• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.3905-3910
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• 2010

In this paper, a 3rd-order Chebyshev current-mode filter in 1.8V-$0.18{\mu}m$ CMOS parameter is designed. The core circuit of the current-mode filter is composed with the proposed voltage-controlled frequency tunable current-mode integrator. Using the proposed current-mode integrator, the cutoff frequency of the filter can be controlled and also total power consumption can be reduced. HSPICE simulation results show the cutoff frequency of the filter is controlled between 1.2MHz and 10.1MHz, and the power consumption is 2.85mW at Vdd=1.8V.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.2
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• pp.25-30
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• 2010

In this paper, a novel notch resonator is proposed based on Rectanglar Split Ring Resonator (R-RSS) element. We represented the electrical characteristics for R-SRR elements coupled with microstrip line, and measured result is compared with electromagnetic simulation (HFSS) result. We also solved equivalent circuit for R-SRR element, and also discussed influences of change structural parameters of R-SRR. the size of R-SRR is the most important parameters for frequency tuning. Also we can make tunable resonator form the basic structure. This novel resonator can apply to design of tunable bandpass filter and voltage control oscillator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.581-584
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• 2002

In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

• Korean Journal of Optics and Photonics
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• v.15 no.2
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• pp.100-103
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• 2004

A systematic method for tunable dispersion compensation based on chirped fiber Bragg gratings without a center wavelength shift is proposed. The specially designed mechanical rotator can flexibly control the chirping ratio along the fiber grating and the corresponding dispersion value. The group delay can be linearly controllable since the proposed method can induce a linear strain gradient with the rotation angle change. The dispersion value could be controlled from 228.04 ㎰/nm to 1430.7 ㎰/nm with small center wavelength shift, which was less than 0.03 nm.

• Journal of IKEEE
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• v.5 no.2 s.9
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• pp.201-210
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• 2001

Wavelength and repetition-rate tunable optical pulse-trains for ultrafast optical time- and wavelength division multiplexing are generated from a semiconductor fiber ring laser by optical injection mode-locking. The pulse trains show the pulse with of ${\sim}10$ ps and the wavelength tuning of wider than 30 nm at various repetition-rates of 10 GHz, 20 GHz, 30 GHz and 40 GHz, respectively.

• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.120-126
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• 2006

Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Journal of IKEEE
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• v.22 no.3
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• pp.780-785
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• 2018

In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.241-246
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• 2018

In this study, we proposed a wideband frequency tunable metamaterial absorber using a switchable ground plane (SGP). We proposed two fire retardant or flame resistant 4 (FR4) substrate structures for the SGP. An SGP is placed at the middle layer, between the top pattern and the bottom ground plane. The SGP can either be made ground or reactive, by switching the PIN diode ON/OFF. As the frequency is determined by the substrate thickness, the frequency can be switched from the SGP. The proposed absorber is demonstrated by full-wave simulations and measurements. When the SGP is turned on, an absorptivity higher than 90% is achieved from 3.5 GHz to 11 GHz. When the SGP is turned off, an absorptivity higher than 90 % is achieved from 1.7 GHz to 5.2 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.1009-1011
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• 2012

In this paper, a wavelength tunable light source based on mutually injected locking with two F-P LDs, has been constructed and then analyzed for wavelength shift and RIN (Relative Intensity noise) according to temperature. We have measured maximum about 2 nm for the wavelength shift and minimum -110dB/hz for the RIN. Also, the RIN and beating noise in eye patterns are increased by changing temperature high.