• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.253-260
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• 2012

In nowadays, the infrared optics is frequently employed to various fields such as military, aerospace, industry and medical. To develop the infrared optics, special glasses which can transmit infrared wave are required. Ge(Germanium), Si(silicon), and fluoride glasses are typically used for material of the infrared optics. Compared with Ge and Si glasses, fluoride glasses have high transmittance in infrared wavelength range. Additionally, UV(ultraviolet) and visible light can be transmitted through fluoride glasses. There characteristics of fluoride glasses makes it possible to evaluate optical performance with generally used visible testing equipment. In this paper, we used design of experiment to find ultra precision machining characteristic of Ge and fluoride glasses and optimized machining process to obtain required form accuracy of PV(Peak to Valley) $0.2\;{\mu}m$.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.695-703
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• 2020

The use of medical devices is increasing due to the development of medical technology. Among medical devices, it is often used in the human body for graft and treatment. Therefore, in medical institutions, various sterilization methods according to the type and material of medical devices are applied to prevent infection. Hydrophosphite (HA) materials are the most popular in bone grafts. We would like to present a sterilization method using Q-switch Nd:YAG laser with high output energy among non-ionizing radiation suitable for small medical devices. In this study, sterilization power was most ideally shown at UV wavelengths of 1.5 W, 266 nm, and 10 pulses. Different wavelength bands; infrared and visible light; showed passive sterilization, and ultraviolet A and C showed differences in sterilization according to the pulse. In laser sterilization were differences that found according to the wavelength bands and pulses.

• The Korean Journal of Applied Statistics
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• v.23 no.2
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• pp.295-304
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• 2010

Coating thickness is one of target variables in quality control process in steel industry. To predict coating thickness and to control quality of anti-fingerprint steel coils, ultraviolet-visible spectra are measured. We propose a variable-interval selection procedure based on the variable importance in projection in partial least square model. Using the proposed variable interval selection method, prediction performance gets better in the reduced model than the full model with full spectra absorbance. It is also shown that the first differencing as a data preprocessing technique does work well for the prediction of coating thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.237-240
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• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.246-251
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• 2010

The composite photocatalysts of a Fe-modified carbon nanotube (CNT)-$TiO_2$ were synthesized by a two-step sol-gel method at high temperature. Its chemical composition and surface properties were investigated by BET surface area, scanning electron microscope (SEM), Transmission Electron Microscope (TEM), X-ray diffraction (XRD) and ultraviolet-visible (UV-Vis) spectroscopy. The results showed that the BET surface area was improved by modification of Fe, which was related to the adsorption capacity for each composite. Interesting thin layer aggregates of nanosized $TiO_2$ were observed from TEM images, probably stabilized by the presence of CNT, and the surface and structural characterization of the samples was carried out. The XRD results showed that the Fe/CNT-$TiO_2$ composites contained a mix of anatase and rutile forms of $TiO_2$ particles when the precursor is $TiOSO_4{\cdot}xH_2O$ (TOS). An excellent photocatalytic activity of Fe/CNT-$TiO_2$ was obtained for the degradation of methylene blue (MB) under visible light irradiation. It was considered that Fe cation could be doped into the matrix of $TiO_2$, which could hinder the recombination rate of the excited electrons/holes. The photocatalytic activity of the composites was also found to depend on the presence of CNT. The synergistic effects among the Fe, CNT and $TiO_2$ components were responsible for improving the visible light photocatalytic activity.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Applied Biological Chemistry
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• v.12
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• pp.115-118
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• 1969

In a series of studies on the formation processes and chemical properties of humic substances from paddy soils the photoabsorption spectra of hymatomelanic and humic acids were recorded in the visible, ultraviolet and infrared regions. The spectra patterns of both fractions in the visible range were indicative of the decrease in optical density with the rise of wavelength and the UV-spectra showed the maximum peak at $235\;m{\mu}$, the minimum at $395\;m{\mu}$. The IR-spectra indicate a typical pattern showing a few sharp peaks in both fractions. The spectra of both fractions were compared and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.157-157
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• 2011

박막형태로 제작이 가능한 비정질 실리콘은 결정질 실리콘에 비하여 AM-1 (Air Mass 1:100mW/cm2)조건하에서 10-3 S/cm 정도의 높은 광전기전도도와 가시광선 영역($4000{\sim}7000{\AA}$)에서 약 10배의 높은 광흡수계수를 가지며, $300^{\circ}C$ 이하의 낮은 기판온도에서 다양한 기판위에 대면적으로 제작이 가능할 뿐만 아니라 제작공정이 단순하여 제작비용이 저렴하다는 이점이 있다. 본 실험에서 제작된 모든 박막은 PECVD로 증착하였으며 구조는 p-i-n superstrate형 구조를 사용하였고, 각 박막의 두께는 p-a-Si:H/i-a-SiGe:H/n-a-Si:H ($300{\AA}/2000{\AA}/600{\AA}$)으로 고정하였다. a-Si:H (hydrogenated amorphous silicon) 태양전지의 광 흡수층인 i-layer에서의 germane 가스 유량 변화(0, 20, 40. 60, 80, 100 sccm)에 대한 흡수율의 차이를 UV/Vis/Nir spectrophotometer (ultraviolet/visible/near infrared spectrophotometer)를 통해 확인하고, 그에 따른 a-Si:H 박막 태양전지를 제작하여 solar simulator를 사용하여 AM 1.5 G의 환경 조건에서 태양전지 특성을 평가하였다. 그 결과 germane 가스 유량이 증가함에 따라 파장에 대한 absorptance (a.u.)값이 증가함을 알 수 있었으며, 흡수되는 파장영역의 범위가 장파장으로 확대됨을 확인할 수 있었다. 또한 germane 가스 유량이 60 sccm 일때 a-SiGe:H 박막 태양전지 변환효율이 3.80%로 최대값을 가졌다. 실험에서 germane 가스 유량이 증가할수록 흡수율이 높아져 태양전지특성이 향상될 거라 예상 했지만, 100 sccm보다 60 sccm일 때가 단락전류밀도 값과 변환효율이 높다는 것을 확인할 수 있었다. 이는 각 layer사이에 계면상의 문제가 있을 거라 예상되며 직렬저항측정을 통해 확인할 수 있다.

• Laser Solutions
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• v.11 no.4
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• pp.29-34
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• 2008

Ultraviolet laser micromachining has increasingly been applied to the electronics industry where precision machining of high-density, multi-layer, and multi material components is in a strong demand. Due to the ever-decreasing size of electronic products such as cellular phones, MP3 players, digital cameras, etc., flexible printed circuit board (FPCB), multi-layered with polymers and metals, tends to be thicker. In present, multi-layered FPCBs are being mechanically cut with a punching die. The mechanical cutting of FPCBs causes such defects as burr on layer edges, cracks in terminals, delamination and chipping of layers. In this study, the laser cutting mechanism of FPCB was examined to solve problems related to surface debris and short-circuiting that can be caused by the photo-thermal effect. The laser cutting of PI and FCCL, which are base materials of FPCB, was carried out using a pico-second laser(355nm, 532nm) and nano-second UV laser with adjusting variables such as the average/peak power, scanning speed, cycles, gas and materials. Points which special attention should be paid are that a fast scanning speed, low repetition rate and high peak power are required for precision machining.