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http://dx.doi.org/10.4191/KCERS.2003.40.3.262

Growth of Heteroepitaxial ZnO Thin Film by Off-axis RF Magnetron Sputtering  

박재완 (한국과학기술연구원 박막재료연구센터, 한양대학교 재료공학과)
박종완 (한양대학교 재료공학과)
이전국 (한국과학기술연구원 박막재료연구센터)
Publication Information
Journal of the Korean Ceramic Society / v.40, no.3, 2003 , pp. 262-267 More about this Journal
Abstract
The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.
Keywords
Heteroepitaxial; ZnO; Off-axis; Photoluminescence; Ultraviolet emission;
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Times Cited By KSCI : 3  (Citation Analysis)
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