• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.139-139
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.129-129
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.194-194
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.139-139
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.177-177
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.134-134
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• 2012

We investigated the interface of poly (3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) by using photoelectron spectroscopy (PES). These are the most widely used materials for bulk heterojunction (BHJ) organic solar cells due to their high efficiency. Study of the BHJ interfaces is difficult because the organic films are typically prepared by spin coating in ambient conditions. This is incompatible with the interface electronic structure probes such as PES, which requires ultrahigh vacuum conditions. Study of interface requires gradual deposition of thin films that is also incompatible with the spin coating process. In this work, we used electrospray vacuum deposition (EVD) technique to deposit P3HT and PCBM in high vacuum conditions. EVD allows us to form polymer thin films onto ITO substrate in a step-wise manner directly from solutions and to use PES without exposing the sample to the ambient condition. Although the morphology of the EVD deposited P3HT films observed by optical and atomic force microscopes is quite different from that of the spin coated ones, the valence region spectra were similar. PCBM was deposited on the P3HT film in a similar manner and the energy level alignment between these two materials was studied. We discuss the relation between Voc of P3HT:PCBM solar cell and HOMO-LUMO energy offset obtained in this study.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.45-50
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• 2013

This paper focuses on the fundamental issues for improving the efficiency and throughput of the AC PDP (Plasma Display Panel) manufacturing. The properties of the MgO protective layer affect the PDP efficiency. Especially, the secondary electron emission efficiency was affected on the deposition rate of MgO during the evaporation. In this study, the deposition rate of 5 $\AA$/s has given the maximum efficiency value of 0.05 It is demonstrated that the impurity gases such as $H_2O$, $CO_2$, CO or $N_2$, and $O_2$ can be remained inside the PDP panel before sealing and the amount of the impurity gases decreased rapidly as the base vacuum level increased, especially near $10^{-5}$ torr. The fundamental solution in order to overcome these problems is the vacuum in-line sealing process from the MgO evaporation to the final sealing of the panel without breaking the vacuum. We have demonstrated this fundamental process technology and shown the feasibility. The firing voltage was reduced down to 285 V at the base vacuum value of $10^{-6}$ torr, whreras it was about 328 V at the base vacuum value of $10^{-3}$ torr.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.184-188
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• 2017

Polymer deposition pattern on the ceramic lid surface is analyzed by numerical modeling. Assumption was made that is affected by gas flow pattern from the horizontal and vertical nozzles, temperature profile from the finger-like branches made of graphite and electrostatic potential effect. Calculated results showed gas flow dynamics is less relevant than two others. Temperature and electrostatic effects are likely determining the polymer deposition pattern based on our numerical simulation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.270-270
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• 2016

We fabricated an organic-inorganic nano laminated encapsulation layer using molecular layer deposition (MLD) combined with atomic layer deposition (ALD). The $Al_2O_3$ inorganic layers as an effective single encapsulation layer were deposited at 80 degree C using ALD with alternating surface-saturation reactions of TMA and $H_2O$. A self-assembled organic layers (SAOLs) were fabricated at the same temperature using MLD. MLD and ALD deposition process were performed in the same reaction chamber. The prepared SAOL-$Al_2O_3$ organic-inorganic nano laminate films exhibited good mechanical stability and excellent encapsulation property. The measurement of water vapor transmission rate (WVTR) was performed with Ca test. We controlled thickness-ratio of organic and inorganic layer, and specific ratio showed a lowest WVTR value. Also this encapsulation layer contained very few pin-holes or defects which were linked in whole area by defect test. To apply into real OLEDs panels, we controlled a film stress from tensile to compressive and flexibility defined as an elastic modulus with organic-inorganic ratio. It has shown that OLEDs panel encapsulated with nano laminate layer exhibits better properties than single layer encapsulated in acceleration conditions. These results indicate that the organic-inorganic nano laminate thin films have high potential for flexible display applications.