• Koreanishche Zeitschrift fur Deutsche Sprachwissenschaft
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• v.3
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• pp.35-55
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• 2001

In der Semiotik ist es sehr wichtig, den Rahmenbereich des Zeichens festzustellen, weil der Bereich des Zeichens je nach Wissenschaftler unterschiedlich ist. Dementsprechend muss jedes Forschungsergebnis in der Semiotik hinterfragt werden, um sichergehen zu $k\"{o}nnen$, ob es zur Semiotik $geh\"{o}rt$ oder nicht. Daher besteht $zun\"{a}chst$ die Notwendigkeit, zu bestimmen, was ein Zeichen ist. In diesem Zusammenhang versuchten wir in diesem Aufsatz, damit wir den Begriff 'Zeichen' besser erfassen $k\"{o}nnen$. das Zeichen von C. S. Peirce mit dem van W. v. Humboldt zu vergleichen. Zu Beginn dieses Aufsatzes stellten wir dar, was ein Zeichen ist. Dieser Vorgang ist notwendig, damit mit Hilfe des allgemeinen Begriffes des Zeichens ein Vergleich zwischen Peirce und Humboldt angestellt werden kann. Danach stellten wir die Zeichentheorie von Peirce vor. Nach Peirce ist die Sprache eine Untergattung von drei Zeichensorten, die Ikon, Index und Symbol genannt werden. Nach ihm gehbrt das Symbol zur Sprache. $F\"{u}r$ ihn ist der Interpretant im Zeichenbegriff am wichtigsten, weil ein Zeichen immer eines Interpretantes bedarf, der das Zeichen interpretiert. Aber der Interpretant ist kein Individuum, sondern ein interpretierendes $Bewu{\ss}tsein$, also eine traditionelle Gesellschaft, die ein Muster zum Interpretieren bietet. $Anschlie{\ss}end\;besch\"{a}ftigten$ wir uns mit der Theorie von Humboldt. Er benutzt verschiedene Zeichenbegriffe wie z.B. Schriftzeichen, Lautzeichen, Sprachzeichen, grammatische Zeichen, $h\"{o}rbare$ Zeichen, zeitliche Zeichen und $r\"{a}umliche$ Zeichen. Bei ihm ist die Unterscheidung zwischen Wort und Zeichen besonders wichtig, weil das Wort nicht zum Zeichen $geh\"{o}rt$, wie wir es normalerweise annehmen. Er behauptet, dass das Wort beim Produzieren motiviert ist. Daher ist nach ihm das Wort transsemiotisch. $Dar\"{u}ber$ hinaus muss das Zeichen und das Wort im Zusammenhang zwischen Sprache und Denken betrachtet werden. Wenn man das Wort als Zeichen betrachtet, ist das Wort ein Zwischending zwischen dem Sprechenden und dem Ding. Damit $k\"{o}nnen$ wir schlussfolgern; 1) Bei Humboldt ist das Zeichen em Mittel zum Denken, das sich vom transsemiotischen Wort unterscheidet. 2) Nach Peirce besteht ein Zeichen aus Ikon, Index und Symbol. Im Zeichen, das aus Reprasentamen, Interpretant und Objekt besteht, ist der Interpretant am wichtigsten, denn ein Zeichen, dass keinen Interpretant hat, ist kein Zeichen mehr, das interpretierbar ist.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.505-512
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• 2014

A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2743-2750
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• 2011

