• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.320-324
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• 1993

The effect of sputtering conditions on magnetic properties of CoCrMo/Cr magnetic thin film was investigated. Substrate temperature were controlled from R. T to $250^{\circ}C$. The thickness changes of Cr underlayer and CoCrMo magnetic layer were in the range of $1000-2500\AA$ and $300-800\AA$, respectively. Grain size was found to be decreased with increasing magnetic layer thickness(from $500\AA$ to $800\AA$). CoCrMo magnetic layer microstructure showed relatively small dependence on Cr underlayer thickness, substrate temperature. Coercivity increased with increasing Cr underlayer, magnetic layer thickness and substrate temperature. CoCrMo/Cr thin film showed a coercivity of 880 Oe in $700\AA$ magnetic layer thickness and $1000\AA$ Cr underalyer thickness.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.05a
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• pp.186-195
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• 2001

The purpose of this study is to develop the time-dependent, one-dimensional numerical model on the interaction between irregular waves and two-layer permeable coastal structures, by extending and modifying the numerical model PBREAK(Wurjanto and Kobayashi, 1992) which is applicable only to one-layer permeable coastal structures. The two-layer permeable coastal structure consists of two permeable underlayers with different permeable media resting on an impermeable slope and an armor layer covering the permeable underlayer. The numerical model of this study simulates the wave over rough permeable underlayer of arbitrary geometry as well as the waves inside two-permeable underlayers of arbitrary thickness for specified normally-incident irregular waves. The utility of the numerical model is founded from comparing with PBREAK and the four hydraulic model tests under irregular waves. The sensitivities of computed results according to typical parameters(porosity, stone diameter, horizontal width of the permeable underlayer) and major factors(friction factor of primary armor layer etc.) discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.52-53
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.106-107
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.427-428
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.28-29
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.230-231
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.1-4
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• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.