• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.288-291
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• 2002

An alkoxide-based sol-gel method was used to fabricate $(Pb_{x},Sr_{1-x})$TiO3 (PST) thin films on a Pt/Ti/SiO2/Si substrate, and the dielectric properties of the PST thin films were investigated as a function of the Pb/Sr composition for use in tunable microwave device applications. The dielectric properties of the PST films were strongly dependent on the Pb/Sr ratio. The dielectric constant and dielectric loss of the PST films increased with increasing Pb content, and the figure of merit (FOM) reached a maximum value of 27.5 at a Pb/Sr ratio of 4:6. The tunability increased with increasing Pb content. The dielectric constant, loss factor, and tunability of PST (50/50) thin films were 404, 0.023, and 51.73%, respectively. From the result, the PST films with good dielectric properties are useful candidates for tunable microwave device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Bulletin of the Korean Chemical Society
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• v.29 no.12
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• pp.2329-2330
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• 2008

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.380-384
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• 2003

The effects of the mole concentrations of precursor solution on the microstructure and dielectric properties of sol-gel deposited $Ba_{0.85}$S $r_{0.15}$Ti $O_3$(BST) thin films have been investigated. The films were of single perovskite phase with strong (100) preferred orientation when grown on LaNi0$_3$ buffered Pt/Ti/ $SiO_2$Si substrates using a diluted precursor solution. Variation of the precursor solution concentration resulted in a different microstructure and, in turn, affected the tunability of the sol-gel deposited films. It was observed that leakage currents increased asymmetrically for the negative and positive bias voltage with decreasing thickness. Overall results suggest that those BST films have acceptable properties f3r applications as room-temperature tunable elements.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1593-1596
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• 2007

Various yellow-emitting $Y_3Al_5O_{12}:Ce^{3+}$ (YAG:Ce) nanocrystalline phosphors, where some $Al^{3+}$ sites are substituted with $Ga^{3+}$ or some Y sites with Gd3+, have been synthesized. The rare earth ions such as $Pr^{3+}$ and $Tb^{3+}$ were also co-doped into YAG:Ce system, leading to the tunability of CIE coordinates of emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.989-992
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• 2001

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.205-206
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• 2006

(BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.3-8
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• 1991

내경이 2mm, 외경이 20 mm인 BeO 세마믹관을 이용하여 단일 발진선을 갖는 연속발진 BeO 도파관 CO2 레이저를 제작하였다. 이때 레이저의 총길이는 약 420mm이며, 공진기 길이는 365mm 이다. 가스압력비가 He : N2 : CO2 = 5 : 2 : 3 이고, 가스 입력부의 총압력이 91 torr 근처에서 이 레이저의 단일 발진선인 10P(14) line의 출력이 800 mW 이상이였으며, 횡모드는 대단히 안정된 EH11 (TEM00 에 대응) 단일모드였다. 또한 위의 조건에서 이 레이저의 tunability는 367 MHz 였다.