• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8A
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• pp.1134-1143
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• 2000

We propose a scheduling algorithm, Bandwidth Allocation Scheme (BAS), that guarantees bounded delay in a switching node. It is based on the notion of the GPS (Generalized Processor Sharing) mechanism, which has clarified the concept of fair queueing with a fluid-flow hypothesis of traffic modeling. The main objective of this paper is to determine the session-level weights that define the GPS sewer. The way of introducing and derivation of the so-called system equation' implies the approach we take. With multiple classes of traffic, we define a set of service curves:one for each class. Constrained to the required profiles of individual service curves for delay satisfaction, the sets of weights are determined as a function of both the delay requirements and the traffic parameters. The schedulability test conditions, which are necessary to implement the call admission control, are also derived to ensure the proposed bandwidth allocation scheme' be able to support delay guarantees for all accepted classes of traffic. It is noticeable that the values of weights are tunable rather than fixed in accordance with the varying system status. This feature of adaptability is beneficial towards the enhanced efficiency of bandwidth sharing.

• Applied Chemistry for Engineering
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• v.20 no.3
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• pp.279-284
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• 2009

The formation of mesoporous pores in the microporous mordenite crystals was performed by controlled silica extraction on alkaline treatment. Inner tunable mesopore size could be controlled by changing the concentration of alkaline solution. The pore structure of mordenite zeolite was studied by instrumental analysis after alkaline-treatment. To obtain the cage type mesopores, Ti-coating on the ourside mordenite crystals before alkaline treatment was investigated to be the most effective. Polymeric chiral salen Co (III) complexes were successfully encapsulated in mesoporous mordenite zeolite by "ship-in-a-bottle" method. The heterogeneous catalyst could be applied in asymmetric ring opening of epichlorohydrine by water. It showed very excellent enantioselectivity with a high yield in the catalysis.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.5A
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• pp.359-369
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• 2005

For large capacity optical CDMA networks, we propose a shared-type encoder/decoders based on an tunable wavelength converter(TWC) and an arrayed waveguide grating (AWG) router. The proposed encoder/decoder treats codewords of wavelength/time 2-D code simultaneously using the dynamic code allocation property of the TWC and the cyclic property of the AWG router, and multiple subscribers can share the encoder/decoder in networks. Feasibility of the structure of the proposed encoder/decoder for dynamic code allocation is tested through simulations using two wavelength/time 2-D codes, which are the generalized multi-wavelength prime code(GMWPC) and the generalized multi-wavelength Reed-Solomon code(GMWRSC). Test results show that the proposed encoder/decoder can increase the channel efficiency not only by increasing the number of simultaneous users without any multiple-access interference but by using a relatively short length CDMA codes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.1-8
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• 2013

This paper presents a variable gain amplifier(VGA) without passive devices. This VGA employes the architecture of current feedback amplifier and variable gain can be achieved by using the GM ratios of two trans-conductance(gm) circuits. To obtain linearity and high gain, it uses current division technique and source degeneration in feedback GM circuits. Input trans-conductance(GM) circuit was biased by using a tunable voltage controller to obtain variable gain. The prototype of the VGA is designed in $0.35{\mu}m$ CMOS technology and it is operating in sub-threshold region for low power consumption. The the gain of proposed VGA is varied from 23dB to 43dB, and current consumption is $2.82{\mu}A{\sim}3{\mu}A$ at 3.3V. The area of VGA is 1$120{\mu}m{\times}100{\mu}m$.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1653-1668
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• 2005

Assembly of hybrid mesophases through the combination of amphiphilic block copolymers, acting as structuredirecting agents, and silicon sources using low acid catalyst concentration regimes is a versatile strategy to produce large quantities of high-quality ordered large-pore mesoporous silicas in a very reproducible manner. Controlling structural and textural properties is proven to be straightforward at low HCl concentrations with the adjustment of synthesis gel composition and the option of adding co-structure-directing molecules. In this account, we illustrate how various types of large-pore mesoporous silica can easily be prepared in high phase purity with tailored pore dimensions and tailored level of framework interconnectivity. Silica mesophases with two-dimensional hexagonal (p6mm) and three-dimensional cubi (Fm$\overline{3}$m, Im$\overline{3}$m and Ia$\overline{3}$d) symmetries are generated in aqueous solution by employing HCl concentrations in the range of 0.1−0.5 M and polyalkylene oxide-based triblock copolymers such as Pluronic P123 $(EO_{20}-PO_{70}-EO_{20})$ and Pluronic F127 $(EO_{106}-PO_{70}-EO_{106})$. Characterizations by powder X-ray diffraction, nitrogen physisorption, and transmission electron microscopy show that the mesoporous materials all possess high specific surface areas, high pore volumes and readily tunable pore diameters in narrow distribution of sizes ranging from 4 to 12 nm. Furthermore, we discuss our recent advances achieved in order to extend widely the phase domains in which single mesostructures are formed. Emphasis is put on the first synthetic product phase diagrams obtained in $SiO_2$-triblock copolymer-BuOH-$H_2O$ systems, with tuning amounts of butanol and silica source correspondingly. It is expected that the extended phase domains will allow designed synthesis of mesoporous silicas with targeted characteristics, offering vast prospects for future applications.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• Journal of electromagnetic engineering and science
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• v.17 no.3
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• pp.153-158
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• 2017

