• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.699-705
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• 1986

Sb2S3 thin films were fabricated by vacuum evaporation of compound Sb2S3 at a pressure of 10**-5 torr. and in argon ambient. Then, their electrical and photoconductive properties were investigated. The Sb2S3 glass-layer showed maximum photosensitivity at the deposition rate of 250\ulcornersec, and Sb2S3 porous layer had mininum dielectric constant of 1.5 at the deposition rate of 0.3 um/sec and argon partial pressure of 0.2torr. Sb2S3 multi-layers were prepared at the different thickness ratio (B/A) to find the proper structural property suited for camera pick-up tube. Here, A is the sum of the thickness of Sb2S3 porous layer and Sb2S3 fine grain layer, and B is the thickness of Sb2S3 fine grain layer. As a result, photosensitivity had a peak value at the thickness ratio (B/A) of 60%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.122-126
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• 2017

The aim of this study was to develop a device for solving the heating problem of living space using heated air, utilizing a simple air heater type collector for solar energy. At the present time, this study assessed the possibility of a development system through theoretical calculations for the amount of available energy according to the size change of the air-heated solar energy collector. To produce and supply hot water using the heat energy of the sun, hot water at $100^{\circ}C$ or less was produced using a flat or vacuum tube type collector. The purpose of this study was to research the air heating type solar collector that utilizes heating energy with heating air above $75^{\circ}C$, by designing and manufacturing an air piping type solar collector that is a simpler type than a conventional solar collector system. The analysis results were obtained for the generated air temperature ($^{\circ}C$) and the production of air (kg/h) to determine the performance of air heating by an air-heated solar collector according to the heat transfer characteristics in the collector of the model when a specified amount of heat flux was dropped into a solar collector of a certain size using PHOENICS, which is a heat flow analysis program applying the Finite Volume Method. From the analysis result, the temperature of the air obtained was approximately $40.5^{\circ}C$, which could be heated using an air heating tube with an inner diameter of 0.1m made of aluminum in a collector with a size of $1.2m{\times}1.1m{\times}0.19m$. The production of air was approximately 161 m3/h. This device can be applied to maintain a suitable environment for human activity using the heat energy of the sun.

• Transactions of the Korean hydrogen and new energy society
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• v.9 no.4
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• pp.169-176
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• 1998

An experimental study on effect of vapor-cooled heat stations in a 5.5 liter cryogenic vessel has been performed. The cryogenic vessel is made of stainless steel of thickness of 1mm and insulated by the combined insulation of vacuum, MLI(multi-layer insulation) and vapor-cooled radiation shield. Vapor-cooled heat stations are also constructed based on the 1-dimensional thermal analysis to reduce the heat inleak through a filling tube. Thermal analysis indicates that the vapor-cooled heat stations can substantially enhance the performance of vessel for cryogenic fluids with high $C_p/h_{fg}$ where $C_p$ the specific heat and $h_{fg}$ the heat of vaporization, such as $LH_2$ and LHe. The experimental results for $LN_2$ shows that the total heat inleak into inner vessel consists of 14% radiation and 86% conduction through the filling tube. Therefore, it is expected that the conduction heat in leak of the vessel for high $C_p/h_{fg}$ cryogenic fluids can be significantly reduced. powders. The amount of copper coating was 20wt%. In order to examine corrosion behavior of the electrodes, the corrosion current and the current density, in 6M KOH aqueous solution after removal of oxygen in the solution, were measured by potentiodynamic and cyclic voltamo methods. The results showed that Co in the alloy increased corrosion resistance of the electrode whereas Ni decreased the stability of the electrode during the charge-discharge cycles. The electrode used Si sealant as a binder showed a lower corrosion current density than the electrode used PTFE and the electrode used Cu-coated alloy powders showed the best corrosion resistance.

• Archives of Plastic Surgery
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• v.37 no.3
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• pp.227-232
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• 2010

Purpose: Continuous irrigation method is an important step in managing wound infection. V.A.C. devices have been used in intractable wounds for reducing discharge, improving local blood flow, and promoting healthy granulation tissue. We expect synergistic effects of reduced infection and more satisfactory, accelerated wound healing when using both methods simultaneously. This study evaluated continuous irrigation combined with V.A.C. appliance for treatment of infected chronic wounds. Methods: We reviewed data from 17 patients with infected intractable chronic wounds. V.A.C. device (Group A) was used in 9 patients, and V.A.C. with antibiotics irrigation (Group B) was used in 8 patients. We placed Mepitel$^{(R)}$ on the surface of wound and placed an irrigation and aspiration tube on each side. A sponge was placed on the Mepitel$^{(R)}$ and covered with film dressing. The wound was irrigated continuously with mixed antibiotics solution at the speed of 200 cc/hr and aspirated through the wall suction at the pressure of -125 mmHg. V.A.C. applied time, wound culture and wound size were compared between the two groups. Results: No complication were seen in two groups. Compared with Group A, in the Group B, V.A.C. applied time was shortened from 32.7 days to 25.6 days and showed efficacy in the reduction rate of wound size. No statistical differences were shown in bacterial reversion. Conclusion: V.A.C. appliance with continuous irrigation is an effective new method of managing infected chronic wounds and useful to reduce treatment duration and decrease wound size. Moreover it could be applied more widely to infected wound.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.172-180
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• 2007

