• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.244-244
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• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as transparent electrode. Sensor films were fabricated by air spray method using the multi-walled CNTs solution on glass substrates. The film that was sprayed with the MWCNT dispersion for 60 sec, was 300nm thick. And the electric resistivity and the light transmittance rate are $2{\times}10^2{\Omega}cm$ and 60%, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.822-824
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• 2002

Transparent conducting ZnO:$Ga_2O_3$ thin films were deposited on glass substrates using rf magnetron sputtering method. The ZnO:$Ga_2O_3$ thin films were highly c-axis oriented normal to the substrates and had smooth surface features. The sheet resistance of the films was 2.8-6.4 ${\Omega}/{\square}$ at the growth temperature ranging from 25 to 30$^{\circ}C$.

• Journal of the Optical Society of Korea
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• 제8권1호
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• pp.21-28
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• 2004

When femtosecond laser pulses are focused inside the bulk of transparent materials, the intensity in the focal volume becomes high enough to produce permanent structural modifications. This technique has been applied to fabricate three-dimensional photonic structures such as optical memory, waveguides, gratings, and couplers inside a wide variety of transparent materials. In this paper, we review the fabrication of optical elements in glasses with femtosecond laser pulses, including the fabrication of waveguides, couplers, Bragg gratings, zone plates, holographic memory, and micro holes.

• 한국결정성장학회지
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• 제20권1호
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• pp.43-52
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• 2010

삼척 도계지역의 탄광에서 석탄채취시에 발생되는 석탄폐석을 이용하여 유리를 제조하였다. 소다라임계 화학조성을 갖는 유리를 제조하기 위하여 화학원료로서 소다회, 탄산칼슘 등의 원료를 추가로 사용하였고, 화학원료인 탄산칼슘 대신에 천연광물원료인 석회석을 사용하였을 때의 특성을 검토하였다. 전기로를 사용하여 $1,550^{\circ}C$에서 1시간 용응하여 투명한 유리를 제조할 수 있었다. 석탄폐석의 종류 및 파유리의 종류에 따라 다양한 종류의 유리샘플이 제조되었다. 유리샘플의 투과율 및 색차와 같은 광학적 특성을 UV/VIS/NIR Spectrometer를 이용하여 측정하였고, 또한 열팽창계수 및 연화점과 같은 열적특성도 측정하였다. 그 결과, 일반 선탄경석으로는 70% 이상의 가시광선투과율을 갖는 투명한 유리를 제조할 수 있었으며, 또한 쉘(shell) 타입의 선탄경석으로는 0~35%의 가시광선 투과율을 갖는 검정색의 칼라유리를 제조할 수 있었다. 따라서 석탄폐석을 이용하여 건축재료로서 유리타일이나 발포유리와 같은 유리 2차제품을 제조하는데 활용할 수 있으리라 판단되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• 한국표면공학회지
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• 제40권4호
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• pp.190-196
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• 2007

Dye sensitized solar cells(DSSC) are the most promising future energy resource due to their high energy efficiency, low production cost, and simple manufacturing process. But one problem in DSSC is short life time compared to silicon solar cells. This problem occurred from photocatalytic degradation of dye material by nanometer sized $TiO_2$ particles. To prevent dye degradation as well as to increase its life time, the transparent coating film is needed for UV blocking. In this study, we synthesized nanometer sized $TiO_2$ particles in sols by increasing its internal pressure up to 200 bar in autoclave at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several nm to 30 nm. Synthesized $TiO_2$ sols were coated on the backside of fluorine doped tin oxide(FTO) glass by ink jet printing method. With increasing coating thickness by repeated ink jet coating, the absorbance of UV region (under 400 nm) also increases reasonably. Decomposition test of titania powders dispersed in 0.1 mM amaranth solution covered with $TiO_2$ coating glass shows more stable dye properties under UV irradiation, compared to that with as-received FTO glass.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.37-43
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• 2012

We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of $3.079{\times}10^{-4}\;{\Omega}cm$ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.