This work reports on the effect of plasma area on the frequency characteristics of the monostatic radar cross section (RCS) of a square metallic plate. A dielectric barrier discharge (DBD) plasma actuator consisting of 10 rings is proposed. The actuator is fabricated in three different configurations such that only three inner rings, seven inner rings, and all rings can be biased. By applying an 18-kV bias at 1 kHz, the three types of DBD actuators generate plasma with a total area of 16.96, 36.74, and $53.69cm^2$, respectively, in a ring or circular form. The experimental results reveal that when the DBD actuator is placed in front of a $20mm{\times}20cm$ conducting plate, the monostatic RCS is reduced by as much as 18.5 dB in the range of 9.41-11.65 GHz. Furthermore, by generating the plasma and changing the area, the frequency of maximum reduction in the monostatic RCS of the plate can be controlled. The frequency is reduced by nearly 20% in the X band when all rings are biased. Finally, an electromagnetic model of the plasma is obtained by comparing the experimental and full-wave simulated results.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.246-246
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• 2016

Tungsten-nitrogen (W-N) co-doping has been known to enhance the photocatalytic activity of anatase titania nanoparticles by utilizing visible light. The doping effects are, however, largely dependent on calcination or annealing conditions, and thus, the massive production of quality-controlled photocatalysts still remains a challenge. Using density functional theory (DFT) thermodynamics and time-dependent DFT (TDDFT) computations, we investigate the atomic structures of N doping and W-N co-doping in anatase titania, as well as the effect of the thermal processing conditions. We find that W and N dopants predominantly constitute two complex structures: an N interstitial site near a Ti vacancy in the triple charge state and the simultaneous substitutions of Ti by W and the nearest O by N. The latter case induces highly localized shallow in-gap levels near the conduction band minimum (CBM) and the valence band maximum (VBM), whereas the defect complex yielded deep levels (1.9 eV above the VBM). Electronic structures suggest that substitutions of Ti by W and the nearest O by N improves the photocatalytic activity of anatase by band gap narrowing, while defective structure degrades the activity by an in-gap state-assisted electron-hole recombination, which explains the experimentally observed deep level-related photon absorption. Through the real-time propagation of TDDFT (rtp-TDDFT), we demonstrate that the presence of defective structure attracts excited electrons from the conduction band to a localized in-gap state within a much shorter time than the flat band lifetime of titania. Based on these results, we suggest that calcination under N-rich and O-poor conditions is desirable to eliminate the deep-level states to improve photocatalysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.1-361.1
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• 2016

Due to their high sensitivity, fast response, small energy consumption and ease of integration, nanoelectromechanical systems (NEMS) have attracted much interest in various applications such as high speed memory devices, energy harvesting devices, frequency tunable RF receivers, and ultra sensitive mass sensors. Since the device performance of NEMS is closely related with the mechanical and flexural properties of the material in NEMS, analysis of the mechanical and flexural properties such as intrinsic tensile stress and Young's modulus is a crucial factor for designing the NEMS structures. In the present work, the intrinsic mechanical properties of highly stressed silicon nitride (SiN) beams are investigated as a function of the beam length using two different techniques: (i) dynamic flexural measurement using optical interferometry and (ii) quasi-static flexural measurement using atomic force microscopy. The reliability of the results is analysed by comparing the results from the two different measurement techniques. In addition, the mass density, Young's modulus and internal stress of the SiN beams are estimated by combining the techniques, and the prospect of SiN based NEMS for application in high sensitive mass sensors is discussed.