• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.340-340
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• 2016

We have prepared alumina (Al2O3) doped zinc oxide (AZO) films by DC magnetron sputtering (MS) technique and obtained higher self surface texturing at a high target angle (f). We have characterized the films and applied it as a front electrode of a single junction amorphous silicon solar cell. At a lower f the deposited films show higher values of optical gap (Eg), charge carriers mobility & concentration, crystallite grain size and wider wavelength range of transmission. At higher target angle the sheet resistance, surface roughness, haze factor etc for the films increase. For f=72.5o the haze factor for diffused transmission becomes 6.46% at 540 nm wavelength. At f=72.5o the material shows a reduction in crystallinity and evolution of a hemispherical-type sub-micron surface textures. A Monte Carlo method (MCM) of simulation of the AZO film deposition shows that such an enhanced self-surface texturing of the films at higher f is possible.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.2-293.2
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• 2016

The In this paper, we have fabricated the solution processed In-Ga-ZnO thin film transistors (IGZO TFTs) by varying indium and gallium ratio. The indium ratio of IGZO TFTs was changed from 1 to 5 at fixed gallium and zinc oxide atomic percent of 1:1 and gallium ratio was varied from 1 to 5 at fixed indium and zinc oxide atomic percent of 1:1. When the indium ratio was increased at fixed gallium and zinc oxide ratio of 1:1, threshold voltage was negatively shifted from 1.03 to -6.18 V and also mobility was increased from 0.018 to $0.076cm2/V{\cdot}sec$. It means that the number of carriers in IGZO TFTs were increased due to great formation of the oxygen vacancies which generate electrons. In contrast, when the gallium ratio was increased in IGZO TFTs with indium and zinc oxide ration of 1:1, the on/off current ratio was increased from $1.88{\times}104$ to $2.22{\times}105$. It is because gallium have stronger chemical bonds with oxygen than that with the zinc and indium ions that lead to the decreased in electron concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.194.2-194.2
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• 2016

저주파 (수십 kHz)와 고주파 (13.56 MHz)로 구동되는 대기압 플라즈마 젯을 발생시키고, 인가전압 (혹은 인가전력)과 기체 유량에 따른 대기압 플라즈마의 특성을 비교하였다. 고주파에서 발생된 플라즈마는 저주파의 경우보다 안정적이었으며, 인가전압 (혹은 인가전력)이 증가함에 따라 플라즈마 기체온도는 상승하였고, 고주파 젯의 기체온도는 저주파 젯 보다 높았으나 330 K이하인 것을 확인하였다. Optical Emission Spectroscopy (OES)를 이용하여 저주파와 고주파의 광 방출 특성을 측정하였다. 저주파에서는 $N_2{^+}$ (391.4 nm)의 intensity 증가가 두드러지게 나타났지만 고주파 젯에서는 $N_2$, $N_2{^+}$의 intensity는 감소하였으며, OH, NO, $H_{\alpha}$, O와 같은 활성 산소 종 (Reactive Oxygen Species)이 저주파 젯 보다 높게 측정되었다. Boltzmann plot method를 이용한 분석을 통해 저주파와 고주파 영역에서의 플라즈마 전자 여기 온도를 측정하였다. 또한 자외선 흡수분광법을 이용하여 플라즈마-액체 계면에서의 OH이 입자밀도를 측정하여 OES방법으로 측정한 OH 밀도와 비교하였다. 그리고 화학적 측정법 (terephtalic acid solution)을 이용하여 액체 내의 OH의 농도를 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.184.1-184.1
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• 2015

RF magnetron sputtering법을 이용하여 IGZO박막을 RF power 100W로 일정하게 유지시켜, 열처리 변화에 따른 구조적, 전기적, 광학적 특성 분석을 연구하였다. IGZO 타겟은 $In_2$ $O_3$, $Ga_2$ $O_3$, ZnO 분말을 각각 1:1:2 mol% 조성비로 혼합하여 소결한 타겟을 사용하였고, $20mm{\times}20mm$ XG glass 기판위에 IGZO박막을 증착하였다. sputtering의 조건은 base pressure $2.0{\times}$10^-6Torr, working pressure $2.0{\times}$10^-2Torr, RF power 100 W, 증착온도는 실온으로 고정, 증착된 박막은 Annealing장비로 $500^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$로 열처리를 하였다. XRD 분석 결과 열처리 $700^{\circ}C$부터 2theta=31.4도에서 peak intensity가 증가하며 결정화가 진행되는 것을 확인하였다. AFM분석 결과 열처리 $700^{\circ}C$에서 최소 0.31 Roughness를 갖는 것을 확인하였고, Hall 측정 결과 열처리 $700^{\circ}C$에서 carrier concentration $4.91{\times}$10^19cm^-3, Mobility 14.4cm^2/V-s, Resistivity $8.7{\times}$10^-5${\Omega}-cm$로 확인하였으며, UV-Visible-NIR을 이용하여 열처리 한 모든 IGZO박막은 가시광선 영역에서 평균 85%이상의 광 투과성을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.29-33
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• 2004

In this paper, we investigated the ultra-low temperature(<$150^{\circ}C$) polycrystalline silicon film on plastic substrate application using RF-magnetron sputtering and excimer laser annealing. Amorphous silicon films were deposited using Ar/He mixture gas at $120^{\circ}C$ and in-film argon concentration was less than 2%, which was measured to Rutherford Backscattering Spectrometry. At energy density 320mJ/$\textrm{cm}^2$, RMS roughness was 267$\AA$ and UV crystallinity was 62%. The grain size varies from 50nm to 100nm after excimer laser irradiation.

