• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.196-197
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• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.140-148
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• 1998

We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.267-272
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• 2000

Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at $450^{\circ}C$ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to $450^{\circ}C$, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.2
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• pp.200-205
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• 2010

Heat-resistance of W/$Y_2O_3$ as throat insert material was evaluated to develop rocket motor keeping thrust uniformly under condition of high-temperature, high-pressure and long-burn time. Test was conducted with varying burn time, and test results were compared with CIT. Test showed that ablation rate was decreased according as burn time was increased, and that ablation rate of W/$Y_2O_3$ was about 55 % of CIT. Macro/micro structures of throat insert did not show a peculiar phenomenon by increased burn time. In addition, the vacuum heat treatment is effective for the prevention of crack in throat insert.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

• Journal of Korea Foundry Society
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• v.23 no.4
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• pp.204-211
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• 2003

Ti-3wt.%Nb(${\alpha}$type), Ti-20wt.%Nb(${\alpha}+{\beta}$,type) and Ti-40wt.%Nb(${\beta}$type) alloys were melted by vacuum are remelting. The specimens were homogenized at 1050$^{\circ}C$ for 24 hr and were then hot rolled to 50% reduction. Each alloys were solution heat treated at ${\beta}$ zone and ${\alpha}+{\beta}$, zone after homogenization, and then aged. The microstructural and hardness changes in Ti-Nb alloys with Nb contents were investigated by SEM, XRD and hardness tester. The microstructural change from equiaxied to acicular and the increase of ${\beta}$ phase in Ti-Nb alloys were obtained when the Nb content increased. The higher hardness value of ${\alpha}+{\beta}$type alloy was obtained compared to the other alloys.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.516-521
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• 2016

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile, and many other applications due to their excellent physical and electric properties. Especially, Mo-Cu composites with 5 ~ 20 wt.% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength, and prominent electrical and thermal conductivity. In most of the applications, highly-dense Mo-Cu materials with homogeneous microstructure are required for better performance. In this study, Mo-Cu alloys were prepared by PBM (planetary ball milling) and SPS (spark plasma sintering). The effect of Cu with contents of 5~20 wt.% on the microstructure and thermal properties of Mo-Cu alloys was investigated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.11
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• pp.1600-1604
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• 2017

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile and many other applications due to their excellent physical and electronic properties. Especially, Mo-Cu composites with 5~20 wt% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength and prominent electrical and thermal conductivity. In most of the applications, high dense Mo-Cu materials with homogeneous microstructure are required for high performance, which has led in turn to attempts to prepare ultra-fine and well-dispersed Mo-Cu powders in different ways, such as spray drying and reduction process, electroless plating technique, mechanical alloying process and gelatification-reduction process. However, most of these methods were accomplished at high temperature (typically degree), resulting in undesirable growth of large Cu phases; furthermore, these methods usually require complicated experimental facilities and procedure. In this study, Mo-Cu alloying were prepared by planetary ball milling (PBM) and spark plasma sintering (SPS) and the effect of Cu with contents of 5~20 wt% on the microstructure and properties of Mo-Cu alloy has been investigated.

• Design & Manufacturing
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• v.10 no.2
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• pp.44-49
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• 2016

The roll forming produces mass products using the continuous production process. Also we need the process that continuous long material or goods cutting into a desired length. Our study uses 3-D driving cutter and roll forming material as SPCC to investigate this. When we cut the material using the process of roll forming, the shear resistance is raised at the cutting punch's edge. The result is remained the trouble about burr and progressive deformation on the material. This study shows the method minimizing the above trouble. The material of punch was considering heat generated on the continuous production process. So we used the type of STD 61 for the material of punch and had the vacuum heat treatment for the surface hardness of HRC 53. The structure of the mold is designed with forming a double cam die at the upper punch and the both sides of central core. We conducted the experiment three times. In the result when had to make V-groove within the angle between 105 and 110 on the punch front end, we could get the minimum shear resistance on the punch front end. Also with the same condition we minimizes the material jams in the continuous production process.