• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.197-200
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• 2005

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8-hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting layer. We manufactured reference structure that has in $ITO/TPD/Alq_3/Al$. Buffer layer effects were compared to reference structure. And we have analyzed out electrical conduction mechanism in $ITO/Alq_3/Al$ device with various temperature.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.1-8
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• 2004

두께가 3nm인 게이트 산화막을 사용한 n-MOSFET에 정전압 스트레스를 가하였을 때 관찰되는 SILC 및 soft breakdown 열화 및 이러한 열화가 소자 특성에 미치는 영향에 대해 실험하였다. 열화 현상은 인가되는 게이트 전압의 극성에 따라 그 특성이 다르게 나타났다. 게이트 전압이 (-)일 때 열화는 계면 및 산화막내 전하 결함에 의해 발생되었지만, 게이트 전압이 (＋)일 때는 열화는 주로 계면 결함에 의해 발생되었다. 또한 이러한 결함의 생성은 Si-H 결합의 파괴에 의해 발생할 수 있다는 것을 중수소 열처리 및 추가 수소 열처리 실험으로부터 발견하였다. OFF 전류 및 여러 가지 MOSFET의 전기적 특성의 변화는 관찰된 결함 전하(charge-trapping)의 생성과 직접적인 관련이 있다. 그러므로 실험 결과들로부터 게이트 산화막으로 터널링되는 전자나 정공에 의한 Si 및 O의 결합 파괴가 게이트 산화막 열화의 원인이 된다고 판단된다. 이러한 물리적 해석은 기존의 Anode-Hole Injection 모델과 Hydrogen-Released 모델의 내용을 모두 포함하게 된다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2000년도 연약지반처리위원회 학술세미나
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• pp.1-11
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• 2000

The use of Compaction Grouting evolved in 1950's to correct structural settlement of buildings. Over the almost 50 years, the technology has been developed and is currently used in wide range of applications. Compaction Grouting, the injection of a very stiff, 'zero-slump' mortar grout under relatively high pressure, displaces and compacts soils. It can effectively repair natural or man-made soil strength deficiencies in variety of soil formations. Major applications of Compaction Grouting include densifying loose soils or fill voids caused by sinkholes, poorly compacted fills, broken utilities, improper dewatering, or soft ground tunneling excavation. Other applications include preventing liquefation, re-leveling settled structures, and using compaction grout bulbs as structural elements of minipiles or underpinning. In this paper, on the basis of the case history constructed in this year, a study has been performed to analyze the basic mechanism of the Compaction Grouting. Also, the effectiveness of the ground improvement and the bearing capacity of the Compaction Pile has been verified by the Cone Penetration Test(CPT) and Load Test. Relatively uniform Compaction grouting column could be maintained by planning the Quality Control in the course of grouting. And, the Quality Control Plan has been conceived using grout pressure, volume of grout and drilling depth.

• Journal of Advanced Marine Engineering and Technology
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• 제33권8호
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• pp.1187-1195
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• 2009

본 논문은 완전 혼화조를 이용한 폐수처리 공정의 응집특성에 대한 연구를 목적으로 한다. 완전 혼화조 시스템은 유체 저장조, 임펠러가 장착된 3단의 혼화 및 응집부, 응집보조제 및 응집제 주입부, 응집 침전조 그리고 제어부로 구성된다. 실험용 폐수는 터널 공사현장에서 폐수 슬러지를 수거하여 약 1,000NTU의 탁도를 갖도록 만들었다. 응집보조제의 주입량이 증가함에 따라 약 99% 정도까지 탁도 제거율이 증가하였으며, 응집제의 주입량이 일정한 범위 이상으로 증가하면 탁도 제거율이 감소하는 것을 알 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.280-280
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• 2013

Using both experimentaland theoretical methods, we have investigated the structural and electronic properties of self-assembled two-dimensional organic molecule (hexaaza-triphenylene-hexacarbonitrile, HATCN), which is used as an efficient OLED hole injection material, on Au(111) surfaces. Low-temperature scanning tunneling microscope (STM) measurements revealed that self-assembled linear and hexagonal porous structures are formed at atomic steps and terraces of Au(111), respectively. We also found that the hexagonal porous structure have chirality and forms only small (＜1,000 nm2) phase-separated chiral domains that can easily change their chiral phase in subsequence STM images at 80 K. To explain these observations, we calculated the molecular-molecular and molecule-surface interaction energies by using first-principles density functional theory method. We found that the change of their chiral phase resulted from the competition between the two energies. These results have not only verified our experimental observations, but also revealed the delicate balance between different interactions that caused the self-assembed structures at the surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.534-537
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• 2002

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

• 한국철도학회논문집
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• 제2권4호
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• pp.9-19
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• 1999

The use of compaction grouting evolved in 1950's to correct structural settlement of buildings. Over the almost 50 years, the technology has been developed and is currently used in wide range of applications. Compaction grouting, the injection of a very stiff, 'zero-slump' mortar grout under relatively high pressure, displaces and compacts soils. It can effectively repair natural or man-made soil strength deficiencies in variety of soil formations. Major applications of compaction grouting include densifying loose soils or fill voids caused by sinkholes, poorly compacted fills, broken utilities, improper dewatering, or soft ground tunneling excavation. Other applications include preventing liquefaction, re-leveling settled structures, and using compaction grout bulbs as structural elements of minipiles or underpinning. In this paper, on the basis of the case history constructed in this year, a study has been performed to analyze the basic mechanism of the compaction grouting. Also, the effectiveness of the ground improvement and the bearing capacity of the compaction pile has been verified by the Cone Penetration Test(CPT) and Load Test. Relatively uniform compaction grouting column could be maintained by planning the quality control in the course of grouting. And, the Qualify Control Plan has been conceived using grout pressure, volume of grout and drilling depth.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.457-465
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• 2014

Size-controlled lead sulfide (PbS) quantum dots were synthesized by the typical hot injection method using oleic acid (OA) as the stabilizing agent. Subsequently, the ligand exchange reaction between OA and thioacetic acid (TAA) was employed to obtain TAA-capped PbS quantum dots (PbS-TAA QDs). The condensation reaction of the TAA ligands on the surfaces of the QDs enhanced the conductivity of the PbS-TAA QDs thin films by about 2-4 orders of magnitude, as compared with that of the PbS-OA QDs thin films. The electron transport mechanism of the PbS-TAA QDs thin films was investigated by current-voltage (I-V) measurements at different temperatures in the range of 293 K-473 K. We found that the charge transport was due to sequential tunneling of charge carriers via the QDs, resulting in the thermally activated hopping process of Arrhenius behavior.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.75-78
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• 1998

The SONOSFET Shows low operation voltage, high cell density, anti good endurance due to modified Fowler-Nordheim tunneling as memory charge injection method. In this paper, therefore, the NOR-type Flash EEPROM composed of SONOSFET, which has fast lead operation speed and Random Access characteristics, is proposed. An 8${\times}$8 bit NOR-type SONOSFET Flash EEPROM had been designed and its electrical characteristics were verified. Read/Write/Erase operations of it were verified with the spice parameters of SONOSFETs which had Oxide-Nitride-Oxide thickness of 65${\AA}$-165${\AA}$-35${\AA}$ and that of scaled down as 33${\AA}$-53${\AA}$-22${\AA}$, respectively. When the memory window of the scaled-down SONOSFET with 8V operation was similar to that of the SONOSFET with 13V operation, the Read operation delay times of the scaled-down SONOSFET were 25.4ns at erase state and 32.6ns at program state, respectively, and those of the SONOSFET were 23.5ns at erase state and 28.2ns at program state, respectively.