A new diagnostics of plasma electron temperature and plasma density is introduced with the observation of the light emission along the tube of external electrode fluorescent lamps. With two different methods operating an external electrode fluorescent lamp of outer diameter 4.0 mm and length 860 mm for the back-light source of 37-inch LCD-TVs, the lighting modes and the plasma properties are investigated. In the center balance operation, the light-emission propagates simultaneously from both sides of the high voltage electrodes to the center of the lamp, while in conventional operation the light-emission propagates from the one end of a high voltage to the other ground electrode. In the operation value of luminance $10,000{\sim}15,000cd/m^2$, the electron plasma thermal energy $(kT_e)$ is about $1.3{\sim}2.7eV$ with the electron density $(n_e)$ is about $(1.6{\sim}3.6){\times}10^{16}m^{-3}$.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.495-500
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• 2008

The amount of vapor mercury for the generation of glow discharge plasma has been calculated in a fine tube fluorescent lamp having a mixed gas of Ne+Ar including a mercury. When the ionization of atom is considered by the collision between neutral atoms (Ne, Ar, Hg) and electrons of energy $kT_e{\sim}1\;eV$, the density of vapor mercury atom has been obtained as $n(Hg){\sim}3.43{\times}10^{22}m^{-3}$ for the plasma density $n_o{\sim}10^{17}m^{-3}$. In the fluorescent lamps of out diameter 4 mm used for $32{\sim}42$-inch LCD-TVs having a mixture gas of Ne(95%)+Ar(5%) with the pressure of 50 Torr, the quantity of vapor mercury for the glow discharge has been caculated as 0.02{\sim}0.08\;mg$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.90-94
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• 2023

Carbon fiber(CF) with excellent thermal conductivity and electrical conductivity is attracting attention as an alternative material because metal heating elements have problems such as high heat loss and fire risk. However, since CF is oxidized and disconnected at about 200℃ or higher, the application of heating elements is limited, and CF heating elements in the form of vacuum tubes are currently used in some commercial heaters. In this work, polyimide(PI) with high heat resistance was coated on the surface of carbon fiber by electrophoretic deposition to prevent oxidation of CF in the atmosphere without using a vacuum tube, and the coating thickness and heat resistance were investigated according to the applied voltage. The heater made by connecting the PI-coated CF heating elements in series showed stable heating characteristics up to 292℃, which was similar to the heating temperature result of the heat transfer simulation. The PI layer coated by the electrophoretic deposition method is effective in preventing oxidation of CF at 200℃ or higher and is expected to be applicable to various heating components such as secondary batteries, aerospace, and electric vehicles that require heat stability.

• Resources Recycling
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• v.26 no.6
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• pp.29-37
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• 2017

Nuclear fuel cladding tube is fabricated by pilgering and annealing process. In order to remove impurity and oxygen layer on the surface, pickling process is carried out. When Zirconium(Zr) is dissolved and saturated in acid solution during the pickling process, all the waste acid including Zr is disposed. Therefore, $BaF_2$ is added into the waste acid to extract Zr and $Ba_2ZrF_8$ is subsequently formed. To recycle Zr by electrowinning process, $Ba_2ZrF_8$ is used as electrolyte, but it has high melting point ($1053^{\circ}C$). $ZrF_4$ should be added into $Ba_2ZrF_8$ to decrease the melting point. In this paper, it was investigated that $Ba_2ZrF_8$ was separated to $BaF_2$ and $ZrF_4$ by vacuum distillation. Firstly, $BaF_2$ with different particle size ($1{\mu}m$, $35{\mu}m$, $110{\mu}m$) was added into the waste acid and the respective precipitation property was estimated. $BaF_2$ obtained by vacuum distillation was shattered by ball-milling with different time. The precipitation efficiency was compared with $1{\mu}m$ of ${BaF_2}^{\prime}s$ one, which was not used as precipitation agent.

• Journal of the Korean Society of Combustion
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• v.7 no.4
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• pp.36-44
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• 2002

Carbon molecules with closed-cage structures are called fullerenes $(C_{60},\;C_{70})$, whose applications include super-conductors, sensors, catalysts, optical and electronic device, polymer composites, and biological and medical materials. The synthesis of fullerenes has been recently studied with low-pressure benzene/argon/oxygen flames. The formation of fullerene is known as molecular weight growth processes of PAHs (polycyclic aromatic hydrocarbon). This study presents results of PAHs and fullerene measurements performed in a low-pressure benzene/argon/oxygen normal co-flow laminar diffusion flame. Through the central tube of the burner, benzene vapors carried by argon are injected. The benzene vapors are made in a temperature-controlled bubbler. The burner is located in a chamber, equipped with a sampling system for direct collection of condensable species from the flame, and exhausted to a vacuum pump. Samples of the condensable are analyzed by HPLC (High Performance Liquid Chromatography) to determine the yields of PAHs and fullerene. Also, we computed mole fraction of fullerene and PAHs in a nearly sooting low pressure premixed, one-dimensional benzene/argon/oxygen flame (equivalence ratio ${\Phi}=2.4$, pressure=5.33kPa). The object of computation was to investigate the formation mechanism of fullerenes and PAHs. The computations were performed with CHEMKIN/PREMIX. As a result of this study, fullerenes were synthesized in a low pressure (20torr) $C_6H_6/Ar/O_2$ flames and the highest concentration of fullerene was detected just above the visible surface of a flame.