• Journal of Soil and Groundwater Environment
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• v.6 no.3
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• pp.3-12
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• 2001

This study conducted to Investigate the movement of fertilized nutrients in a volcanic ash soil in Jeju using by the pressure-vacuum soil water sampler. The percolated water to measure the ion concentration of leachates was taken from a lysimeter at depths of 20, 40, 60, 80, 100 and 120 cm in the soil in where a corn and potato were cultivated as a preceding and succeeding crop, respectively. Fertilizers of N-$P_2$O$_{5}$-$K_2$O were applied at the rate of 36-30-30 kg $10a^{-1}$ for the corn and 28-22-24 kg $10a^{-1}$ for the potato prior to planting of both crops. The highest concentrations of Cl , $NO_3$-N, $Ca^{+2}$ and $K^+$ in percolates were showed at 20cm and 40cm in soil depth at one month after fertilizing, and then gradually moved and reduced into below soil depths. At 5.5 months after fertilization, the concentrations in all soil depths were similar with the value of before fertilization. At depth of 120cm, the concentration of NO$_3$-N and the other cations in leachate was highest 1 to 1.5 months after fertilization. pH in percolated water was negatively correlated with NO$_3$-N concentration while the concentration of $NO_3$-N showed positive correlation between Cl, $Ca^{+2}$ and $Mg^{+2}$ concentrations. This result indicated that those cations can be leached out by accompanied with $NO_3$-N.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Journal of Biosystems Engineering
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• v.13 no.4
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• pp.38-45
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• 1988

The freeze drying of garlic juice was carried out in a vacuum freeze dryer, laboratory size, by backface heating. The factors which influence the rate of freeze drying, the pressure of drying chamber, the plate temperature, the concentration and the thickness of a sample, were discussed in this study. The drying rate was in proportion to the drying chamber pressure and when the pressure was at 1.5 torr, the foaming occured on the surface of materials, so this condition was not suitable for freeze drying. As the temperature of plate increased, drying rate increased, but when the temperature was $20^{\circ}C$, it was impossible to accomplish freeze drying because the foaming and the dispersion occured in a sample. The higher the concentration of a sample was, the lower drying rate was.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.327-328
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• 2012

의료분야의 진단 방사선 장비는 초기의 필름방식 및 카세트에서 진보되어 현재는 디지털방식의 DR (Digital Radiography)이 널리 사용되며 이에 관한 연구개발이 활발히 진행 되고 있다. DR은 일반적으로 직접방식과 간접방식으로 나눌 수 있다. 직접방식의 원리는 X선을 흡수하면 전기적 신호를 발생 시키는 광도전체(Photoconductor)를 사용하여 광도전체 양단 전극에 전압을 인가하여 전기장을 유도한 가운데, X선을 조사하면 광도전체 내부에서 전자-전공쌍(Electron-hole pair)이 생성된다. 이것은 양단에 유도된 전기장의 영향으로 전자는 +극으로, 전공은 -극으로 이동하여 아래에 위치한 하부기판을 통하여 이미지로 변조된다. 간접방식은 X선을 흡수하면 가시광선으로 전환하는 형광체(Scintillator)를 사용하여 조사된 X선을 형광체에서 가시광선으로 전환하고, 이를 Photodiode와 같은 광변환소자로 전기적 신호로 변환하여 방사선을 검출하는 방식을 말한다. 본 연구에서는 직접방식에서 이용되는 광도전체 중 흡수효율이 높고 Mobility가 뛰어난 CdTe를 선정하여 PVD (Physical vapor deposition)방식으로 300 m의 두께를 목표로 하여 증착을 진행하였다. Chamber의 진공도가 $2.5{\times}10^{-2}$ Torr로 도달 시점부터, Substrate와 Boat에 열을 가하였다. Substrate온도는 $350^{\circ}C$, Boat온도는 $300^{\circ}C$도로 설정하여 11시간 동안 진행하였다. Substrate온도는 $303^{\circ}C$, Boat온도는 $297^{\circ}C$도부터 증착이 시작되어 선형적인 증가세 추이를 나타내어 Substrate 및 Boat온도가 설정 값에 도달 하였을 때, $25{\sim}34.4{\AA}/s$ 증착율을 나타내었다. 하부전극의 물질에 따른 CdTe증착 효율성 평가를 진행한 후, 그에 따른 전기적 특성을 알아보았다. 하부전극의 물질로는 ITO (Indium Tin Oxide), Parylene이 코팅 된 ITO, Au, Ag를 사용하였다. 하부전극의 물질 상단에 Thermal Evaporation System을 사용하여 CdTe를 증착한 후, Cdte 상단에 Au를 증착 시켜 민감도(Sensitivity)와 암전류(Dark current)를 측정하였다. 증착 결과 ITO와 Ag상단에 증착시킨 CdTe박막은 박리가 되었고, Au와 Parylene이 코팅 된 ITO에는 CdTe박막이 안정적이게 형성이 되었다. 이 두 샘플에 대하여 동일한 조건으로 민감도와 암전류를 측정 시, Parylene이 코팅된 ITO를 하부전극으로 사용한 CdTe박막은 0.1021 pA/$cm^2$의 암전류와 1.027 pC/$cm^2$의 민감도를 나타낸 반면, Au를 하부전극으로 사용한 CdTe박막은 0.0381 pA/$cm^2$의 암전류와 1.214 pC/$cm^2$의 민감도를 나타내어 Parylene이 코팅된 ITO보다 우수한 전기적 특성을 나타내었다. 따라서 Au는 CdTe박막 증착 시, 하부전극 기판으로서 뛰어난 특성을 나타내는 것을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.186-196
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• 2009

