• Journal of Environmental Health Sciences
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• v.35 no.6
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• pp.500-509
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• 2009

Passive samplers have been used for many years for the sampling of organic vapors in work environment atmospheres. Currently, all passive samplers used in domestic occupational monitoring are foreign products. This study was performed to evaluate variable parameters for the development of passive organic samplers, which include the geometry of the device and diffusive length for the sampler design. Four prototype diffusive lengths; A-1(4.5 mm), A-2(7.0 mm), A-3(9.5 mm), A-4(12.0 mm) were tested for adsorption performances to a chemical mixture (benzene, toluene, trichloroethylene, and n-hexane) according to the US-OSHA's evaluation protocol. A dynamic vapor exposure chamber developed and verified by related research was used for this study. The results of study are as follows. The results in terms of sampling rate and recommended sampling time test indicate that the most suitable model was A-3 (9.5 mm diffusive lengths on both sides) for passive sampler design in time weighted average (TWA) assessment. Sampling rates of this A-3 model were 45.8, 41.5, 41.4, and 40.3 ml/min for benzene, toluene, trichloroethylene, and n-hexane, respectively. The A-3 models were tested on reverse diffusion and conditions of low humidity air (35% RH) and low concentrations (0.2 times of TLV). These conditions had no affect on the diffusion capacity of samplers. In conclusion, the most suitable design parameters of passive sampler are: 1) Geometry and structure - 25 mm diameter and 490 $mm^2$ cross sectional area of diffusion face with cylindrical form of two-sided opposite diffusion direction; 2) Diffusive length - 9.5 mm in both faces; 3) Amount of adsorbent - 300 mg of coconut shell charcoal; 4) Wind screen - using nylon net filters (11 ${\mu}m$ pore size).

• Tribology and Lubricants
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• v.32 no.6
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• pp.183-188
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• 2016

Engine oil plays an important role in the mechanical lubrication and cooling of a vehicle engine. Recently, engine development has focused on the adoption of gasoline direct injection (GDI) and turbocharging methodology to achieve high-power and high-speed performance. However, oil dilution is a problem for GDI engines. Oil dilution occurs owing to high-pressure fuel injection into the combustion chamber when the engine is cold. The chemical components of engine oil are currently developed to accommodate gasoline fuel; however, bio-alcohol mixtures have become a recent trend in fuel development. Bio-alcohol fuels are alternatives to fossil fuels that can reduce vehicle emissions levels and greenhouse gas pollution. Therefore, the chemical components of engine oil should be improved to accommodate bio-alcohol fuels. This study employs a 2.0 L turbo-gas direct injection (T-GDI) engine in an experiment that dilutes oil with fuel. The experiment utilizes a variety of fuels, including sub-octane gasoline fuel (E0) and a bio-alcohol fuel mixture (Ethanol E3~E7). The results show that the lowest amount of oil dilution occurs when using E3 fuel. Analyzing the diluted engine oil by measuring density and moisture with respect to kinematic viscosity shows that the lowest values of these parameters occur when testing E3 fuel. The reason is confirmed to influence the vapor pressure of the low concentration bio-alcohol-fuel mixture.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.94-103
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• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.92-99
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• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.236-240
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we demonstrated the phase stability of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The ${\beta}$-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous ${\beta}$-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.111-117
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• 1995

TiO2 thin films were prepared on a (100)silicon wafer using a chemical vapor deposition(CVD) method. The deposition experiments were performed using the TTIP in the deposition temperature ransing from 200 content. The deposition rate of TiO2 was increased with the substrate temperature and the oxygen content. The thickness of the deposited thin film and the compositional analysis of this thin films with theoxygen content were measured using Ellipsometry, SEM and ESCA, respectively. The deposited thin film was composed of a bilayer, external TiO2 and internal Ti. Carbon as a residual impurity was found to remain when zero sccm O2 was purged into a reaction chamber and the composition of the deposited thin film was found to change Ti into TiO in a deeper layer. However, when 600sccm O2 was supplied to a reaction chamber, it has been found to reside less carbon content than without O2. Finally, in the condition of 1200sccm O2, no impurity level of carbon was observed and a deeper layer consisted of the Ti composite, even though the deposited surface was composed of TiO2.