• Korean Journal of Materials Research
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• v.16 no.8
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• pp.485-489
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• 2006

The preparation conditions of $YBO_3$:Eu phosphor particles having the maximum photoluminescence intensity under vacuum ultraviolet in the spray pyrolysis were optimized. The $YBO_3$:Eu phosphor particles prepared from spray solution with stoichiometric amount of boric acid had the maximum photoluminescence intensity. The $YBO_3$:Eu phosphor particles with pure phases were formed at low post-treatment temperatures because of fast reaction of yttrium and boron components without volatilization of boron component. The prepared $YBO_3$:Eu phosphor particles by spray pyrolysis had fine size, narrow size distribution and regular morphology. The photoluminescence intensity of the prepared $YBO_3$:Eu phosphor particles under vacuum ultraviolet was 103% of the commercial $(Y,Gd)BO_3$:Eu phosphor particles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.185-187
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• 2004

The electron concentration of ZnO thin film fabricated by pulsed laser deposition was controlled by varying oxygen gas pressure. The electron concentration of ZnO was increased from $10^{17}\;to\;10^{19}/cm^3$ as oxygen gas pressure increased from 20 mTorr to 350 mTorr. Ultraviolet(UV) intensity of photoluminescence of ZnO was controlled, too. UV intensity of ZnO was increased as oxygen gas pressure increased from 20 mTorr to 350 mTorr. The relation between electron concentration and UV intensity was investigated.

• Current Optics and Photonics
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• v.1 no.4
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• pp.284-288
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• 2017

In order to investigate the ultraviolet-excited photoluminescence properties of phosphor coatings and their relationship to thickness, Lumogen coatings with different thicknesses were deposited on quartz substrates and charge-coupled device chips by thermal evaporation. The variation of the film thickness affected the crystallite size, surface roughness and fluorescence signal. It was found that the Lumogen coating with the thickness of 420 nm has the largest luminescent signal and conversion efficiency, and the corresponding coated charge-coupled devices had the maximum quantum efficiency in the ultraviolet. These results provided one key parameter for improving the sensitivity of Lumogen coated charge-coupled devices to ultraviolet light.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.307-312
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• 2007

The films of Er-doped ZnO (ZnO:Er) were prepared onto MgO wafers by ultrasonic spray pyrolysis at $550^{\circ}C$. The concentration of Er in the deposition source varied from 0.5 wt% to 3.0 wt%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the Er concentration in the films. The films were grown as polycrystalline with a dominant direction of [002]. The grain size of the films were reduced by Er-doping. Er-doping enhanced the ultraviolet emission of ZnO:Er films. The ZnO:Er films prepared with the deposition source of 2.0 wt% Er showed the strongest ultraviolet light emission peak among the films in this study.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.496-502
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• 2005

Green-light emitting $BaMgAl_{10}O_{19}:Mn^{2+}$ (BAM:Mn) phosphor particles were prepared by spray Pyrolysis. The effect of reactor temperature and flow rate of carrier gas in the spray Pyrolysis on the morphology, crystallinity and photoluminescence characteristics under vacuum ultraviolet were investigated. The morphology of the as-Prepared Particles obtained by spray Pyrolysis had spherical shape and non-aggregation characteristics regardless of the reactor temperature. The spherical shape of the as-prepared Particles obtained by spray pyrolysis at low temperature disappeared after Post-treatment. On the other hand the as-Prepared Particles obtained by spray Pyrolysis at $1600^{\circ}C$ maintained spherical shape and non-aggregation characteristics after post-treatment at $1400^{\circ}C$ for 3 h under reducing atmosphere. The BAM:Mn Phosphor Particles Prepared by spray Pyrolysis at different reactor temperatures had pure crystal structure and high photoluminescence intensities under vacuum ultraviolet after post-treatment. BAM:Mn phosphor particles prepared by spray Pyrolysis at low How rate of carrier gas had complete spherical shape and filed morphology and high photoluminescence intensity after post-treatment under reducing atmosphere.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.262-267
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• 2003

The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.362-367
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• 2005

ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest Ultraviolet light emission peak at 18 K and 300 K among the films in this study. The annealing process increases the visible light emission, which is due to the increased oxygen vacancies.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.316-321
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• 2009

Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.77-83
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• 2008

Green-emitting $Ba_{1.468}Sr_{0.5}SiO_4\;:\;Eu_{0.012},\;Y_{0.02}$ phosphor powders under long-wavelength ultraviolet light were prepared via high-temperature flame spray pyrolysis from spray solutions with and without $NH_4Cl$ flux. The effects of the temperature of the diffusion flame and the $NH_4Cl$ flux on the morphologies, crystal structures and photoluminescence intensities of the $Ba_{1.468}Sr_{0.5}SiO_4\;:\;Eu_{0.012},\;Y_{0.02}$ phosphor powders were investigated. The phosphor powders obtained from the spray solution with the $NH_4Cl$ flux had higher photoluminescence intensities compared to phosphor powders obtained from the spray solution without the flux. The photoluminescence intensity of the phosphor powders obtained from the spray solution without the flux decreased as the flow rate of the fuel gas increased. On the other hand, the photoluminescence intensity of the phosphor powders obtained from the spray solution with the flux increased as the flow rate of the fuel gas increased. The difference of in the phase purity and morphology of the powders affected the photoluminescence intensities of the phosphor powders.