• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.17-27
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• 2000

This paper presents deposition and characterization of hydrogenated microcrystalline silicon (${\mu}c$ -Si:H) films on low cost glass substrate by Hot Wire CVD(HWCVD). The HWCVD ${\mu}c$ -Si:H films had deposition rates ranging from 2${\AA}$/sec to 35${\AA}$/sec with the variations of preparation conditions, which was 10 times higher than that of the films obtained from the conventional PECVD method. From the Raman spectroscopy, the prepared silicon films were found to be composed of the mixture of crystalline and amorphous phases. The crystalline volume fraction and average crystallite size, obtained from the Raman To mode peak near 520cm$^{-1}$, were 37-63% and 6-10 nm, respectively. The conductivity activation energy($E_a$) of the ${\mu}c$ -Si:H films, representing the difference of conduction band and Fermi level in an intrinsic semiconductors, increased from 0.22eV to 0.68eV with increasing pressure from 30mTorr to 300mTorr. The increase of $E_a$ with pressure indicates that the deposited films have properties close to intrinsic semiconductors, which is also proved with low dark conductivity of the ${\mu}c$ -Si:H deposited at 300mTorr. The tungsten concentration incorporated into films was about $6{\times}10^{16}atoms/cm^3$ in the samples prepared at wire temperature of 1800$^{\circ}C$.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1994.11a
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• pp.21-26
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• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Transactions of the Korean Society of Mechanical Engineers
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• v.8 no.5
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• pp.442-449
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• 1984

Turbulent jet flow has been studied in many ways; a plane jet, a rectangular jet, an annular jet, a round jet, a wall jet, a parallel jet, a valve jet, a cross jet, a slit jet and etc. In this report, a 45.deg. cross jet flow was tried by using two same dimensioned nozzels(dia..phi.20)which were set up at the exit of the subsonic wind tunnel. Each jet flows to the direction of 22.5.deg. to the axis of downstream of the mixed flow. The centerline of each jet meets at the distance of 217.3mm and their mixing flow could be imagined to develop beyond that distance, so the measurement was effectuated at X/X$_{0}$=1.2-1.5. The section of the mixed flow a elliptic circle which is formed by the 22.5.deg. inclined flows to the X direction. This experimental study aimed at the investigation of the turbulent mixing process of two jets; the mean velocities, the turbulent shear stresses, the correlation coefficients, and the momentum were respectively measured. The mean velocity distribution profiles of the down-stream component measured in the Y direction coincide well with the empirical equation of Gortler and those measured in the Z direction agree with the equation of H. Schlichting. Other mean velocities V over bar and W over bar components were randomly distributed. The higher values with same order of the intensity of turbulence were largely distributed at the central part of the flow. The momentum was decreased up to 70% by the shock losses and the development of intense turbulences, but it kept its value constantly beyond X/d=14. Two-channel hot-wire anemometer systems (model 1050 series), X-type hot-wire made of tungsten (dia. .phi.e.mu.m, long 3mm, model 0252 T5), a computer(model HP 9845B0, and a plotter (model HP 9872C) were used for the experiments and the analyses.s.

• Journal of the Korean Society of Radiology
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• v.4 no.1
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• pp.19-24
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• 2010

A cone-beam computed tomography (CT) system for a small animal has been widely used in the bio-medical application. This paper introduced simple methods for evaluating a cone-beam CT system using a simple tungsten wire phantom of 10{$\mu}m$ diameter and a water phantom. Slice images and three-dimensional tomography images were obtained through 360 projection views per one sample rotation under stable X-ray tube conditions for a long running time. The cone-beam CT system at a position of a 1.07 magnification showed a spatial frequency of 13.78 lp/mm ($36.2{\mu}m$ spatial resolution) and gave a CNR of 10.33 and a S/N of 5.87 under a tube voltage of 80kV.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.205.2-205.2
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• 2016

The emission test a domestic fabricated cathode is conducted using an easy-replaceable-emitter-type test bench. A simple cylindrical button type cathode is dropped vertically into a cathode cup holder. The cathode is heated by a tungsten wire heater located around the cup holder. The cathode temperature is measured by an optical pyrometer. A high voltage pulse power supply gives the anode-cathode gap voltage up to 20 kV with the pulse width of 15 us. The emitted current from the cathode is captured at a faraday cup and is measured using current transformer and oscilloscope. The test bench is installed in the vacuum chamber with easy access door and, therefore, the cathode can be easily replaceable. We confirmed the emission current density of $15A/cm^2$ and $80A/cm^2$ with a domestic fabricated B-type cathode and a Scandate cathode, respectively. The detailed test result for the cathode will be presented.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.8
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• pp.47-54
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• 2009

In this study, a simple and effective method was proposed to minimize electrolytic corrosion on the workpiece during ED-drilling using water as a working fluid. The adhesion of a cover plate onto the surface of the workpiece was greatly effective for suppressing electrolytic corrosion during ED-drilling. The experiment revealed that the adhesion of the cover plate prevented corrosion without causing significant changes in machining characteristics. Using the machining method proposed in this paper, electrolytic-corrosion-free holes can be machined without change in the machinery system. By using corrosion-free hole as a start hole for wire EDM, a lead frame die with high quality was fabricated successfully.

• Journal of Welding and Joining
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• v.33 no.1
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• pp.41-48
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• 2015

In this study, the effect of heat input on weld metal microstructure and the effects of dissimilar weld heat affected zone in quenched and tempered ASTM A517 on the stainless steel AISI 316L is investigated through the optimization of welding parameters. For this purpose, two welding techniques are used, tungsten-conventional gas and pulsed gas with weld wire ER 309MoL with Diameter 2.4 mm. Research showed that the grain size of the heat affected zone in pulsed welding is less compared with conventional welding; weld metal structure is fully austenitic, it has a finer structure in the pulsed method. Additionally, the growth of weld metal adjacent steel A517 is different from steel 316L. Further, investigation showed that the rate of dilution is less in the pulsed method and the impact energy is increased in each three regions of the weld metal and heat affected zones in the pulsed method; the fracture in the weld metal and heat affected zone of steel 316L is quite soft and it is semi-crispy in the heat affected zone of steel A517.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.