ppm$ and conversion heat treatment was carried out at the temperature of $725{\sim}765^{\circ}C$. A critical transition temperature $(T_{c0})$ of 90K and a critical transport current density $(J_c)$ of $>0.5MA/cm^2$ (77K and self-field) were demonstrated for the YBCO film on (001) oriented LAO substrates with a thickness of 0.5 micron. $I_c$ was determined by utilizing a transport measurement. SEM and XRD investigations confirmed that films were grown epitaxially onto the LAO single crystal substrate. It is thought that fluorine free new MOD solutionis promising for high quality REBCO films.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.3
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• pp.343-348
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• 1986

An optical interference method was developed for measuring rapidly growing and evaporating liquid condensate films (e.g., Na$_{2}$SO$_{4}$, $K_{2}$SO$_{4}$) on solid surface exposed to flowing combustion product gases at film thicknesses well below the onset of complications due to run-off. To develop this optical system, this study investigated the optical parameters (e.g., polarization state, incident angle, target roughness, etc.) Trends for the Na$_{2}$SO$_{4}$(l) and $K_{2}$SO$_{4}$(l) deposition rates as a function of target temperature using this optical measuring system agree with the theoretical prediction of the vapor deposition. This study was able to extend the experimental range for vapor plus condensed phase transport and deposition. While previously unable to measure the evaporation rates interferometrically, these rates are estimated from the results of the investigation of polarization states.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.9 no.2
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• pp.134-143
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• 1997

A theoretical and experimental study has been performed to investigate the characteristics of ice-slurry product. By diffusion-controlled model, the possibility of ice slurry has been theoretically anticipated. The water vapor evaporated from the surface of droplets is extracted continuously from the chamber by a vacuum pump. The droplet diameter was measured by silion immersed method. The ice slurry has been obtained by spraying droplets of ethylene-glycol aqueous solution in the chamber where pressure is maintained under the triple point of water. The droplet of which the diameter is $300{\mu}m$, and the initial temperature is $20^{\circ}C$, was changed into ice particle within the chamber of which the height is 1.33m.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.136-140
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• 1998

This work demonstrates a method for modeling of electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions and electron holes. From the polt $\sigma_{tot}$ vs. $po_2\;{1/4}$ in wet atmosphere, thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulas for the calculation of partial conduction were derived based on the defect structure of HTPCs. Illustrative calculation were made for $SrCe_{0.95}Yb_{0.05}O_{2.975}$ system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.263-268
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• 1998

(100) ZnSe crystals with twin and grain free were grown by vapor transport method. The defect in (100) ZnSe crystals was investigated by FWHM of X-ray Rocking Curve. The growth rate and seed quality are the main parameters of the growth process to obtain the high quality ZnSe crystals. The geometric shape of the grown (100) ZnSe crystal is dependent on the shape of seed, isothermal line in furnace and the growth rate of each surface in crystal.