• 제목/요약/키워드: two transistor forward

검색결과 26건 처리시간 0.021초

Two-transistor 포워드 컨버터에서 소프트 스위칭 기법의 손실 분석 (Loss Analyses of Soft Switching Techniques for Two-transistor Forward Converter)

  • 김만고
    • 전력전자학회논문지
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    • 제6권5호
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    • pp.453-459
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    • 2001
  • 본 논문에서는 Two-transistor 포워드 컨버터에서 사용 가능한 기존의 소프트 스위칭 기법과 새로운 소프트 스위칭 기법의 손실 분석을 수행한다. 두 트랜지스터에서 발생하는 스너버 전류에 의한 트랜지스터 손실과 내부 커패시터에 의한 턴-온 손실을 유도하고, 각각의 트랜지스터에서 발생하는 전체 손실을 계산한다. 손실 계산을 통해 기존의 소프트 스위칭 기법에서는 두 트랜지스터에서 발생하는 손실이 상이함을 보이고, 새로운 소프트 스위칭 기법에서는 손실이 적으면서도 두 트랜지스터에서의 손실이 고르게 발생함을 알 수 있다. 그리하여 제안된 소프트 스위칭 스너버를 사용하여 고른 열분포와 향상된 신뢰도를 얻을 수 있음을 보인다.

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개선된 소프트 스위칭 Two-transistor forward converter (An Improved Soft Switching Two-transistor Forward Converter)

  • Kim, Marn-Go
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2000년도 전력전자학술대회 논문집
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    • pp.137-140
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    • 2000
  • This paper proposes an improved soft switching two-transistor forward converter which uses a novel lossless snubber circuit to effectively control the turn-off dv/dt rate of the main transistors. In the proposed soft switching implementation the turn-off voltage traces across the main two transistors are almost the same contributing to reduce the total capacitive turn-on loss and the snubber current is divided into the two transistors resulting in distributed thermal stresses

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위상이동 방식을 적용한 ZVZCS Interleaving Two-Transistor Forward 컨버터에 관한 연구 (A Study on the ZVZCS Interleaving Two-Transistor Forward Converter using Phase Shift Control)

  • 한경태;김용;배진용;이규훈;조규만
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.276-280
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    • 2003
  • This paper presents a zero voltage and zero current switching (ZVZCS) interleaving two-transistor forward converter for high input voltage and high power application. A phase shift has a disadvantage that a circulating current and RMS current stress, conduction losses of transformer and switching devices increases. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved interleaving two-transistor forward Zero Voltage and Zero Current Switching (ZVZCS) dc/dc converter using a tapped inductor a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 1.8kW, 5kHz experimental prototype.

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PFC와 무손실 스너버를 이용한 Two-Transistor Forward Converter의 특성해석 (Characteristics Analysis of Two-Transistor Forward Converter using PFC and Lossless Snubber Circuit)

  • 배진용;김용;백수현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.176-179
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    • 2005
  • This paper proposed the two-transistor forward circuit using PFC, lossless snubber and synchronous rectifier for low voltage and high current output. The principle of operation, feature and design considerations is illustrated and verified through the experiment with a 200W(5V, 40A) 100kHz MOSFET based experimental circuit.

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동기정류기를 이용한 Two Transistor Forward 컨버터에 관한 연구 (A Study on the Two Transistor Forward Converter using Synchronous Rectifier)

  • 배진용;김용;권순도;이규훈;조규만
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 B
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    • pp.1163-1165
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    • 2003
  • This paper presents the TTFC(Two Transistor Forward Converter) using Synchronous Rectifier. The principle of operation, feature ana design considerations are illustrated and verified through the experiment with a 200W 100kHz MOSFET based experimental circuit.

