• Progress in Superconductivity
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• v.11 no.2
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• pp.118-122
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• 2010

Electrical transport properties were measured on $SmFeAsO_{0.85}$ single crystals along the c-axis for various temperatures and magnetic fields. For the measurements a mesa structure was fabricated on the surface of the single crystals. Samples showed a metallic temperature dependence of resistance and current-voltage curves without hysteretic multiple branch splitting that is usually observed in tunneling Josephson junctions. In addition, in ab-planar magnetic fields, samples did not show the Fraunhofer-type field modulation of the critical current. All these features indicate that the c-axis transport characteristics of $SmFeAsO_{0.85}$ single crystals are explained by the anisotropic bulk superconductivity rather than Josephson tunneling.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.114-114
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• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.51-57
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• 1995

The theoretical analysis for AlInAs/GaInAs resonant tunneling diodes (RTDs), which have shown the improved negative differential resistance (NDR) characteristics, has scarcely been made in comparison with AlGaAS/GaAs RTDs. In this paper, the static current-voltage relation of Al$_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$As RTDs were numerically estimated by using a self-consistent method. Assuming a simplified RTD with single quantum well structure and spacer layers, the peak current density (J$_{P}$) and the peak-to-valley current ratio (PVCR) were analysed as the function of the thickness of the well, the barrier and the spacer layer, and temperature. As the results, the peak current density and the peak-to-valley current ratio indicated a reciprocal relation roughly in respect to the thicknesses of the well and the barrier, and it was theoretically predicted that it be not attainable to provide a high peak current desity (J$_{P}$) over 1${\times}10^{5}A/cm^{2}$ as well as the large peak-to-valley current ratio (PVCR) over 10 that were the the critical conditions for the practical use.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.245-250
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• 1999

The effect of substrate and oxidization time on $substrate /Py/Al_2O_3/Co\;(Py=Ni_{81}Fe_{19})$ tunnel junction was studied. Samples were prepared without breaking vacuum by changing shadow masks in-situ. The resistance of tunnel junctions increased, but measured MR decreased with oxidization time. Negative MR observed for samples of tunnel resistivity lower than 0.17 M$\Omega$ $({\mu}m)^2$. MR resistivity decreased with the change of substrates in the order of thermally oxidized Si(111), Si(100), Coring Glass 2948, Corning Glass 7059. Sign change and the variation of MR was explained with non uniform current effect.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.111-114
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• 2005

Organic monolayers were fabricated onto Au(l l l) substrate by self-assembly method using dipyridinium. Also, organic single molecule in the organic monolayers was selected to measure the current-voltage (I-V) curves by using the ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The organic molecule used in the experiment was dipyridinium dithioacetate, which contains thiol functional group and can be self-assembled easily onto Au(l l l) substrate. The concentration of dipyridinium dithioacetate for self-assembly procedure was I [mM/L]. To confirm the formation of self-assembled mono layers (SAMs), the differences of thickness of the self-assembled organic monolayers were observed by using an ellipsometer, and the morphology and I-V curves of the SAMs were investigated by using UHV-STM. The applied voltages were from -2 [V] to +2 [V], temperature was 300 [K]. The vacuum for measuring current of the organic single molecule was 6 $\times$ 10$^{-8}$ [Torr]. As a result, properties of the negative differential resistance (NDR) in constant voltage were found.

• Journal of Ocean Engineering and Technology
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• v.15 no.3
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• pp.75-80
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• 2001

The elastic plastic fracture toughness of this material is evaluated by the an unloading compliance method according to the ASTM E813-97 and E1152-97 method on the smooth and side groove 1CT specimens. The effect of smooth and side groove is studied on the material tearing modulus and characterizes the crack tip field under the plane stress and strain. SG-365 steel is observed that J-R curve and Tmat value decrease as 0%, 20%, 30%, and 40%. The 40% side grooved specimen is very useful in estimation of the $J_IC$. Because it is much easier than the smooth specimen to the onset of the ductile tearing by the R curve method. Besides. it improves the accuracy of toughness values, decreases the scattering the them and tunneling and shear lip by the side groove. Applicability of tearing modulus($T_J$ proposed by paris et al as instability panameter for this material is investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.688-693
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• 2001

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

• ETRI Journal
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• v.26 no.6
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• pp.669-672
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• 2004

To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters $C_g=C_T=C_{clk}=1\;aF,\;R_T=5\;M{\Omega},\;V_{clk}=40\;mV$, and $V_{in}=20\;mV$. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.494-498
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• 2001

Ferromagnets(FM)-Al-$O_{x}$ -Ferromagnets (FM) tunneling junctions were evaluated by changing the fabricating conditions of an Al-X$/_{x}$ layer. The junction composed of a thicker Al-$O_{x}$ shows the low resistance and the stable MR ratio about 16% in a wide range of oxidation time. For the junctions with the thinner Al-$O_{x}$ , they showed a fast increase of the barrier width as an increase of an oxidation time and exhibited a strong bias dependence. As oxidation time increased, the coercivity ($H_{c}$ ) of bottom Co layer increased gradually due to the local oxidation of Co bottom layer at a interface. However, the small formation of Co oxide did not largely influence on the deterioration of MR ratio.

• Corrosion Science and Technology
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• v.3 no.2
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• pp.67-71
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• 2004

Galvanized Steel pipes have been widely used in industries and apartments, Unexpected early leakage has been found in an apartment. Tunneling corrosion or penetration was found in the water supply pipes. The chemical compositions of the pipes and properties of coating layer were evaluated. The pipes met the specification of KS D 3507. The cause of early failure was analyzed through the examination of macrostructures and microstructures, It was found that the pipes were failed by grooving corrosion, which resulted from galvanic corrosion of weld bead and matrix.