• 제목/요약/키워드: vapor pressures

검색결과 141건 처리시간 0.022초

고온고압에서의 목재 평형함수율 측정 (Measurement of Equilibrium Moisture Content of Wood at High Temperatures and Vapor Pressures)

  • 이원희;히사시 아베;나오히로 쿠로다
    • Journal of the Korean Wood Science and Technology
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    • 제26권4호
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    • pp.1-5
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    • 1998
  • In this study, it was examined the method to estimate equilibrium moisture content(EMC) at high vapor pressures and high temperatures above $100^{\circ}C$. The material used for the experiment was Sugi(Cryptomeria japonica). EMC was investigated at temperatures ranging from $100^{\circ}C$ to $160^{\circ}C$ and under saturated vapor pressures above 1 atm. The correlation between temperatures and vapor pressures have a good agreement with those observed by thermocouple and pressure gauge in the air state of autoclave, respectively. A sensitivity of quartz spring was 65mm/g. Moisture content(MC)s calculated from the quartz spring elongation by vapor sorption showed a good agreement with MCs by oven-dried method. Using this system, it was found that EMC at high vapor pressures and high temperatures above $100^{\circ}C$ were higher than EMC of wood in 1 atm pressure conditions. With this system, therefore, it was concluded that the EMCs of wood and wood-based materials at high temperatures were able to be evaluated.

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Convection in the growth of zinc telluride single crystal by physical vapor transport

  • Kim, Geug-Tae
    • 한국결정성장학회지
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    • 제13권4호
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    • pp.187-198
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    • 2003
  • Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

Studies on Nusselt and Sherwood number for diffusion-advective convection during physical vapor transport of Hg2Br2

  • Kim, Geug Tae;Kwon, Moo Hyun
    • 한국결정성장학회지
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    • 제31권3호
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    • pp.127-136
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    • 2021
  • This paper is dedicated to numerical simulation for diffusion-advective convection in a square cavity during physical vapor transport of Hg2Br2. Flow characteristics of the temperature difference between the source and crystal regions, 50℃ (300℃ → 250℃), partial pressures of component argon of 20 Torr and 100 Torr are investigated and presented as velocity vectors and streamlines, isotherms and iso-mass concentrations contours. Moreover, alterations of average Nusselt and average Sherwood numbers with (a) the source and crystal regions, (b) the pressures of component argon of 20 Torr and 100 Torr are analyzed and addressed in details. Both average Nusselt and average Sherwood numbers are seen to decrease with the increasing values of the partial pressures of component argon. Also, it is found that for the two different partial pressures of component argon, average Nusselt numbers at the source region are greater than at the crystal region, and inversely, average Sherwood numbers at the crystal region are greater than the source region by a factor of 3.

유동법에 의한 용융 ZnCl2 및 FeCl2의 증기압 측정 (Measurement of Vapor Pressure of Molten ZnCl2 and FeCl2 by the Transpiration Method)

  • 이우상;김원용;정우광
    • 한국재료학회지
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    • 제20권3호
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    • pp.111-116
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    • 2010
  • Chloride-based fluxes such as NaCl-KCl are used in the refining of Al melt. The vapor pressure of the chloride is one of the fundamental pieces of information required for such processes, and is generally high at elevated temperatures. In order to measure the vapor pressure for chlorides, the apparatus for the transpiration method was assembled in the present study. The vapor pressure of $ZnCl_2$ and $FeCl_2$, which is related with the process of aluminum refining and the recovery of useful elements from iron and steel industry by-products, was also measured. In the measurement of vapor pressure by the transpiration method, the powder of $ZnCl_2$ or $FeCl_2$ in a alumina boat was loaded in the uniform zone of the furnace with a stream of Ar. The weight loss of $ZnCl_2$ and $FeCl_2$ after holding was measured by changing the flow rate of Ar gas (10 sccm -230 sccm), and the partial pressures of $ZnCl_2$ and $FeCl_2$ were calculated. The partial pressures within a certain range were found to be independent of the flow rate of Ar at different temperatures. The vapor pressures were measured in the temperature range of 758-901K for $ZnCl_2$ and 963-983K for $FeCl_2$. The measured results agreed well with those in the literature.

