• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.239.2-239.2
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• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.169-172
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• 2008

We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

• 통합자연과학논문집
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• 제3권3호
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• pp.168-173
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• 2010

Novel porous silicon chip exhibiting dual optical properties, both Frbry-Perot fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type sillicon wafer (boron-doped, <100> orientation, resistivity 1 - 10 ${\Omega}$). The ething solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF (48% by weight). The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Ething was carried out as a two-electrode Kithley 2420 preocedure at an anodic current. The surface of porous silicon was characterized by FT-IR instrument. The porosity of samples was about 80%. Three different types of porous silicon, fresh porous silicon (Si-H termianated), oxidized porous silicon (Si-OH terminated), and surface-derivatized porous silicon (Si-R terminated), were prepared by the thermal oxidation and hydrosilylation. Then the samples were exposed to the wapor of various organics vapors. such as chloroform, hexane, methanol, benzene, isopropanol, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic wapors.

• 통합자연과학논문집
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• 제3권3호
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• 한국재료학회지
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• 제8권1호
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• pp.80-84
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• 1998

본 연구에서는 석영을 기판으로 사용하여 텅스텐 실리사이드 게이트를 고온에서 결정화시키고, 이\ulcorner 발생되는 crack 에 대한 생성원인을 조사하였다. 증착된 텅스텐실리사이드의 실리콘 조성과 실리콘 완층충의 두께가 증가함에 따라 열응력이 감소하는 경향이 관찰되었으며, 과잉의 실리콘 조성을 가진 실리사이드를 열처리한 경우에는 crack에 대한 저항이 증가함을 알 수 있었다. 그러나 실리콘 완충층을 사용한 경우는 두께가 증가함에 따라 열응력이 감소하는 경향이 있으나, crack이 보다 쉽게 발생되는 결과를 얻었다. 이는 실리사이드 반응에 의하여 거칠어진 계면에 응력이 집중되어 crack생성을 쉽게하는 것으로 여겨진다. 결과적으로 석영과 텅스텐실리사이드의 열\ulcorner창계수차이에 의하여 생성되는 열응력이 crack생성의 주원인으로 작용하고, 실리콘 완층층을 사용한 구조하에서는 계면에서 일어나는 실리사이드반응이 crack생성에 큰 영향을 미치는 것으로 생각된다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년 추계학술발표대회 개요집
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• pp.63-65
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• 2006

The paper deals with the effect of hydrogen or helium in argon as a shielding gas on GTA welding of austenitic stainless steel. The studies were carried out in GTA(Gas Tungsten Arc) welding with a non-consumable electrode in case with different volume additions of hydrogen or helium to the argon shielding gas, i.e $5%H_2,\;10%H_2$, 30%He and 67%He. The penetration, welding voltage, microstructure and mechanical property were examined. The deepest penetration was obtained from the sample which was welded under shielding gas of $10%H_2$. The studies showed that hydrogen or helium addition to argon changes the static characteristic of the welding arc. The hydrogen or helium addition to argon increases arc power and the quantity of the material melted. The weld metal penetration depth and its width increased with increasing hydrogen or helium content. Additionally, welding voltage increased with increasing hydrogen or helium content.

• Nuclear Engineering and Technology
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• 제33권2호
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• pp.175-183
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• 2001

Various welding processes are now available for end cap closure of nuclear fuel element such as TG(Tungsten Inert Gas) welding, magnetic resistance welding and laser welding. Even though the resistance and TIG welding processes are widely used for manufacturing commercial fuel elements, they can not be recommended for the remote seal welding of a fuel element at a hot cell facility due to the complexity of electrode alignment, difficulity in the replacement of parts in the remote manner and a large heat input for a thin sheath. Therefore, the Nd:YAG laser system using optical fiber transmission was selected for Zircaloy-4 end cap welding inside hot cell. The laser welding apparatus was developed using a pulsed Nd:YAG laser of 500 watt average power with optical fiber transmission. The weldability of laser welding was satisfactory with respect to the microstructures and mechanical properties comparing with TIG and resistance welding. The optimum operation processes of laser welding and the optical fiber transmission system for hot cell operation in a remote manner have been developed The effects of irradiation on the properties of the laser apparatus were also being studied.