Lanthanide(III)-cored complex as a wavelength conversion material has been successfully designed and synthesized for highly efficient dye-sensitized solar cells, for the first time, since light with a short wavelength has not been effectively used for generating electric power owing to the limited absorption of these DSSCs in the UV region. A black dye (BD) was chosen and used as a sensitizer, because BD has a relatively weak light absorption at shorter wavelengths. The overall conversion efficiency of the BD/WCM device was remarkably increased, even with the relatively small amount of WCM added to the device. The enhancement in $V_{oc}$ by WCM, like DCA, could be correlated with the suppression of electron recombination between the injected electrons and $I_3{^-}$ ions. Furthermore, the short-circuit current density was significantly increased by WCM with a strong UV light-harvesting effect. The energy transfer from the Eu(III)-cored complex to the $TiO_2$ film occurred via the dye, so the number of electrons injected into the $TiO_2$ surface increased, i.e., the short-circuit current density was increased. As a result, BD/WCM-sensitized solar cells exhibit superior device performance with the enhanced conversion efficiency by a factor of 1.22 under AM 1.5 sunlight: The photovoltaic performance of the BD/WCM-based DSSC exhibited remarkably high values, $J_{sc}$ of 17.72 mA/$cm^2$, $V_{oc}$ of 720 mV, and a conversion efficiency of 9.28% at 100 mW $cm^{-2}$, compared to a standard DSSC with $J_{sc}$ of 15.53 mA/$cm^2$, $V_{oc}$ of 689 mV, and a conversion efficiency of 7.58% at 100 mW $cm^{-2}$. Therefore, the Eu(III)-cored complex is a promising candidate as a new wavelength conversion coadsorbent for highly efficient dye-sensitized solar cells to improve UV light harvesting through energy transfer processes. The abstract should be a single paragraph which summaries the content of the article.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Chest Surgery
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• v.43 no.1
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• pp.104-107
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• 2010

Acute respiratory distress syndrome (ARDS) is difficult to treat and it is often fatal. If the medical treatment for ARDS is not effective, then extracorporeal membrane oxygenation (ECMO) can be applied to the patient. A 22-year-old female who suffered multiple traumatic injuries due to a car accident presented with acute respiratory distress syndrome. Veinarterial extracorporeal membrane oxygenation (VA ECMO) was started to treat her respiratory failure. With the VA ECMO, the systemic oxygen saturation remained at only 84%, and so the ECMO system was switched to V-VA ECMO via an additional venous outflow through the right jugular vein to increase both the systemic and pulmonary oxygen saturation. After conversion to the V-VA type ECMO, the systemic oxygen saturation increased to 94% and the partial pressure of oxygen ($PaO_2$) increased to 65 mmHg. We report here on a successful case of ECMO conversion from the VA type to the V-VA type in a patient with severely hypoxic respiratory failure.

• Journal of Navigation and Port Research
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• v.31 no.3 s.119
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• pp.229-233
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• 2007

This paper presents the performance of PV(Photovoltaic) system, the design of MPPT(Maximum Power Point Tracker). Output of PV power system is DC, and PV power system is linked to the DC bus. The current(I)-voltage(V) output characteristic of PV cells changes with solar irradiance and cell temperature as parameters. As various PV modules respond differently to each of the parameters cited above. Maximum output of PV modules am be achieved by MPPT(Maximum Power Point Tracker) algorithm This paper includes a discussion on the performance of PV module, MPPT algorithm and the influence of PV module angle.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1066-1070
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• 2003

Recently technologies have created new principle and theory but the PID control system remains its popularity as the PID controller contains simple structure, including maintenance and parameter adjustment being so simple. Thus, this paper proposes auto tune PID by fuzzy logic controller based on FPGA which to achieve real time and small size circuit board. The digital PID controller design to consist of analog to digital converter which use chip TDA8763AM/3 (10 bit high-speed low power ADC), digital to analog converter which use two chip DAC08 (8 bit digital to analog converters) and fuzzy logic tune digital PID processor embedded on chip FPGA XC2S50-5tq-144. The digital PID processor was designed by fundamental PID equation which architectures including multiplier, adder, subtracter and some other logic gate. The fuzzy logic tune digital PID was designed by look up table (LUT) method which data storage into ROM refer from trial and error process. The digital PID processor verified behavior by the application program ModelSimXE. The result of simulation when input is units step and vary controller gain ($K_p$, $K_i$ and $K_d$) are similarity with theory of PID and maximum execution time is 150 ns/action at frequency are 30 MHz. The fuzzy logic tune digital PID controller based on FPGA was verified by control model of level control system which can control level into model are correctly and rapidly. Finally, this design use small size circuit board and very faster than computer and microcontroller.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2011.03a
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• pp.71-71
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• 2011