나프타분해플랜트의 부탄추출공정에서 부탄증기의 연속누출에 의한 증기운 폭발사고의 영향평가 (The Consequence Analysis for Unconfined Vapor Cloud Explosion Accident by the Continuous Release of Butane Vapor in the Debutanizing Process of Naphtha Cracking Plant)

  • 손민일;이헌창;장서일;김태옥
    • 대한안전경영과학회지
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    • 제2권4호
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    • pp.33-43
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    • 2000
  • The consequence analysis for the unconfined vapor cloud explosion(UVCE) accident by the continuous release of butane vapor was performed and effects of process parameters on consequences were analyzed in standard conditions. For the case of continuous release(87.8 kg/s) of butane vapor at 8 m elevated height in the debutanizing process of tile naphtha cracking plant operating at 877 kPa & 346.75 K, we found that combustion ranges of dispersed vapor estimated by HMP model were 11.2~120.2 m and overpressures estimated by TNT equivalency model at 200 m were about 37.35~55.1 kPa. Also, overpressures estimated by Model UVCE I based on advective travel time to $X_{LFL}$ were smaller than those estimated by Model UVCE IIbased on real travel time between $X_{UFL}$ and $X_{LFL}$. At the same time, damage intensities at 200 m and effect ranges by overpressure could be predicted. Furthermore, simulation results showed that effects of operating pressures on consequences were larger than those of operating temperatures and results of accidents were increased with increasing operating pressures. At this time, sensitivities of overpressures for UVCE accident by the continuous release were about 5 kPa/atm.

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농약 Chlorothalonil 과 Command 의 수용성 및 증기압 (Water Solubilities and Vapor Pressures of Chlorothalonil and Command)

  • 김균;김영배;김용화;노정구
    • 한국환경농학회지
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    • 제6권2호
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    • pp.84-93
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    • 1987
  • Chlorothalonil 과 Command 의 수용성과 증기압을 미국 EPA 와 OECD의 방법에 준하여 측정하였다. 두 화합물의 수용성은 문헌치와 잘 일치하였다. 그러나 chlorothalonil의 증기압은 handbook 에 나타난 수치보다 5,000배 낮았고($25^{\circ}C$에서 $2{\times}10torr$)의 Command 증기압은 100배 이상 낮음($45^{\circ}C$에서 $1{\times}10\;torr$ 이하)을 발견하였다. 따라서 handbook 류의 문헌의 물리화학적 특성치를 이용하여 환경동태를 예측하는 데는 주의를 요한다. 이상의 실험을 통하여 실험상의 난점들을 파악할 수 있었고 미국내에서 Command 가 주위작물에 준 표백현상은 증기확산에 의한 것이라기 보다는 살포시 유실에 의한 현상일 가능성이 높을 것으로 추론하였다. 이러한 접근방법은 새로운 화학물질의 개발단계에서 환경동태의 예측, 기존 화학물질의 오염가능성 예측, 오염저감 대책의 제시에 기초가 될 것으로 사료된다.

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금속산화물의 열역학적 휘발 거동 및 휘발 산화 공정의 조건 분석 (Analyses of Thermodynamic Vaporization Behaviour and Voloxidaion Conditions for Metal Oxides)

  • 이영우;박소영;박병흥
    • 융복합기술연구소 논문집
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    • 제3권2호
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    • pp.7-10
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    • 2013
  • Metal oxides are known as stable materials during a thermal treatment. However, some oxides are readily evaporated at high temperatures. A voloxidation process is a head-end process for a pyroprocessing dealing with spent nuclear fuels (SF). In SFs, fission productions are in the form of oxides and some of them would be evaporated during the voloxidation process. Therefore, it is of importance to analyse the vapor pressures of metal oxides so that the material flows throughout the pyroprocessing could be estimated. In this work, vapor pressures of relevant metal oxides were calculated and presented to draw a baseline on the material flow of the pyroprocessing.

