• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.13.1-13.1
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• 2011

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) [1-5]. In this presentation, we introduce inverse opal-based scattering layers containing highly crystalline anatase nanoparticles and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength. A new ITO nanowire-based photoelecrode is also introduced and its unique charge collection property is presented, demonstrating potential use for highly efficient charge collection in DSSC.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.7.2-7.2
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• 2011

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO). In this presentation, we introduce monodisperesed TiO2 nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Inverse opal-based scattering layers containing highly crystalline anatase nanoparticles are also introduced and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.28-28
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• 2010

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11-12%, in contrast to their theoretical value of 33%. Improvements in efficiency can only occur through a fundamental understanding of the underlying physics, materials, and device designs of DSSCs. A photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) is a key component of DSSC and design of photoelectrode materials is one of promising strategies to improving energy conversion efficiency. We introduce monodisperesed $TiO_2$ nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Multi-layered TCO materials are also introduced and their feasibility for use as photoelectrodes is discussed in terms of optical absorption and charge collecting properties.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.537-546
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• 2023

Intrinsically stretchable light-emitting diodes, composed of stretchable electrodes, charge transport layers, and luminescent materials, have garnered significant interest for enhancing human well-being and advancing the field of deformable electronics. Various luminescent materials, such as perovskites and organics, have been integrated with stretchable elastomers to function as the stretchable emissive layers in these intrinsically stretchable LEDs. Stretchable conductors including Ag nanowire based percolating structures and conducting polymers have been utilized as stretchable transparent electrode. Despite this progress, their performances in terms of efficiency and stability remain challenging compared to their structurally stretchable and rigid LED counterparts. This review offers a comprehensive overview of recent advancements in intrinsically stretchable LEDs, focusing on material innovations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.571-575
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• 2005

In order to improve the efficiency of dye-sensitized solar cell (DSSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature$(350\;to\;550^{\circ}C)$. $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSSCs were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). Below sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively lower due to lower open circuit voltage. Oppositely, above sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively higher due to higher open circuit voltage. In both cases, lower fill factor (FF) was observed. However, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSSCs were mutually complementary, enhancing highest fill factor and efficiency. Such results can be explained in comparison of surface morphology with schematic diagram of energy states on the $TiO_2$ electrode surface. Consequently, it was considered that optimum sintering temperature of a-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.110-115
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• 2010

Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], $Ga_2O_3$ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[$^{\circ}C$], Ar flow rate of 50[sccm], $O_2$ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of $2.536{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $7.746{\times}10^{20}[cm^{-3}]$, and a carrier mobility of 31.77[$cm^2/V{\cdot}S$], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Journal of Powder Materials
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• v.24 no.6
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• pp.464-471
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• 2017

A metal mesh TCE film is fabricated using a series of processes such as UV imprinting of a transparent trench pattern (with a width of $2-5{\mu}m$) onto a PET film, filling it with silver paste, wiping of the surface, and heat-curing the silver paste. In this work nanosized (40-50 nm) silver particles are synthesized and mixed with submicron (250-300 nm)-sized silver particles to prepare silver paste for the fabrication of metal mesh-type TCE films. The filling of these silver pastes into the patterned trench layer is examined using a specially designed filling machine and the rheological testing of the silver pastes. The wiping of the trench layer surface to remove any residual silver paste or particles is tested with various mixture solvents, and ethyl cellosolve acetate (ECA):DI water = 90:10 wt% is found to give the best result. The silver paste with 40-50 nm Ag:250-300 nm Ag in a 10:90 wt% mixture gives the highest electrical conductance. The metal mesh TCE film obtained with this silver paste in an optimized process exhibits a light transmittance of 90.4% and haze at 1.2%, which is suitable for TSP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.270-270
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• 2010

OLED device is one of the most attractive and alternative display components, which stems primarily from the self-emission, large intrinsic viewing angle, and fast switching speed. However, because of its relatively short history of development, much remains to be studied in terms of its basic device physics, manufacturing processes, and reliability etc. Especially among several issues, it should be noted that the device characteristics are very sensitive to the surface properties of transparent conducting oxide (TCO) electrode materials. In this study, we have investigated the performance of OLED devices as a function of sheet resistance and surface roughness of TCO thin films. For this purpose, ITO and IZO thin films were deposited by r. f. magnetron sputtering under various ambient gases (Ar, Ar+O2 and Ar+H2, respectively). The crystal structure and surface morphology were examined by using XRD and FESEM. Also, electrical and optical properties were Investigated.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.568-574
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• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.