• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.223-228
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• 1996

$SiO_2$ insulator layers on InSb have been prepared by remote PECVD system a low temperature below $200^{\circ}C$. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the $SiO_2$ were studied. The InSb MIS device using $SiO_2$ was fabricated and measured its current-voltage and capacitance-voltage characteritance-voltage charateristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throughout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26nA/$\textrm{cm}^2$ at 0.75MV/cm , and the breakdown voltage was about 1MV/cm. The interface-stage density at mid-bandgap extracted from 1MHz C-V measurement was $54\times 10^{11}\textrm{cm}^2-2V^{-1}$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• Nonlinear Functional Analysis and Applications
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• v.28 no.2
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• pp.589-599
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• 2023

The object of this study is to introduce a new subclass of univalent analytic functions on the open unit disk. This subclass is created by utilizing univalent analytic functions with negative coefficients. We first explore the specific properties that functions in this subclass must possess before examining their coefficient characterization. By applying this approach, we observe several fascinating features, including coefficient approximations, growth and distortion theorems, extreme points and a demonstration of the radius of starlikeness and convexity for functions belonging to this subclass.

• Journal of Korean Society of Steel Construction
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• v.12 no.5 s.48
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• pp.503-513
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• 2000

This study treats the criteria, considering the fuzziness occurred by optimization design. And we applied two weighting methods to show the relative importance of criteria. This study develops multi-objective optimization programs implementing plain stress analysis by FEM and discrete optimization design uniformaly. The developed program performs a sample design of 10-member steel truss. This study can carry over the multi-objective optimization based on total system fuzzy-genetic algorithms while performing the stress analysis and optimization design. Especially, when general optimization with unreliable constraints is cannot be solve this study can make optimization design closed to realistic with fuzzy theory.