Since it is difficult to extract a high flux ion beam directly at an energy of hyperthermal range ($1{\sim}100\;eV$), especially, lower than 50 eV, the ions should be neutralized into neutral particles and extracted as a neutral beam. A plasma source required to generate and efficiently transport high flux hyperthermal neutral beams should be easily scaled up and produce a high ion density (${\ge}10^{11}\;cm^{-3}$) even at a low working pressure (${\le}$ 0.3 mTorr). It is suggested that the required plasma source can be realized by Electron Cyclotron Resonance (ECR) plasmas with diverse magnetic field configurations of permanent magnets such as a planar ECR plasma source with magnetron field configuration and cylindrical one with axial magnetic fields produced by permanent magnet arrays around chamber wall. In both case of the ECR sources, the electron confinement is based on the simple mirror field structure and efficiently enhanced by electron drifts for producing the high density plasma even at the low pressure.

• Restorative Dentistry and Endodontics
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• v.21 no.1
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• pp.202-217
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• 1996

The purpose of this study was to compare the degree of microleakage of Glass-Ionomer root canal sealer possessed several enviable properties with that of the other sealers and to evaluate clinical performance. One hundred twenty single-rooted teeth were used in this experiment. The teeth were cleaned mechanically and immersed for 24 hours in 5.25% sodium hypochlorite and clinical crowns then were removed. After the root canals were instrumented using a step-back technique. one hundred twenty single-rooted teeth were divided into five groups of 24 in each. Group 1 : Tubli-Seal(Kerr Co., MI, U.S.A/ZOE-based), lateral condensation Group 2 : Sealapex(Kerr/Sybron, Romulus, MI/ $Ca(OH)_2$-based), lateral condensation Group 3 : AH 26(De Trey Co., Zurich Switzerland/Resin-based), lateral condensation Group 4 : Ketac-Endo(ESPE GMBH & CO. KG Seefeld:oberbay. Germany/ Glass Ionomer Cement-based), lateral condensation Control group : no sealer. lateral condensation And then. the root canals were obturated by lateral condensation technique with gutta-percha and experimental sealers. The control group were obturated without sealer. The teeth were placed in a vacuum chamber for 15 minutes and immersed 2% methylene blue under vacuum for 15 minutes. The teeth were passively stained for 1 week and 2 weeks and were cleared and evaluated for linear dye leakage using Tool maker's microscope(${\times}200$). The results were as follows: 1. There were statistically significant differences in the degree of dye penetration between the control group and experimental groups(p<0.05). 2. In the experimental groups, Sealapex($1.2871{\pm}0.9180mm$) exhibited the lowest mean value of dye penetration, followed by Ketac-Endo($1.4432{\pm}0.8082mm$), AH 26($1.5030{\pm}0.7752mm$) and Tubli-Seal($1.6458{\pm}1.0292mm$)(p>0.05). 3. There were statistically significant differences in the variation of microleakage between 1 week and 2weeks in Tubli-Seal and Seal apex groups (p<0.05). 4. The degree of dye penetration of all groups were increased as the time elapsed and AH 26 showed the lowest variation(+0.11) and Tubli-Seal(+ 1.03) showed the highest variation (p<0.001).

• Analytical Science and Technology
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• v.27 no.4
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• pp.187-195
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• 2014

It is very important to minimize the damage of latent fingerprints at enhancing the contrast. This study proves the enhancement effects of cyanoacrylate-fumed latent fingerprints using p-dimethylaminobenzealdehyde (DMAB) on semi-porous surfaces and the influence factors. The latent fingerprints in experiment were developed for cyanoacrylate treatment in a vacuum chamber and used after drying at room temperature for 24 hours. For fluorescence staining, the cyanoacrylate-developed marks using DMAB were sublimated during 48 hours under the different conditions of surface area, temperature, atmospheric pressure. First experiment showed how surface area effects on the sublimation rate and fluorescence intensity by DMAB of particle size and container size. In addition, the fluorescence staining using DMAB with solvent-free contact method had the greatest fluorescence intensity after 36 hours and a low fluorescence intensity over a certain size of surface area. Second experiment showed that the evaporation of DMAB solid crystals got a satisfying result in a temperature of $20^{\circ}C$ and reduced time to get the greatest fluorescence intensity. It took a long time to get a optimum level of fluorescence intensity at $30^{\circ}C$ or more and it was less effective in fluorescence intensity. Third experiment on the pressure indicated that the fluorescence intensity of vacuum was weaker than nonvacuum but it was inapplicable to very high variations in pressure.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.287-293
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• 2006

Diamond-like carbon (DLC) film was deposited using benzene $(C_6H_6)$ by r. f-plasma assisted chemical vapor deposition. The tribological properties of the DLC film were tested by rotating ball-on-disc type tribometer isolated by a chamber. The tribological test was performed in air environment of relative humidity ranging from 0 to 90% in order to observe the tribological behavior of the DLC film with the change of humidity. We used steel ball and DLC coated steel ball to investigate the effect of the counterface material. Using steel ball, the friction coefficient of DLC film increased from 0.025 to 0.2 as the humidity increased from 0% to 90%. In case of DLC coated steel ball which didn't form the Fe-rich debris, the friction coefficient showed much lower dependence of humidity as 0.08 in relative humidity 90%. We confirmed that the high humidity dependence of the friction coefficient using steel ball resulted from the increase of debris size with humidity and the formation of Fe-rich debris by the wear of steel ball. And the friction coefficient was immediately dropped when the relative humidity changed from 90% to 0% during test using steel ball. From this result, we confirmed that the effect of the Fe-rich debris on the friction coefficient was that Fe element in debris formed the highly sensitive graphitic transfer layer to humidity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.