• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.449-453
• /
• 1996

In order to improve EL performance, anthracene was doped into the 8-hydroxyquinoline-aluminum (Alq$^3$) light-emitting layer of organic double layered EL cells. The EL cells were fabricated on ITO glass substrates by vacuum deposition. Doping of anthracene to the light-emitting $Alq^3$layer was performed by means of co-evaporation. The doping concentration was changed in the range of 5 to 30 wt.%. It was confirmed that anthracene doping of appropriate concentration increased the available current density and brightness of the EL cells. Carrier mobility of the $Alq^3$ layer was measured by time of flight method. The influence of anthracene doping on the cell performance was discussed.

• Journal of the Korean Chemical Society
• /
• v.66 no.5
• /
• pp.341-348
• /
• 2022

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

• The Journal of the Convergence on Culture Technology
• /
• v.7 no.4
• /
• pp.845-855
• /
• 2021

In this study, Camellia sinensis Leaf cultivated in Boseong was extracted by vacuum distillation and hydrothermal extraction methods, and we performed in vitro experiments such as antioxidant, anti-wrinkle, whitening, and antibacterial activity test and HPLC analysis. Wrinkle improvement (elastase inhibition assay) and whitening effect (mushroom tyrosinase inhibition assay) of Boseong vacuum distilled extract have excellent results and IC50 values of vacuum distillation extract was measured at a lower concentration than that of the hydrothermal extract. The antioxidant activity of the Boseong hydrothermal extract was excellently measured in DPPH radical and ABTS+ radical scavenging activity, SOD-like activity, and total polyphenol content. In the antibacterial experiment, the Boseong hydrothermal extract formed a clear zone for the Staphylococcus aureus and Cutibacterium acnes strain. As a result of HPLC analysis, EGCG and caffeine in the hydrothermal extract were 40.29 mg/g, 9.94 mg/g respectively, and caffeine in the vacuum distilled extract was 3.40 mg/g. Therefore, we examined that Boseong Camellia sinensis vacuum distilled extract has excellent anti-wrinkle and whitening effect, and its hydrothermal extract has good antioxidant and antibacterial efficacy.

• Corrosion Science and Technology
• /
• v.16 no.5
• /
• pp.265-272
• /
• 2017

Inhibition of pitting corrosion of the copper sprinkler tubes by removing dissolved oxygen in water with sodium sulfite was studied on the wet sprinkler systems operated in 258 household sites. First, air in the sprinkler tubing was removed by vacuum pumping. The tube was then filled with sodium sulfite dissolved in water. Sodium sulfite was very effective in maintaining a very low dissolved oxygen concentration in water in the sprinkler tube for the observation period of six months. Water leakage from the copper sprinkler tube was reduced significantly by using sodium sulfite. Both pitting corrosion process and pitting corrosion inhibition mechanism were investigated by examining microscopical and structural aspects of corrosion pits formed in failed copper sprinkler tube. Pitting corrosion was caused by pressurized air as well as sediments such as sand particles in copper tubes through oxygen concentration cells. It was confirmed microscopically that growth of corrosion pits was stopped by reducing dissolved oxygen concentration to a very level by using sodium sulfite.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.16 no.1
• /
• pp.1-7
• /
• 2004

This study has been numerically conducted to investigate the removal efficiency of Volatile Organic Compound (VOC) for different photocatalytic honeycomb filters. Recently, the photocatalysis is being applied to air-cleaner, air-conditioner and vacuum-cleaner with the capability of air-purification, sterilization and antibiosis. However, photocatalysis is less efficient than other methods for removing VOC except in the case of low concentration. So far most of studies have focused on an improvement of the photocatalytic materials, but this study have placed emphasis on the improvements of shape of photocatalytic honeycomb filter. UV irradiation, concentration profile and pressure drop have been investigated for different cross sections of filters and for different filter lengths. Light intensity is dropped sharply with increasing distance from the UV-lamp, and becomes very low in the middle of the filters. Since photocatalytic reaction rate is a function of light intensity, VOC concentration gradient might be small in the middle of long filters. Thus, most of reaction have risen within only three times of dimensionless axial distance. These results can be used effectively for the design of advanced photocatalytic honeycomb filters.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.294.1-294.1
• /
• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

• Journal of the Korean Vacuum Society
• /
• v.13 no.1
• /
• pp.22-28
• /
• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.327-332
• /
• 1996

In this study, the effects of $WSi_x$, thickness and fluorine concentration in tungsten polycide gate structure on gate oxide were investigated. As $WSi_x$, thickness increases, gate oxide thickness increases with fluorine incorporation in gate oxide, and time-to-breakdown($T_{BD,50%}$) of oxide decreases. The stress change with $WSi_x$ thickness was also examined. But it is understood that the dominant factor to degrade gate oxide properties is not the stress but the fluorine, incorporated during $WSi_x$ deposition, diffused into $WSiO_2$ after heat treatment. In order to understand the effect of fluorine diffusion into oxidem fluorine ion implanted gates were compared. The thickness variation and $T_{BD,50%}$ of gate oxide is saturated over 600 $\AA$ thickness of $WSi_x$. The TEM and SIMS studies show the microstructure less than 600 $\AA$ thickness is dense and flat in surface. However, over 600$\AA$, the microstructure of $WSi_x$ is divided into two parts: upper porous phase with rugged surface and lower dense phase with smmoth interface. And this upper phase is transformed into oxygen rich crystalline phase after annealing, and the fluorine is captured in this layer. Therefore, the fluorine diffusion into the gate oxide is saturated.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.213-218
• /
• 2001

ZnO and ZnO:In films were deposited on the glass substrates by a spray pyrolysis method. It is found that ZnO films were polycrystalline with the preferred orientation (002) and have a hexagonal structure with lattice constants of a=3.242 $\AA$ and c=5.237 $\AA$. The crystalline structure of ZnO:In films deposited at the In content of 0~6.03 at. % were the same as that of ZnO films, but its lattice constants was slightly larger than those of ZnO films. The relative atomic ratios of metal ion of ZnO:In films were in accordance with those of the spray solution within the experimental error. The minimum resistivity of and the maximum carrier concentration of 19.1 $\Omega\cdot\textrm{cm}$ and the maximum carrier concentration of $2.11\times10^{19}\textrm{cm}^{-3]$ obtained from the ZnO:In films when In content was 2.76 at. %. The optical transmission of the sample grown at the In content of 3.93 at. % was about 95% in the wavelength between 400 and 800 nm.

• Journal of the Korean Vacuum Society
• /
• v.6 no.4
• /
• pp.359-363
• /
• 1997

We have investigated the surface characteristics of n-GaAs (100) treated with Ar plasma (40 W, 5~120 sec) by photoreflectance (PR) measurement. With increasing Ar plasma treatment time, the intensity of $E_0$ peak observed to the minimum at 5 sec. The surface electric field ($E_0$), net carrier concentration ($N_P-N_A$), and surface state density ($Q_{SS}$ are $1.05{\times}10^5V/cm$ and $1.31{\tiems}10^{17}cm^{-3}$ and $1.64{\times}10^{-7}C/m^2$, respectively. These values were about 57.1, 81.4 and 56.9% smaller than those of bulk n-GaAs. On the other hand, the concentration of compensation centers ($N_A$) was maximum with value of $5.75{\times}10^{17}cm^{-3}$ at 5 sec. And penetration depth of defects generated after treated with Ar plasma was about 450 $\AA$ from surface.