• Geomechanics and Engineering
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• 제28권4호
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• pp.359-374
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• 2022

Geology conditions are crucial in decision-making during the planning and design phase of a tunnel project. Estimation of the geology conditions of road tunnels is subject to significant uncertainties. In this work, the effectiveness of a novel regression method in estimating geological or geotechnical parameters of road tunnel projects was explored. This method, called Gaussian process regression (GPR), formulates the learning of the regressor within a Bayesian framework. The GPR model was trained with data of old tunnel projects. To verify its feasibility, the GPR technique was applied to a road tunnel to predict the state of three geological/geomechanical parameters of Rock Mass Rating (RMR), Rock Structure Rating (RSR) and Q-value. Finally, in order to validate the GPR approach, the forecasted results were compared to the field-observed results. From this comparison, it was concluded that, the GPR is presented very good predictions. The R-squared values between the predicted results of the GPR vs. field-observed results for the RMR, RSR and Q-value were obtained equal to 0.8581, 0.8148 and 0.8788, respectively.

• Geomechanics and Engineering
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• 제37권3호
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• pp.197-211
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• 2024

This research studies the effect of geotechnical factors on EPB-TBM performance parameters. The modeling was performed using simple and multivariate linear regression methods, artificial neural networks (ANNs), and Sugeno fuzzy logic (SFL) algorithm. In ANN, 80% of the data were randomly allocated to training and 20% to network testing. Meanwhile, in the SFL algorithm, 75% of the data were used for training and 25% for testing. The coefficient of determination (R²) obtained between the observed and estimated values in this model for the thrust force and cutterhead torque was 0.19 and 0.52, respectively. The results showed that the SFL outperformed the other models in predicting the target parameters. In this method, the R² obtained between observed and predicted values for thrust force and cutterhead torque is 0.73 and 0.63, respectively. The sensitivity analysis results show that the internal friction angle (φ) and standard penetration number (SPT) have the greatest impact on thrust force. Also, earth pressure and overburden thickness have the highest effect on cutterhead torque.

• Geomechanics and Engineering
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• 제37권3호
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• pp.213-222
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• 2024

Determination of jointed rock mass properties plays a significant role in the design and construction of underground structures such as tunneling and mining. Rock mass classification systems such as Rock Mass Rating (RMR), Rock Mass Index (RMi), Rock Mass Quality (Q), and deformation modulus (Em) are determined from the jointed rock masses. However, parameters of jointed rock masses can be affected by the tunnel depth below the surface due to the effect of the in situ stresses. In addition, the geomechanical properties of rocks change due to the effect of metamorphism. Therefore, the main objective of this study is to apply correlation analysis to investigate the relationships between rock mass properties and some parameters related to the depth of the tunnel studied. For this purpose, the field work consisted of determining rock mass parameters in a tunnel alignment (~7.1 km) at varying depths from 21 m to 431 m below ground surface. At the same excavation depths, thirty-seven rock types were also sampled and tested in the laboratory. Correlations were made between vertical stress and depth, horizontal/vertical stress ratio (k) and depth, k and Em, k and RMi, k and point load index (PLI), k and Brazilian tensile strength (BTS), Em and uniaxial compressive strength (UCS), UCS and PLI, UCS and BTS. Relationships were significant (significance level=0.000) at the confidence interval of 95% (r = 0.77-0.88) between the data pairs for the rocks taken from depths greater than 166 m where the ratio of horizontal to vertical stress is between 0.6 and 1.2. The in-situ stress parameters affected rock mass properties as well as metamorphism which affected the geomechanical properties of rock materials by affecting the behavior of minerals and textures within rocks. This study revealed that in-situ stress parameters and metamorphism should be reviewed when tunnel studies are carried out.

• 한국터널지하공간학회 논문집
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• 제8권3호
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• pp.249-257
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• 2006

