• Journal of Arbitration Studies
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• v.25 no.3
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• pp.33-58
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• 2015

Arbitration clauses or institutional arbitration rules rarely, if ever, specify the law applicable to the arbitration agreement. A wide range of laws may thus govern this question, such as the law at the place of arbitration, the law where the agreement or the award is enforced or the law of the main contract between the parties. It is also conceivable that international uniform law or soft law may play a role. Tribunals and courts seized with this question must consequently decide which of these various laws shall apply to verify the existence and validity of the arbitration agreement. This paper picks up on this controversially debated conflict of laws issue. At times, this debate is characterized by a strong divide between arbitration and international trade law practitioners. But are the different approaches really leading to diverging results in arbitral practice?

• Mycobiology
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• v.37 no.1
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• pp.72-76
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• 2009

To investigate the growth response of various crop species to mycorrhizal inoculation, arbuscular mycorrhizal fungi were applied to Glycine max, Vigna angularis, Senna tora, Hordeum vulgare var. hexastichon. Zea mays, Sorghum bicolor, Allium tuberosum, Solanum melongena, and Capsicum annuum. The biomass of the inoculated crops was measured every two weeks for the 12-week growth period. By measuring biomass, we calculated the mycorrhizal responsiveness of the nine crop species. Among the nine crop species, four species showed a significant response to mycorrhizal inoculation. The shoot biomasses of V. angularis, C. annuum, A. tuberosum, and S. tora significantly increased with mycorrhizal inoculation.

• Applied Microscopy
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• v.46 no.3
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• pp.164-166
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• 2016

Electron channeling contrast imaging (ECCI) is a powerful analyzing tool for identifying lattice defects like dislocations and twin boundaries. By using diffraction-based scanning electron microscopy technique, it enables microstructure analysis, which is comparable to that obtained by transmission electron microscopy that is mostly used in defect analysis. In this report, the optimal conditions for investigating crystal defects are suggested. We could obtain the best ECCI images when both acceleration voltage and probe current are high (30 kV and 20 nA). Also, shortening the working distance (6 mm) enhances the quality of defect imaging.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.307-307
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• 2010

ICRF 또는 NB 시스템에 의해 가열된 고에너지 이온들을 측정하는 것은 핵융합 플라즈마에서 중요한 과제 중의 하나이다. 특히 ICRF를 이용한 D(H) 플라즈마의 H minority의 가열은 H의 분율에 따라 가열의 정도가 달라지고 이 결과는 이온의 고에너지 측정을 통해서 확인할 수 있으므로 정확한 고속 이온의 측정은 매우 중요하다. 본 연구에서는 고속 이온을 전하 교환된 중성입자로부터 측정하는 중성입자 검출기를 개발하였다. Si 광다이오드인 AXUV3ELA를 기반으로 50-300 keV 범위의 고에너지 H 및 D 이온을 측정할 수 있는 소형의 중성입자 검출기(Compact Neutral Particle Analyzer : CNPA)가 설계 제작되었다. 검출된 신호는 Pre-amp와 shaping amplifier를 통해 증폭되고 shaping 되며 마지막으로 다중채널 분석기(Multi Channel Analyzer : MCA)를 통해서 계수된다. 본 발표에서는 NPA의 구체적인 설계 특성과 함께 Am-241 gamma ray 선원을 이용한 NPA의 시험 및 보정결과를 보고할 예정이다.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.48 no.1
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• pp.31-37
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• 2003

Identification of compatible parental line is of great importance in introduction of useful characters to onion breeding program, beyond the severe hybridization barrier. Phylogenic analysis of Allium section Cepa was conducted through PCR by URPs, repeated sequences of A. fistulosum, and microsatellite markers. Totally 76 accessions originated from 21 countries were clustered into five groups at a 0.84-similarity level: group I;A. cepa and its wild relatives and A. cepa ssp. ascalonicum, group II; A. cepa ssp. wakegii, A. cepa ssp. proliferum and Samcheung-pa group III; A. fistulosum and A. altaicum, group IV; A. galanthum, group V; Soeckkori-pa. Samcheung-pa and Soekkori-pa, Korean local varieties, shared band type of both Cepa group and Altaicum group, indicating that those are derived from interspecific hybridization between A. fistulosum and A. cepa.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.46-50
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• 1990