전류를 흘렸을 때 양극과 음극에 따라 움직이는 미세한 나노입자를 이용하여 색, 글자, 그림 등을 표시하는 응용디스플레이 기술이 전기영동디스플레이(electrophoretic display)이다. 최근 전자종이 등 상품화가 진행되면서 전기영동디스플레이에 대한 관심증대와 함께 기술개발이 지속적으로 진행되고 있다. 본 연구에서는 분산중합을 이용하여 $TiO_2$ core 입자에 polystyrene을 shell로 코팅하여 마이크로캡슐형의 전기영동디스플레이에 적합한 입자를 제조하고 성능을 분석하였다. 먼저 분산제의 종류, 모노머의 농도, 개시제의 농도에 따라 제조된 대전복합입자의 크기 및 분포를 보면, 분산제의 종류를 달리 하였을때를 제외하고 대체로 균일하였다. 입경의 변화를 보면, 약 200-300nm의 $TiO_2$가 개질에 의해 400-500nm의 입경을 나타내는 것으로부터 200nm 두께의 shell층을 갖는다는 것을 확인 할 수 있었다. 또한 분산제의 종류에 따라서는 분산제를 사용하지 않는 경우가 오히려 제조된 입자의 분포가 균일함을 알 수 있었고 모노머의 농도에 따른 변화는 볼 수 없었으며 입경분포가 균일한 입자가 제조되었음을 알 수 있었다. 대전복합입자의 TGA 곡선으로부터 $300^{\circ}C$ 부근에서 polystrene shell에 의한 분해를 볼 수 있었고 $600^{\circ}C$ 이후에 잔류된 core의 $TiO_2$ 입자를 확인 할 수 있었다. 이 결과로부터 $TiO_2$ core-polystyrene shell형의 전자 종이용 대전복합입자의 제조를 확인 할 수 있었다. 또한 제조된 대전복합입자의 zeta potential을 보면, (+)전하를 띄며 64.8mV의 비교적 높은 zeta potential을 가지는 것을 확인 할 수 있었다. 그리고 $TiO_2$ 대전복합입자와 같은 방법으로 제조된 흑색 대전복합입자를 혼합하여 cell test를 측정한 결과, cell에 ${\pm}$10V의 저전압을 가했을 때에도 비교적 응답속도가 빠른 입자의 구동현상을 확인 할 수 있었다.

• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.559-565
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• 2011

The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.94-94
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• 1999

반도체 Hall 효과를 이용하여 자계를 검출하여 이를 전압신호로 출력하는 자기센서로는 주로 GaAs, InSb, InAs 등의 박막이 사용되고 있다. 자기센서의 응용분야가 최근에는 직류전류의 무접촉 검출, 자동차의 무접촉 회전 검출, 산업용 기계의 제어용 무접촉 위치검출 분야로 확대되고 있어 그 수요가 급증하고 있다. 이중 Hall 소자의 응용분야중 많은 활용이 기대되고 있는 자동차용 무접촉 센서는 -4$0^{\circ}C$~15$0^{\circ}C$의 온도범위에서 안정하게 작동하여야 하므로 온도 안정성이 매우 중요하다. 그러나 Hall 소자 시장의 80%를 점유하고 있는 InSb Hall 소자는 온도가 올라감에 따라 저항이 급격히 낮아지는 성질을 가지고 있으므로 10$0^{\circ}C$ 이상의 온도에서 사용하는 것이 불가능하다. 한편 InAs(에너지갭~0.18eV)는 InSb보다 에너지 갭이 크므로 고온에서도 작동이 가능하고 자계변화에 따른 출력의 직진성이 매우 좋다는 장점을 가지고 있다. 이러한 InAs Hall 소자를 실현하기 위해서 가장 중요한 것이 고품위의 InAs의 박막 성장기술이다. InAs 박막을 성장하기 위해서 사용되고 있는 기판은 GaAs이다. 그러나 GaAs 기판과 InAs 박막 사이에는 약 7% 정도의 격자부정합이 존재하기 때문에 높은 이동도를 가지는 고품위 박막을 성장시키기가 매우 어렵다. 이에 본 연구에서는 분자선에피택시 방법을 이용하여 GaAs 기판위에 고품위의 InAs 박막을 성장하는 기술을 연구하였으며, 성장된 InAs 박막의 특성을 DCX 및 Hall effect 등으로 조사하였다. InAs 박막 성장시 기판은 <0-1-1> 방향으로 2$^{\circ}$ off 된 GaAs(100)를 사용하였다. InAs 박막성장시 기판온도는 48$0^{\circ}C$로 하고 GaAs buffer 두께는 2000$\AA$로 하여 As flux 및 Si doping 농도등을 변화시켰다. 그 결과 Si doping 농도 2.21$\times$1017/am에서 10,952cm2/V.s의 이동도를 얻었다.