• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.611-615
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• 2003

In this paper, a operation characteristics and analysis of the HB(half bridge) inverter for remote plasma system are studied. the remote plasma system is cleaning system for the chemical vapor deposition (CVD) chamber in semiconductor processing. The remote plasma system is powered by the RF generator The main power stage of the RF generator is used for the HB PWM inverter with an low pass filter in the secondary circuit of the transformer. The detailed mode analysis of HB invertor was described. The operation characteristics of Remote Plasma Source are verified by simulation and experimental results.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.689-691
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• 2002

Well-aligned multi-wall carbon nanotubes (MWCNTs) have been grown on both Coming glass and silicon substrates at about 400 $^{\circ}C$ by a modified plasma - enhanced chemical vapor deposition system. We have investigated laser irradiation effect on carbon nanotube surface by using an ultra - violet laser. The laser operated to modify structural defect of was carbon nanotube and to ablate possible contamination of carbon nanotube surface. The morphology and surface transformation of MWCNTs as analyzed by a SEM. In addition, the field emission measurement was also carried out in a vacuum chamber with a $10^{-7}$ Torr base pressure by applying bias voltages up to 1000V.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.803-808
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• 1996

Material and electrical characteristies of copper thin films prepared by metal organic chemical vapor deposition (MOCVD) have been investigated for interconnection applications in ultra large scale integration circuits (ULSI). The copper films have been deposited a TiN substrates using a metal organic precursor, hexafluoro acetylacetonate trimethyvinylsilane copper, VTMS(hfac)Cu (I). Deposition rate, grain size, surface morphology, and electrical resistvity of the copper films have been measuredfrom samples prepared at various experimental conditions, which include substrate temperature, chamber pressure, and carrier gas flow rate. Results of the experiment showed that the electrical property of the copper films is closely related to the crystallinity of the films. Lowest electrical resistivity, $2.4{\mu}{\Omega}.cm$ was obtained at the substrate temperature of $180^{\circ}C$, but the resistivity slightly increased with increasing substrate temperature due to the carbon content along the copper grain boundaries.

• The Journal of the Korean dental association
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• v.11 no.3
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• pp.185-189
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• 1973

Dental amalgam in the clinic practice of dentistry is one of the most important materials. Mercury, one of the component of this alloy, is emitted in the form of vapor after filling as long as 5 days Silver particles penetrate into the dentine deeply along the tubles underneath cavity floor. To determine the permeability of mercury in the teeth following experiments were performed. Class 5 cavities total 40 from 10 dogs were prepared on upper and lower canines and amalgam alloys which contain about 10uCi of radioactive mercury were inserted. The animals were sacrificed 7 days after the experiments and the teeth were decalcified, sectioned and autoradiographed by means of emulsion and stained by H & E. Following are the results obtained from this experiments. 1. Blackened silver grains were found along the dentinal tubules underneath the cavity floor. Beyond the border of dentine and pulp chamber grains were seen in odontoblastic layer (Fig. 1, 2, 3, 4) 2. Underneath the odontoblastic layer, the pulp tissue showed almost normal appearance except slight dilatation of blood vessel.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.217-223
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• 1995

In this paper, we investigated physical properties and electrical characteristics of the fluorocarbon that used as coolants for large power gas-insulated transformer. Volume resistivity of the fluorocarbon was .rho.=1.87*10$^{15}$ [.ohm.cm] at 1 atm, 27.deg. C. Dielectric constant was 1.86 and decreases as temperature increase. The breakdown voltage at 1 atm was higher than that of transformer oil. The breakdown voltage of fluorocarbon vapor was about 18kV when pressure in a test chamber increases over lkg/cm$^{2}$. When fluorocarbon was mixed with SF$_{6}$ gas, breakdown voltage of the mixed was higher than that of fluorocarbon. Then fluorocarbon leads to increase over 4kg/cm$^{2}$ in pressure as temperature increase. Therefore, when a gas-insulated transformer is manufactured, the design must be taken into consideration a high-pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.11-18
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• 2003

In this study we attempted to diagnose the states and properties of plasma generated while depositing SiON thin films using PECVD (Plasma enhanced chemical vapor deposition). The temperature and density of electron gases formed in a PECVD chamber were measured by Langmuir probe method. Their values were also estimated under some assumptions we made in this work. Comparison between experimental and theoretical values of the temperature and density of electron gases was made. The experimental and estimated results revealed that, as RF Power gets higher, the electron density linearly increases, but that the electron temperature does not vary.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• Corrosion Science and Technology
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• v.4 no.1
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• pp.33-38
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• 2005

Some feasibility studies are conducted to produce an advanced ceramic coating, which reveals superior chemical and mechanical strength, on metal base structure used in chemical plant. This advanced coating on metallic frame can replace ceramic delivery pipe and reaction chamber used in chemical plant, which are operated in hi-temperature and corrosive/erosive environment. An dual spraying is adopted to reduce the residual stress in order to increase the coating thickness and the residual stress is estimated by in-situ manner. Then new methodology is tried to form special coating of yttrium aluminum garnet(YAG), which reveals hi-strength and low-creep rates at hi-temperature, superior anti-corrosion property, hi-stability against Alkali-Vapor corrosion, and so on, on iron base structure. To verify the formation of YAG during thermal spraying, XRD(X ray diffraction) technique was used.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.12 no.10
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• pp.925-931
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• 2000

Refrigerating ability of vapor compression refrigerator is decided by the harmonic work of it's components such as compressor, condenser, evaporator, expansion device, and so on. In this study, choosing refrigerant injectors as a new one of expansion device, temperature change of the cold room, ice freezing ability, and power consumption on flowrate of injector and refrigerant charging condition are evaluated experimentally. As the results of this study, it is verified that the spray injection type refrigeration system has some merits according to the flowrate and spray pattern of injector and charging quantum of refrigerant. And there are some design factors such as spray pattern and shape of spray chamber to utilize and fabricate this refrigerant injection type refrigerator.