Heteroface AlGaAs/GaAs drift solar cells with an active area conversion efficiency of 15.9% under one sun and AM 1.5 condition have been grown by molecular beam epitaxy(MBE). These drift solar cells have graded doping profiles in the base and emitter regions. The cells have a short circuit current density (Jsc) of 19.00 mA/cm\ulcorner an open circuit voltage(Voc) of 0.93 V, and f fill factor(FF) of 0.78, respectively. Conventional solar cells with fixed doping profiles were also grown by MBE for comparison with the drift solar cells. Even though the fabrication cost of MBE grown solar cell is higher, the expected highest conversion efficiency of the single or multiple cells could compensate for the increased cost, particularly in case of space applications.

• Solar Energy
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• v.18 no.3
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• pp.137-146
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• 1998

In this paper, the current status of manufacturing technologies for GaAs/Si solar cell were revived and provied new MOCVD. In the manufacturing process of GaAs/Si solar cells and an experiment to get the high efficiency GaAs solar cells, we must investigate the optimum growth conditions to get high quality GaAs films on Si substrates by MOCVD. The GaAs on Si substrates has been recognized as a lightweight alternative to pure substrate for space applicaton. Because its density is less the half of GaAs or Ge.So GaAs/Si has twofold weight advantage to GaAs monolithic cell. The theoretical conversion efficiecy limit of tandem GaAs/Si solar cell is 32% under AM 0 and $25^{\circ}C$ condition. It was concluded that the development of cost effective MOCVD technologies shoud be ahead GaAs solar cells for achived move high efficiency III-V solar cells involving tandem structure.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.125-132
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• 2010

Three organic sensitizers, JK-128, JK-129, and JK-130 containing quinoline unit are designed and synthesized. Under standard global AM 1.5 solar condition, the JK-130 sensitized solar cell gave a short circuit photocurrent density of 11.52 mA $cm^{-2}$, an open circuit voltage of 0.70 V, and a fill factor of 0.75, corresponding to an overall conversion efficiency of 6.07%. We found that the $\eta$ of JK-130 was higher than those of other two cells due to the higher photocurrent. The higher $J_{sc}$ value is attributed to the broad and intense absorption spectrum of JK-130.

• Journal of Welding and Joining
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• v.1 no.1
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• pp.13-20
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• 1983

본 연구는 후판 SEG아아크 용접 조건의 변수가 충격 강도에 미치는 영향을 검토함으로써 최적 용접 시공조건을 선정하는데 주목적을 두었다. 본연구를 통하여 얻은 바로는 32mm 후판을 SE G아아크 용접법을 적용하여 용접할 때 최적 용접 시공 조건은 다음과 같다. 1) 뒷면 받침재는 가볍고 취급하기 편리한 것이어야 한다. 2) 바람직한 저입열 용접은 입열량 160KJ/cm, 흠 각도 03$^{\circ}$, 루우트 간격 8mm, 와이어 돌출 길이 45mm, 전류 320~350AmP, 전압 36V, oscillation 폭 13mm의 용접 시공 조건하에서 적절히 이루어질 수 있다. 이상에서 선정된 용접 시공 조건을 사용하면 32mm 후판 SEG 아아크 용접에서는 용접 결함이 없고, ABS선급규정의 2A, 2YA 요구사항을 만족시킬 만한 성능의 용접부를 얻을 수 있다.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1512-1516
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• 1994

FLIC(Fluid in cell) method has been used for analyzing a cold gas flow field in an interrupter of a circuit treater since 1970s. In this paper FLIC method is applied to calculation of a cold gas flow and then combined with the simple are analysis method in order to investigate the flow field characteristics in a puffer type interrupter rated at 145kV 40kA. The results for a cold gas flow agree with the experimental measurement well. The other results such as pressure rise, arc temperature, post-arc current and so forth am also reasonable and show the possibility that the combined program can be applied to the design of UHV interrupters.