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Two transistor 포워드 DC-DC 컨버터의 효율 특성에 관한 연구 (A study on the efficiency characteristics for two transistor Forward DC-DC converter)

  • 안태영;이광택
    • 전력전자학회논문지
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    • 제12권1호
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    • pp.50-55
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    • 2007
  • 본 논문에서는 Two transistor forward(TTF) DC-DC 컨버터의 회로방식에 대한 전력변환 효율특성을 빠르고 효과적인 분석 방법에 대해 보고한 것이다. TTF 컨버터의 회로 구성 소자 중에서 내부 기생저항만을 고려한 등가회로를 유도하고 이상적인 동작 파형을 이용하여 전류의 실효값과 전도손실을 유도하였다. 해석을 간단하게 하기위해서 정상상태 결과로부터 코어 손실은 무시하였으며, 다이오드의 손실과 전도손실 만을 고려하였다. 해석결과의 타당성을 검토하기 위해서 시험용 TTF 컨버터를 구성하여 검증하였다. 입력전압 390V, 출력전압 12V, 최대전력 480W의 조건에서 실험결과와 해석결과와 비교적 잘 일치한다는 것을 본 논문에서 확인 하였다.

단일전력단 고역률 TTFC(Two-Transistor Forward Converter) (Single-Stage High Power Factor TTFC(Two-Transistor Forward Converter))

  • 배진용;김용;김필수;이은영;권순도
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.226-228
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    • 2005
  • This paper presents the single-stage High Power Factor TTFC(Two-Transistor Forward Converter). Recently, due to growing concern about the harmonic pollution of power distribution systems and the adoption of standards such as ICE 61000-3-2 and IEEE 519, There is a need to reduce the harmonic contests of AC line currents of power supplies. This research proposed the single-stage two switch forward circuit for low voltage and high current output.

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단일전력단 AC/DC PFC TTFC(Two-Transistor Forward Converter)에 관한 연구 (A Study on the Single-Stage AC/DC PFC TTFC(TWO-Transistor Forward Converter))

  • 배진용;김용;김필수;조규만;최근수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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    • pp.1432-1434
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    • 2005
  • Single-stage converters are simpler and less expensive than convention two-stage converters. It can be a challenge, however, to design single-stage converters to satisfy certain key criteria such as input power factor, primary-side do bus voltage, and output voltage ripple. This is especially true for higher power single-stage AC/DC TTFC(Two-Transistor Forward Converter).

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동기정류기 강제구동 방식을 이용한 TTFC의 효율 향상에 관한 연구 (A Study on the Efficiency Improvement of TTFC(Two Transistor Forward Converter) using Synchronous Rectifier of Compulsory Control-driver)

  • 배진용;김용;이은영;권순도;한경태;한대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.166-170
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    • 2003
  • This paper presents the TTFC(Two Transistor Forward Converter) using Synchronous Rectifier of Compulsory Control-driver. The two transistor forward circuit is used to decrease voltage stress of primary side and the synchronous rectifier is used to reduce current stress of secondary side. Previous synchronous rectifier's MOSFET of TTFC have long dead time This paper presents synchronous rectifier of compulsory control-driver for minimized dead time. This paper compared with diode rectifier, self-driven synchronous rectifier and compulsory control-driver synchronous rectifier of TTFC. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 200W 100kHz MOSFET based experimental circuit.

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트렌치 산화막을 갖는 정전유도트랜지스터의 전기적 특성에 관한 연구 (A Study on the Electrical Characteristics in the Static Induction Transistor with Trench Oxide)

  • 강이구;김제윤;홍승우;성만영
    • 한국전기전자재료학회논문지
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    • 제18권1호
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    • pp.6-11
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    • 2005
  • In this paper, two types of vertical SIT(Static Induction Transistor) structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. First, a trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. Second, a trench gate-source region power SIT device is proposed to obtain more higher forward blocking voltage and forward blocking characteristics at the same size. The two proposed devices have superior electrical characteristics when compared to conventional device. In the proposed trench gate oxide power SIT, the forward blocking voltage is considerably improved by using the vertical trench oxide and the forward blocking voltage is 1.5 times better than that of the conventional vertical power SIT. In the proposed trench gate-source oxide power SIT, it has considerable improvement in forward blocking characteristics which shows 1500V forward blocking voltage at -10V of the gate voltage. Consequently, the proposed trench oxide power SIT has the superior stability and electrical characteristics than the conventional power SIT.