지반 설계 인자는 공간적으로 분포하는 특성이 있으며, 이는 터널의 설계와 시공과정 뿐만 아니라 장기 거동에 큰 영향을 미친다. 그러나 일반적으로 터널의 수치해석을 위한 설계 지반 인자는 대상 영역을 대표하는 값 또는 대상 영역의 광역적 평균값 등이 적용되고 있다. 특히, 지하공간의 크기가 증가할수록 설계 지반 인자의 불확실성 및 공간적 분포 또한 증가한다. 결국 이러한 불확실성과 공간적 분포 특성의 확대는 해석의 정확성 및 신뢰성 저하를 초래하게 된다. 따라서, 대형 터널의 구조적 안정성을 확보하기위해 지반 물성치들의 공간적인 분포에 대한 정량적인 조사가 설계시 포함되어야 한다. 본 연구에서는 지반 물성치 및 구조적 설계 인자의 공간적 분포가 터널의 변위에 미칠 수 있는 영향을 분석하였다. 여러 COV(Coefficient of Variation)에 따라 정규분포하는 지반 물성치의 공간적 특성이 이상화된 원형 터널의 변위에 미치는 영향에 대한 분석과, NATM(New Austrian Tunneling Method) 터널에서 숏크리트의 강도의 공간적 분포가 터널 변위에 미치는 영향을 분석하였다. 공간적 분포의 COV가 증가할수록 터널 주변 발생하는 변위량도 증가하는 것으로 나타났으며, 분석 결과 이들은 지반 물성치에 따라 고유한 계수를 갖는 삼차방정식으로 표현된다.

• Journal of information and communication convergence engineering
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• 제14권2호
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• pp.115-121
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• 2016

Currently there is a lack of literature on SPICE-level models of double-gate (DG) tunnel field-effect transistors (TFETs). A DG TFET compact model is presented in this work that is used to develop a SPICE model for DG TFETs implemented with Verilog-A language. The compact modeling approach presented in this work integrates several issues in previously published compact models including ambiguity about the use of tunneling parameters A_k and B_k, and the use of a universal equation for calculating the surface potential of DG TFETs in all regimes of operation to deliver a general SPICE modeling procedure for DG TFETs. The SPICE model of DG TFET captures the drain current-gate voltage (I_ds-V_gs) characteristics of DG TFET reasonably well and offers a definite computational advantage over TCAD. The general SPICE modeling procedure presented here could be used to develop SPICE models for any combination of structural parameters of DG TFETs.

• 전자공학회논문지A
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• 제33A권4호
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• pp.121-128
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• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

• Geomechanics and Engineering
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• 제28권2호
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• pp.145-155
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• 2022

Safety is a most important parameters in underground railway transportation; Also stability of underground tunnel is very important in tunneling engineering. Design of a reliable support system requires an evaluation of both ground demand and support capacity. Iran's traditional railway tunnels are mainly supported with masonry structures or unsupported in high quality rock masses. A decrease in rock mass quality due to changes in groundwater regime creep and fatigue in rock and similar phenomena causes tunnel safety to decrease during time. The case study is an old tunnel in Iran, called "Keshvar"; it is more than 50 years old railway organization. In operating this Tunnel, until the several problems came up based on stability and leaking water. The goal of study is evaluation of the various reinforcement systems for supporting of the tunnel. The optimal selection of the reinforcement system is examined using TOPSIS Fuzzy method in light of the looming and available uncertainties. Several factors such as; the tunnel span, maintenance, drainage, sealing, ventilation, cost and safety were based to choose the method and system of designing. Therefore, by identifying these parameters, an optimal reinforcement system was selected and introduced. Based on optimization system for analysis, it is revealed that the systematic rock bolts and shotcrete protection had a most appropriate result for these kind of tunnel in Iran.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 춘계학술대회
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• pp.688-690
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• 2017

항복전압의 감소는 채널길이 감소에 의하여 발생하는 심각한 단채널 효과이다. 트랜지스터 동작 중에 발생하는 단채널 효과는 트랜지스터의 동작범위를 감소시키는 문제를 발생시킨다. 본 논문에서는 10 nm 이하 채널길이를 갖는 이중게이트 MOSFET에서 채널크기의 변화를 파라미터로 하여 채널도핑에 따른 항복전압의 변화를 고찰하였다. 이를 위하여 해석학적 전위분포에 의한 열방사 전류와 터널링 전류를 구하고 두 성분의 합으로 구성된 드레인 전류가 $10{\mu}A$가 될 때, 드레인 전압을 항복전압으로 정의하였다. 결과적으로 채널 도핑농도가 증가할수록 항복전압은 크게 증가하였다. 채널길이가 감소하면서 항복전압이 크게 감소하였으며 이를 해결하기 위하여 실리콘 두께 및 산화막 두께를 매우 작게 유지하여야만 한다는 것을 알 수 있었다. 특히 터널링 전류의 구성비가 증가할수록 항복전압이 증가하는 것을 관찰하였다.