• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.4
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• pp.115-121
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• 2007

This paper describes experiments of the breakdown characteristics by temperature change of $SF_6$ gas and Imitation Air(I-Air) in model GIS(Gas Insulated Switchgear). From the results of the experiments, the breakdown characteristics classify the vapor stage of $SF_6$ according to Paschen's law, in which the stage of coexistence for gas & liquid of the voltage value increases. This results in large deviation and the breakdown of the voltage(VB) low stage as the interior of the chamber is filled with a mixture of $SF_6$ that is not liquefacted and remaining air that can not be ventilated. The ability of $SF_6$ liquid($LSF_6$) insulation is higher than high-pressurize $SF_6$ gas. The VB of the I-Air decreases as the temperature drops and the VB also drops. It is considered that the results of this paper are fundamental data for the electric insulation design of superconductor and cryogenic equipment that will be studied and developed in the future.

• Journal of ILASS-Korea
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• v.20 no.1
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• pp.43-52
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• 2015

Experimental study was conducted to investigate the effects of ultra-high injection pressure and nozzle hole diameter on diesel flow and spray characteristics. Electronically controlled ultra-high pressure fuel injection system was made to supply the fuel of ultra-high pressure consistently. Three injection pressures, 80, 160, and 250MPa were applied. Four type of injectors with identical eight nozzle holes were used. The four injectors have nozzle hole diameters of 115, 105, 95, and $85{\mu}m$ respectively. Injection quantity and rate were measured to investigate flow characteristics according to injection pressures and nozzle hole diameters. Mie-scattering and shadowgraph were performed to visualize liquid and vapor phases of diesel spray in a constant volume combustion chamber (CVCC). Ambient conditions of high pressure and high temperature in a diesel engine were simulated by using CVCC.

• Journal of Power System Engineering
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• v.9 no.4
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• pp.209-213
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• 2005

The effects of density change of ambient gas on mixture formation process have been investigated in high temperature and pressure field. To analyze the mixture formation process of evaporating diesel spray is important for emissions reduction in actual engines. Ambient gas density was selected as experimental parameter. The ambient gas density was changed from $r_a=5.0kg/m^3\;to\;r_a=12.3kg/m^3$ with a high pressure injection system(ECD-U2). For visualization of the experiment phenomenon, a CVC(Constant Volume Chamber) was used in this study. The ambient temperature and injection pressure are kept as 700K and 72MPa, respectively. The images of liquid and vapor phase in the evaporating free spray were simultaneously taken by exciplex fluorescence method. As experimental results, with increasing ambient gas density, the tip penetration of the evaporating free spray decreases due to the increase in the drag force from ambient gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.354-361
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• 2008

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.576-581
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• 1997

TDEAT(TI[N(C$_{2}$H$_{5}$)$_{2}$]$_{4}$)와 NH$_{3}$반응기체를 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition)TiN 박막을 형성하였다. 반응기체들은 chamber내에 주입하기 전에 적절한 기상반응을 유도시켜 주었으며, TiN박막 형성에 미치는 예비혼합 효과를 관찰하였다. 두 반응기체의 예비혼합을 이용하여 낮은 탄소의 함유와 함께 -800$\mu$Ωㆍcm의 비교적 낮은 비저항을 나타내었다. 또한 NH$_{3}$의 유량 증가에 따라 도포성이 상당히 증가되고 있는데 이같은 도포성 향상 효과는 기상반응에 의하여 형성되는 중간상의 낮은 흡\ulcorner계수에 기인하는 것으로 여겨진다. QMS(Quadruple Mass Spectrometer)분석을 이용하여 두가지 경쟁적 반응을 포함한 전체 반응식을 제시하였다. TDEAT/NH$_{3}$혼합증착원의 경우 particle이 관찰\ulcorner지 않았으며 이것은 기상반응의 정도를 효과적으로 조절한데 기인하는 것으로 여겨진다. 결과적으로 반응기체의 예비혼합은 막질 및 도포성 개선과 함께 particle생성억제에 매우 효율적인 방법임을 알 수 있었다.다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• Journal of Environmental Health Sciences
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• v.34 no.3
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• pp.219-225
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• 2008

Many building materials may contain high concentrations of volatile organic compounds (VOCs) and other hazardous pollutants(HAPs). Specifically, VOCs discharged by indoor building material may cause "new house" syndrome, atopic dermatitis etc. The diffusion coefficient and initially contained total VOC quantity were determined using microbalance experiments and small chamber tests. Interactions between volatile organic compounds (VOCs) and vinyl flooring (VF), a relatively homogenous, diffusion-controlled building material, were characterized. Rapid determination of the material/air partition coefficient (K) and the material-phase diffusion coefficient (D) for each VOC was achieved by placing thin VF slabs in a dynamic microbalance and subjecting them to controlled sorption/desorption cycles. K and D are shown to be independent of concentration for all of the VOCs and water vapor. This approach can be applied to other diffusion-controlled materials and should facilitate the prediction of their source/sink behavior using physically-based models.

• Journal of the Korean Solar Energy Society
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• v.21 no.1
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• pp.1-10
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the temperature$(T_w)$. The films deposited at high $T_w$ of $2000^{\circ}C$ have superior crystalline proper average lateral grain sizes are larger than $1{\mu}m$ and there are no vertical grain boundaries. The sur of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and text surface are believed to give high current density when applied to solar cells. However, the poly films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• Journal of Navigation and Port Research
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• v.31 no.10
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• pp.879-884
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• 2007

This study is to observe the change of temperature and relative humidity for various vegetables in vacuum precooling system. The materials for experiments were the lettuce, chinese cabbage, pak choi and cabbage. The experimental apparatus was constructed of vacuum chamber, vapor/water separator, water tank, pumps ejecting and cooling water circulation, refrigerator unit, cooling coil for water cooling, Hygrometer and Data logger measuring of the temperature change. The experiments were operated in 20torr and recorded every 3 minutes. It was found that the cooling temperature and speed of vegetables are depending on the percentage of its water content. The more water contains, the faster cooling speed and the lower cooling temperature.