• 한국전자파학회논문지
• /
• 제12권1호
• /
• pp.27-36
• /
• 2001

In this paper, micromachined millimeter-wave cavity resonators ar presented. One-port and two-port cavity resonators at Ka-band are designed using 3D design software, HP $HFSS^{TM}$ ver. 5.5 Cavity resonators are fabricated on Si substrate, which is etched down for the cavity, bonded with a Quartz wafer in which metal patterns for the feeding line coupling slot are formed. One-port resonator shows the resonant frequency of 39.34 GHz, the return loss of 14.5 dB, and the loaded $Q(Q_{L})$ of 150. Two-port cavity resonator shows the resonant frequency of 39 GHz, the insertion and return losses of 4.6dB and 19,9dB, the loaded($Q_{L}$) and unloaded $Q(Q_{U})$) of 44.3 and 107, respectively.

• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
• /
• pp.141-145
• /
• 2002

In this paper, we have implemented the reflection type band-rejection filter by employing the 3-㏈ hybrid and the frequency-selective loads. The frequency-selective loads have been achieved with the 3-pole bandpass filter terminated by a 50-ohm load. The reflection type band-rejection filter is less sensitive to unloaded Q-factor of resonator than the conventional one. Measurements and simulations on the presented band-rejection filter in this paper show the excellent performances in passband and rejection-band.

• 대한전기학회논문지
• /
• 제43권4호
• /
• pp.613-619
• /
• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
• /
• pp.201-206
• /
• 2000

Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1031-1033
• /
• 1995

The microwave dielectric properties of (1-x)$LaAlO_3-xCaTiO_3$ system were investigated. As the amount of $LaAlO_3$ increased, the value of the unloaded Q increased, but the dielectric constant(${\varepsilon}_r$) decreased. The temperature coefficient of resonant frequency(${\tau}_f$) of $5ppm/^{\circ}C$ was obtained from the composition of $0.35LaAlO_3-0.65CaTiO_3$ in which the values of ${\varepsilon}_r$ and $Q{\cdot}f_o$ were 42 and 32,500, respectively.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.1103-1105
• /
• 1993

Microwave characteristics of the system (1-X) ${Na}_{1/2}{Sm}_{1/2}TiO_3$[NST]-X ${Li}_{1/2}{Nd}_{1/2}TiO_3$[LNT] were investigated. The dielectric constant and unloaded Q were 86,1950 respectively for NST at 3GHz and 80,500 for LNT. 0.4 NST - 0.6 LNT system has the dielectric constant ${\varepsilon}r$=86.2, Q=930(3GHz), temperature coefficient of the resonant frequency ${\tau}f$ = 8 ppm/$^{\circ}C$ when sintered at $1450^{\circ}C$ for 2h.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권5호
• /
• pp.403-408
• /
• 1994

Dielectric and structural properties of $Ba_{1-x}$(Z $n_{1}$3/T $a_{2}$3/) $O_{3}$+1 mol% Mn $O_{2}$ (x=0, 0.01, 0.02, 0.03, 0.04) ceramics was investigated at microwave frequencies. With $Ba_{+2}$ shortage, the sinterability and the unloaded Q( $Q_{u}$) were much improved, and the ordering in B site and the lattice distortion was greatly enhanced and the structure approached the completely ordered structure. $Q_{u}$ was strongly correlated with these factors such as ordering ratio, lattice distortion and sinterability, and had the maximum value of 7500 at x=0.01. The dielectric constant was near 30 and the temperature coefficient of the resonant frequency was 2 ppm/.deg. C at x=0.01.1.1.1.

• 한국전자파학회논문지
• /
• 제26권11호
• /
• pp.966-977
• /
• 2015

본 논문에서는 새로운 변형된 동축 공동 공진기를 제안하고, 대역통과 여파기를 설계한다. 제안된 공진기는 하나의 캐비티 내부에 ${\Gamma}$-형 또는 곡선형의 4개의 접지된 도체 포스트로 구성되어 있다. 일반 동축 공동 공진기 여파기와 달리 도체 벽이 없기 때문에 공간 효율이 개선되어 품질계수가 약 15 % 이상 향상되며, 동일한 품질계수 대비 35 % 이상의 크기 소형화가 가능하다. 또한, 인접하지 않은 공진기와 입출력 교차결합을 통해 4개의 조절 가능한 전송영점이 생성되어 차단대역의 감쇄특성을 향상시킬 수 있다. 제안된 여파기와 설계법은 모의실험과 제작 및 측정을 통해 검증되었다.

• 한국세라믹학회지
• /
• 제36권9호
• /
• pp.915-922
• /
• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권9호
• /
• pp.933-941
• /
• 1996

In this study, the Tx(Transmitting) and Rx(Receiving) band pass filter for personal communication services was constructed and designed using .lambda./4 TEM mode dielectric resonators. Band pass filter was composed of ceramics resonators which has been developed using ($Zr_{0.65}$,$Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramic and Unloaded-Q ( $Q_{o}$) of .lambda./4 TEM mode dielectric resonator with inner hole size 0.9mm and external size 3mm using silver electrode is 354.5 at 1.95GHz. For the band pass filter design and construction, the design theory and simulation results of band pass filter using J-inverter theory have been studied. The parameters which are evaluated by design theory are practically applied to the filter construction and the simulation results are in agreement with the measured results after fine tunnings.s.s.s.s.s.