• International Journal of Precision Engineering and Manufacturing
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• 제9권4호
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• pp.74-78
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• 2008

High-speed tool steels are extensively used in tooling industries for manufacturing cutting tools, forming tools, and rolls. Electrical discharge machining (EDM) has been found to be an effective process for machining these extremely hard and difficult-to-cut materials. Extensive research has been conducted to identify the optimum machining parameters for EDM with different tool steels. This paper presents a fundamental study of the surface characteristics of SKH-51 tool steel machined by micro-EDM, with particular focus on obtaining a better surface finish. An RC pulse generator was used to obtain a better surface finish as it produces fine discharge craters. The main operating parameters studied were the gap voltage and the capacitance while the resistance and other gap control parameters were kept constant. A negative tungsten electrode was used in this study. The micro-EDM performance was analyzed by atomic force microscopy to determine the average surface roughness and the distance between the highest peak and lowest valley. The topography of the machined surface was observed using a scanning electron microscope and a digital optical microscope.

• 한국가스학회지
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• 제1권1호
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• pp.106-112
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• 1997

본 연구는 직류 저항회로의 개폐불꽃에 의한 폭발성 가스의 점화한계를 실험적으로 고찰하였다. 실험은 IEC형 불꽃점화 시험장치의 폭발용기에 폭발성 가스(메탄-공기 프로판-공기, 에틸렌-공기, 수소-공기)를 각각 넣고 텅스텐 전극과 카드뮴 전극사이에서 발생하는 3,200회의 개폐불꽃에 의한 점화유무를 확인하므로서 점화한계를 구하였다. 또한 실험장치의 점화감도교정을 실험한 후에 실시하므로서 실험의 정확성을 기하였다. 실험결과 최소 점화 전류값을 갖는 최소점화한계농도는 메탄-공기 8.3 [$Vol\%$], 프로판-공기 5.25[$Vol\%$], 에틸렌-공기 7.8[$Vol\%$], 수소-공기 21[$Vol\%$]로서 기존의 실험결과와 유사한 결과를 나타내었다. 또한 최소점화한계농도에서 전압과 최소점화잔류와의 관계를 구한 결과 최소점화한계는 메탄, 프로판, 에틸렌, 수소가스의 순서로 낮아졌고 점화전류의 크기는 전원전압의 크기와 반비례하고, 전극의 과열현상으로 인하여 전압 약 20(V)이하에서는 최소점화전류가 2(A)를 넘으면서 심화한계곡선이 급격히 상승한다는 것 등을 알 수 있었다.

• 방사성폐기물학회지
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• 제15권4호
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• pp.313-320
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• 2017

LiCl-KCl 용융염에서 광학적으로 투명한 텅스텐 망으로 제작된 작업전극에 대해 사마륨의 전기화학적 거동을 Cyclic voltammetry와 Potential step chronoabsorptometry의 전기화학적 및 분광전기화학적 방법으로 조사하였다. Cyclic voltammogram으로 결정된 $Sm^{3+}/Sm^{2+}$의 산화환원 반응의 가역성을 기반으로 형식전위와 확산계수를 계산하여 각각 -1.99 V vs. $Cl_2/Cl^-$와 $2.53{\times}10^{-6}cm^2{\cdot}s^{-1}$를 얻었다. 작업 전극에 -1.5 V vs. Ag/AgCl (wt%)로 전압을 인가하여 측정한 Chronoabsorptometry를 통해 사마륨 이온의 특성 파장으로 $Sm^{3+}$에 대해 408.08 nm, $Sm^{2+}$에 대해 545.62 nm를 확인하였다. Voltammogram에서 얻은 환원 피크 전압과 산화 피크 전압을 이용하여 Potential step chronoabsorptometry를 수행하였다. 545.63 nm의 흡광피크 값을 분석하여 $2.15{\times}10^{-6}cm^2{\cdot}s^{-1}$의 확산계수를 얻었으며 이 값은 동일한 온도에서 Cyclic voltammtry 분석으로 얻은 값과 큰 차이를 보이지 않았다. 실험결과로부터 고온 용융염에서 광학적으로 투명한 작업전극을 이용한 분광전기화학적 방법이 용융염에 용해된 이온의 종류를 확인하며 전기화학적 거동을 조사하는데 유용한 도구로 활용될 수 있음을 확인하였다.