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다성분 염화물계 진공 증류의 잔류 액체 거동 계산 (Residual Liquid Behavior Calculation for Vacuum Distillation of Multi-component Chloride System)

  • 박병흥
    • 방사성폐기물학회지
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    • 제12권3호
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    • pp.179-189
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    • 2014
  • 파이로 공정은 사용후핵연료 관리 이슈 해결과 유용자원 재활용 제고의 목적으로 개발되고 있다. 파이로 공정 중 전해환원 공정은 LiCl을 전해질로 사용하여 산화물을 금속으로 전환시키는 공정으로 금속 전환체에 잔류염이 포함되므로 후속 공정이 요구된다. 진공 증류 공정은 다양한 용융염계에서 적용되어 왔으며 금속 전환체에서도 활용될 수 있다. 전해환원 금속 전환체 잔류염은 LiCl과 알카리 및 알카리토 금속 염화물을 포함한다. 본 연구에서는 이들 염화물들의 증기압을 추산하여 진공 증류 공정에서 잔류 액체의 조성변화를 계산하였다. 증류된 기체가 일정하게 제거되는 조건에서 물질수지와 기-액 평형식을 결합한 모델을 개발하였으며 증기압을 이용하여 무차원 시간에 대한 액체 조성 변화를 계산하였다. 공정 조건 변화 모사를 위해 온도와 용융염 조성을 변화시켜 거동을 비교하였다. 잔류염의 증류는 주성분인 LiCl에 의해 지배되었으며 LiCl 보다 증기압이 높은 CsCl은 쉽게 제거될 것이 예상되었다. 증기압이 유사한 RbCl은 LiCl과 일정한 조성이 유지되었다. 반면 증기압이 낮은 $SrCl_2$$BaCl_2$는 시간에 따라 농축되며 초기 조성이 높은 경우 증류 과정에서 석출될 가능성이 있는 것으로 예상되었다.

나프타분해플랜트의 부탄추출공정에서 부탄증기의 연속누출에 의한 화재사고의 영향평가 (The Consequence Analysis for Fire Accidents by the Continuous Release of Butane Vapor in the Debutanizing Process of Naphtha Cracking Plant)

  • 윤대건;이헌창;함병호;조지훈;김태옥
    • 한국화재소방학회논문지
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    • 제12권2호
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    • pp.3-15
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    • 1998
  • 나프타분해플랜트의 부탄추출공정에서 부탄중기의 연속누출에 의한 제트화재와 플래쉬화재의 사고 결과에 대환 영향을 평가하고 사고결과에 미치는 공정변수들의 영향을 해석하였다. 877 kPa과 346.75 K의 공정조건에서 부탄중기가 87.8 kg/s의 속도로 8m의 높이에서 연속누출되 는 경우에 표준조건으로 껄정한 대기 및 환경조건에서 사고결과를 해석한 결과, 제트화재에서는 화염 의 형태와 크기를 예측할 수 있었으며 누출지점으로부터 200m에서 API모델로 산출한 복사열은 약 5 kW /m2이었고 플래쉬화재가 일어날 수 있는 연소범위는 11.2-120.2 m이었다. 그리고사고결과에 미치는조업합력의 영향은조업은도보다크며 압력이 증가할수록사고결과값이 중가하였다. 이때 플래쉬화재에서 XUFL에 미치는 공정압력의 영향은 Xr.FL에서보다 약 1/10이하를 나 타내었다.

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Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering

  • Jung, Sung Hee;Choi, Ji Hyun;Chung, Chee Won
    • Current Photovoltaic Research
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    • 제4권3호
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    • pp.87-92
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    • 2016
  • The effects of selenization pressure on the structural, optical and electrical properties of the CIGS thin films prepared by RF magnetron sputtering using a single quaternary target were investigated. At selenization pressures lower than atmospheric pressure, CIGS thin films formed non-stoichiometric compounds due to deficiencies of Se vapor. In contrast, when selenization process was conducted at above atmospheric pressure, the residence time of Se vapor inside the tube increased so that the Se element could be incorporated within vacant sites of the CIGS structure, resulting in the formation of stoichiometric CIGS thin films. High quality CIGS thin films could be obtained when the selenization process was performed at pressures greater than atmospheric and $550^{\circ}C$.