• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.41-41
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• 2008

Al-doped ZnO (AZO) thin films have been fabricated by vertical in-line dc magnetron sputtering for transparent conducting oxides (TCOs) applications. The effects of substrate temperature and dc power on the characteristics of AZO thin films are investigated and also optimized the process conditions to get the best electrical and optical properties. The fabricated thin films show a good electrical and optical uniformity within ${\pm}5%$ over the whole area of substrate ($200mm\;{\times}\;200mm$) ; the minimum resistivity of $8\;{\times}\;10^{-4}\;{\Omega}cm$ and the average transmittance of 90% within the visible wavelength range. We have found that the band gap ($E_g$) increases with increasing substrate temperature and dc power, whereas the crystallinity is getting improved with increasing substrate temperature. The binding energy of Zn $2p_{3/2}$ and O 1s is observed to decrease as the substrate temperature increases.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.43-50
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• 1998

Transparent and conducting tin oxide films were prepared on Pyrex glass substrates by the remote plasma chemical vapor deposition (RPCVD). The main control variables of the RPCVD process included the deposition time, the flow rates of tetramethyltin, oxygen and argon, the radio-frequency power, and the substrate temperature. Dependence of the deposition rate, electric resistivity, optical transmittance and crystal structure on these parameters was systematically examined to prepare high qualities of tin oxide films and to better understand RPCVD process. The effect of those parameters on the properties of tin oxide films in complicatedly related on another. A tin oxide film parameters on the protimized deposition conditions exhibited deposition rate of 102 $\AA$/min, electric resistivity of $9.7\times 10^{-3}\Omega$cm and visible transmittance of ~80%.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.52-52
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• 2007

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.1-10
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• 1996

Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

• Journal of Surface Science and Engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.136-136
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• 2001

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.275-279
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• 2015

Poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) has attracted a great deal of attention as a transparent conductive material for organic solar cells or organic light-emitting diodes due to its high electrical conductivity, optical transparency, and excellent mechanical flexibility. It is well known that a solvent doping for PEDOT : PSS thin-films significantly increases the conductivity of films. In this paper, the effect of various kinds of solvent doping and post-treatment on the electrical and structural properties of PEDOT : PSS thin-films is investigated. The solvent doping greatly increases the conductivity of PEDOT : PSS thin-films up to 884 S/cm. A further enhancement of the conductivity of PEDOT : PSS thin-films is achieved by the solvent post-treatment which raises the conductivity up to 1131 S/cm. The enhancement is mainly caused by the depletion of insulating PSS and forming conducting PEDOT-rich granular networks. Strong optical absorption peaks at the wavelength of 225 nm of PEDOT : PSS thin-films indicate the depletion of insulating PSS by post-treatment. We believe that the solvent post-treatment is a promising method to achieve highly conductive transparent PEDOT : PSS thin-films for applications in efficient, low-cost and flexible organic devices.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.352-356
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• 2011

Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.