• Journal of Plant Biotechnology
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• v.4 no.4
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• pp.171-178
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• 2002

Chlorophyll (Chl) fluorescence imaging was used to investigate the effectiveness of in vivo incorporation methods for two chemicals, 3-(3',4'-dichlorophenyl)-1,1-dimethylurea (DCMU) and methyl viologen (MV) in rice, a monocot, and cucumber, a dicot, leaves. four different methods (vacuum infiltration, floating, transpiration-aided incorporation through petiole and spraying) were compared, and $F_i$ and $F_v$/$F_m$ were chosen for the imaging of the DCMU- and MV-treated leaves, respectively. The effects of the chemicals in plants were generally heterogeneous over the whole leaf area. Moreover, the effectiveness of the treatment of a chemical in plant leaves was dependent on chemical species, plant species, concentration of the chemical, the treatment method, the duration of the treatment, the existence of light and detergent, etc. In conclusion, we suggest that to achieve the proposed effects of chemicals in plants for an actual experiment, these factors must be considered before the chemical treatment, and the best method for the treatment of the chemicals tested was floating and vacuum infiltration in the dicot and the monocot leaves, respectively, as drawn from Chl fluorescence imaging analysis.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.346-354
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• 1993

The diamond particles and films were deposited on Si and qurtz substrate for $CH_4-H_2$ mixed gas by using RF plasma CVD. The temperature of substrate and the thinkness of films deposited on Si substrate were uniformly kept up by inserting metal plate between substrate and substrate holder. On increasing the reaction pressure in the same discharge power, the morphologies of films were changed from well-defind films to micro-crystal or ball-like. When diamond films were deposited on Si substrate from $CH_4-H_2$ mixed gas, we obtained well-defined diamond films at lower concentration than 0.5 vol% of $CH_4/H_2$. The deposited diamond films were indentified by SEM, XRD and Raman spectroscopy.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.20-24
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• 1998

Photploymer films are widely used in printing and electronic industries, and their usage is expanding to encompass holography, data storage and data processing, optical waveguides and compact disks, etc. One of widely used photoplymerization initiator, 20chloro-hexaarylbiimidazole (o-Cl-HABI), is studied by laser flash photolysis in dichloromethane solution in the absence and presence of the visible light photosensitizing dye, 2, 5-bis[(2, 3, 6, 7 -tetrahydro- 1H, 5H -benzo [i, j,] quinolizin -1-yl) methylene]-cyclopenta-none, (JAW). In the presence of JAW, an increase in triarylimidazolyl radicals L.formation is observed in relative to the absence of JAW. The mechanism of this photosensitizing dissociation is concluded as the dissociation of the o-Cl-HABI radical anion formed by the electron transfer from excited singlet state of JAW to o-Cl-HABI. The observed formation of L.radicals exhibits a linear dependence on o-Cl-HABI concentration. The rate constant of electron transfer obtained from this dependence is equal to (1.0$\pm$0.2) x $10^9 M^{-1}s^{-1}$. No reaction between the excited triplet state of JAW and o-Cl-HABI is found.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.225-233
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• 2001

Distortion of Secondary Ion Mass Spectrometry(SIMS) depth profile, which is usually observed when the analysis is made using oxygen flooding on the surface of Si with oxide on it, has been corrected. The origin of distortion has been attributed to depth calibration error due to sputter rate difference and concentration calibration error due to relative sensitivity factor(RSF) difference between $SiO_2$ and Si layers, In order to correct depth calibration error, artifact in analysis of sodium ion on oxide was used to define the interface in SIMS depth profile and oxide thickness was measured with SEM and XPS. The differences of sputter rate and RSF between two layers have been attributed to volume swelling of Si substrate occurred by oxygen flooding induced oxidation. The corrected SIMS depth profiles showed almost the same results with those obtained without oxygen flooding.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.643-643
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• 2013

Recently, synthesis of low-dimensional nanostructures is gaining more importance due to their structural properties and growing potential applications. On the other hand, luminescent materials doped with rare earth ions have drawn immense attention. The commercial phosphors are based on many host materials. Among them, tungstates are being currently investigated by many research groups owing to a wide range of applications. Tungstates are formed by different metal cations (e.g., SrWO4, Na2WO4, NiWO4, Cr2WO6, and ZrW2O8) and their structure depends on the size of the metal cation. Tungstates with large bivalent cations (${\gg}0.1\;nm$) have the scheelite structure and the wolframite structure with smaller ions (＜0.1 nm). Strontium tungstate has the scheelite structure which is tetragonal with space group I41/a. The luminescent properties of the tungstate have been extensively explored in application fields such as sensors, detectors, lasers, photoluminiscent devices, photo catalysts, etc. In this work, we synthesized SrWO4 phosphors with different Eu3+ concentrations by using a facile route. The morphology was analyzed by using a field-emission scanning electron microscope, which exhibits the spherical shape. Transmission electron microscope image revealed the spheres composed of nanoparticles. X-ray diffraction patterns confirmed their tetragonal shape. The photoluminescence excitation and emission spectra were analyzed by varying the Eu3+ concentration, which shows a dominant red emission.