• 제목/요약/키워드: vacuum deposition

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High rate deposition and mechanical properties of SiOx film on PET and PC polymers by PECVD with the dual frequencies UHF and HF at low temperature

  • Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.180-180
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    • 2010
  • The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

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The performance of large-area organic solar cells by spray deposition process

  • 박선영;박동석;김도근;김종국;김주현;강재욱
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.291-291
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    • 2010
  • Organic solar cells have attracted much interest due to the potential advantage of the lightness, simple solution processing and flexibility. Until recently, the focus of organic solar cells research has been on optimization of material processing to improve the power conversion efficiency. However, area scaling is an important position for alternative to the market dominating solar cells. Spray deposition technologies have advantage of less material wastage and possibility of large scale photoactive area coating when compared with spin coating process. We investigated the performance of organic solar cells as a function of active area using two types of deposition process. The commonly used process is spin coating which can be fabricated organic materials deposition for devices. Spray deposition process compare with spin coating for large-area organic solar cells. The spray deposition organic layer shows excellent performance up to the active area of $4\;cm^2$ with the PCE of ~3.0 % under AM.1.5 simulated illumination with an intensity of $100mW/cm^2$. This indicates that the spray deposition process can be used as a mass production process for evaluating large-area organic solar cells.

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New SMOLED Deposition System for Mass Production

  • Lee, J.H.;Kim, C.W.;Choi, D.K.;Kim, D.S.;Bae, K.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.407-410
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    • 2003
  • We will introduce our new concept deposition system for SMOLED manufacturing in this conference. This system is designed to deposit organic and metal material to downward to overcome the limit of substrate size and process tact time hurdle for OLED mass production, and is organized with organic deposition chamber, substrate pre-cleaning chamber, metal deposition chamber and encapsulation system. These entire process chambers are integrated with linear type substrate transfer system. We also compare our new SMOLED manufacturing system with conventional vacuum deposition systems, and show basic organic thin film property data, organic material deposition property data, and basic device property.

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ECR-PECVD 장치의 제작과 특성 (Manufacturing and characterization of ECR-PECVD system)

  • 손영호;정우철;정재인;박노길;황도원;김인수;배인호
    • 한국진공학회지
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    • 제9권1호
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    • pp.7-15
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    • 2000
  • An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

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Correlation between Charged Silicon Nanoparticles in the Gas Phase and the Low Temperature Deposition of Crystalline Silicon Films during Hot Wire Chemical Vapor Deposition

  • 유승완;홍주섭;김정형;유신재;황농문
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.283.2-283.2
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    • 2014
  • 열필라멘트 화학증착공정(Hot Wire Chemical Vapor Deposition)에서 기상 에서 생성되는 하전된 실리콘 나노입자와 저온결정성 실리콘박막 증착의 연관성을 압력의 변화에 따른 상호비교를 통해 조사하였다. 필라멘트 온도는 $1800^{\circ}C$로 고정시키고 0.3~2 torr의 범위에서 공정 압력을 변화시키면서 증착하였다. 압력이 증가함에 따라 증착된 실리콘 박막의 결정화도는 증가하였으며, 증착속도는 감소하였다. 반응기 압력에 따른 기상에서 생성되는 나노입자의 크기분포의 변화를 조사하기 위하여 탄소막이 코팅된 투과전자현미경(Transmission Electron Microscopy) 그리드 위에 실리콘 나노입자를 포획하고 관찰하였다. 포획된 실리콘 나노입자의 크기분포와 개수농도는 압력이 증가함에 따라 감소하였다. 투과전자현미경을 이용하여 분석한 결과, 나노입자는 결정성 구조를 보였다. 압력이 증가함에 따라 나노입자의 크기가 감소하고 개수농도가 감소하는 것은 증착속도의 감소와 관련됨을 알 수 있다. 한편, 공정압력 증가에 따른 나노입자의 크기분포 및 개수농도 감소와 증착속도의 감소는 일반적으로 알려진 기상에서 석출하는 고상의 평형석출량(equilibrium amount of precipitation)이 압력의 증가함에 따라 증가한다는 사실과 일치하지 않는다. 이러한 압력경향성은 Si-H 시스템이 0.3~2 torr의 압력 영역에서 retrograde solubility를 갖는 것을 의미한다. 나노입자의 하전여부, 크기분포 및 개수농도를 측정하기 위하여 입자빔질량분석장비(Particle Beam Mass Spectroscopy)를 이용하였다. 그 결과, 실리콘 나노입자는 양 또는 음의 극성을 가진 하전된 상태임을 확인하였고, 투과전자현미경(TEM) grid에 포획한 실리콘 나노입자의 크기와 경향성이 일치하였다. 이는 나노입자가 저온의 기판에서 핵생성되어 성장하여 생성된 것이 아니라 열필라멘트 주위의 고온영역에서 생성된 것을 의미한다.

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The Effects of Thermal Decomposition of Tetrakis-ethylmethylaminohafnium (TEMAHf) Precursors on HfO2 Film Growth using Atomic Layer Deposition

  • Oh, Nam Khen;Kim, Jin-Tae;Ahn, Jong-Ki;Kang, Goru;Kim, So Yeon;Yun, Ju-Young
    • Applied Science and Convergence Technology
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    • 제25권3호
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    • pp.56-60
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    • 2016
  • The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of $HfO_2$ thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of $135^{\circ}C-350^{\circ}C$. At temperatures higher than $300^{\circ}C$, there was a rapid decrease in the absorption peaks arising from vibration of $Sp^3$ C-H stretching. This showed that the precursors experienced rapid decomposition at around $275^{\circ}C-300^{\circ}C$. $HfO_2$ thin films were successfully deposited by Atomic Layer Deposition (ALD) at $50^{\circ}C$ intervals between $150^{\circ}C$ to $400^{\circ}C$; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.

Fabrication of Organic-Inorganic Superlattice Films Toward Potential Use For Gas Diffusion Barrier

  • 윤관혁;;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.394-394
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    • 2012
  • We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

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Formation of a Carbon Interphase Layer on SiC Fibers Using Electrophoretic Deposition and Infiltration Methods

  • Fitriani, Pipit;Sharma, Amit Siddharth;Lee, Sungho;Yoon, Dang-Hyok
    • 한국세라믹학회지
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    • 제52권4호
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    • pp.284-289
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    • 2015
  • This study examined carbon layer coating on silicon carbide (SiC) fibers by utilizing solid-state and wet chemistry routes to confer toughness to the fiber-reinforced ceramic matrix composites, as an alternative to the conventional pyrolytic carbon (PyC) interphase layer. Electrophoretic deposition (EPD) of carbon black nanoparticles using both AC and DC current sources, and the vacuum infiltration of phenolic resin followed by pyrolysis were tested. Because of the use of a liquid phase, the vacuum infiltration resulted in more uniform and denser carbon coating than the EPD routes with solid carbon black particles. Thereafter, vacuum infiltration with controlled variation in phenolic resin concentration, as well as the iterations of infiltration steps, was improvised to produce a homogeneous carbon coating having a thickness of several hundred nanometers on the SiC fiber. Conclusively, it was demonstrated that the carbon coating on the SiC fiber could be achieved using a simpler method than the conventional chemical vapor deposition technique.