• 한국응용과학기술학회지
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• 제24권1호
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• pp.54-60
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• 2007

이 논문에서는 게이트 절연막 위에 vapor deposition polymerization(VDP)방법을 사용하여 성막한 유기 점착층을 진공 열증착하여 유기 박막 트랜지스터(OTFTs)소자를 제작할 수 있음을 증명하였다. 우리가 제작한 Staggered-inverted top-contact 구조를 사용한 유기 박막 트랜지스터는 전기적 output 특성이 포화 영역안에서는 포화곡선을, triode 영역에서는 비선형적인 subthreshold를 확실히 볼 수 있음을 발견했다. $0.2{\mu}m$ 두께를 가진 게이트 절연막위에 유기 점착층을 사용한 OTFTs의 장 효과 정공의 이동도와 문턱전압, 그리고 절멸비는 각각, 약 0.4cm2/Vs, -0.8V, 106 이 측정되었다. 게이트 절연막의 점착층으로써 폴리이미드의 성막을 위해, 스핀코팅 방법 대신 VDP 방법을 도입하였다. 폴리이미드 고분자막은 2,2bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride(6FDA)와 4,4'-oxydianiline(ODA)을 고진공에서 동시에 열 증착 시킨 후, 그리고 $150^{\circ}C$에서 1시간, 다시 $200^{\circ}C$에서 1시간 열처리하여 고분자화된 막을 형성하였다. 그리고 점착층이 OTFTs의 전기적 특성에 주는 영향을 설명하기 위해 비교 연구하였다.

• 한국응용과학기술학회지
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• 제19권4호
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• pp.335-338
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• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1313-1316
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• 2005

In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.402-405
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• 1999

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

• 한국진공학회지
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• 제17권3호
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• pp.195-198
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• 2008

이 논문에서 무기 게이트 인슐레이터 위에 Polyimide 유기 점착층을 성형하여, 고성능의 유기 박막 트렌지스터(OTFT)소자를 제작한 후 450 nm 두께로 폴리이미드를 Vapor deposition polymerization (VDP)방법을 사용하여 패시베이션하였다. 이때 폴리이미드성막을 위해, 스핀코팅 방법 대신 VDP 방법 도입하였다. 이 폴리이미드 고분자막은 2,2 bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA)와 4,4‘-oxydianiline(ODA)을 고진공에서 동시에 열증착 시킨 후, $170^{\circ}C$에서 2시간 열처리하여 고분자화 된 막을 형성하였다. 다른 종류의 유기 패시베이션 막이 소자에 주는 영향을 비교 분석하기 위해, 450 nm 두께로 스핀코팅법을 이용하여 폴리비닐알콜 패시베이션 막을 형성하였다. 이 두 가지 패시베이션 막 형성법이 소자의 문턱전압과, 전하이동도에 주는 영향을 전기적 특성을 통해 변화를 확실히 볼 수 있었다. 최초 유기 박막 트렌지스터의 전기적 특성은 문턱전압, 점멸비, 그리고 정공의 이동도는 각각, -3 V, 약 $10^6$ 그리고, $0.24cm^2$/Vs 이 측정되었고. 폴리이미드를 사용하여 패시베이션 후 특성이 각각 0 V, 약 $10^6$ 그리고, $0.26cm^2/Vs$, 폴리비닐알콜 패시베이션 경우는 특성이 각각, 문턱전압의 경우 0 V에서 +2 V로, 점멸비는 $10^6$에서 $10^5$으로 전계효과이동도는 $0.13cm^2/Vs$ 에서 $0.13cm^2/Vs$로 변화하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.312-312
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• 2011

In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.