• Title/Summary/Keyword: transmission power

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Microstructure and Mechanical Property of Irradiated Zr-2.5Nb Pressure Tube in Wolsong Unit-1

  • 김영숙;안상복;오동준;김성수;정용무
    • Transactions of Materials Processing
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    • v.8 no.3
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    • pp.241-241
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    • 1999
  • With the aim of assessing the degradation of Zr-2.5Nb pressure tubes operating in the Wolsong unit-1 nuclear power plant, characterization tests are being conducted on irradiated Zr-2.5Nb tubes removed after 10-year operation. The examined tube had been exposed to temperatures ranging from 264 to 306℃ and a neutron fluence of 8.9×$10^{21}$ n/cm²(E>1 MeV) at the maximum. Tensile tests were carried out at temperatures ranging from RT to 300℃. The density of a-type and c-type dislocations was examined on the irradiated Zr-2.5Nb tube using a transmission electron microscope. Neutron irradiation up to 8.9×$10^{21}$ n/cm²(E>1 MeV) yielded an increase in a-type dislocation density of the Zr-2.5Nb pressure tube to 7.5×$10^{14} m^{-2}$, which was highest at the inlet of the tube exposed to the low temperature of 275℃. In contrast, the c-component dislocation density did not change with irradiation, keeping an initial dislocation density of 0.8×$10^{14} m^{-2}$ over the whole length of the tube. As expected, the neutron irradiation increased mechanical strength by about 17-26% in the transverse direction and by 34-39% in the longitudinal direction compared to that of the unirradiated tube at 300℃. The change in the mechanical properties with irradiation is discussed in association with the microstructural change as a function of temperature and neutron fluence.

A Study on Algorithm for Gear Profile Measurement Using a Standard Gear (표준기어를 이용한 기어 프로파일 정밀측정 알고리즘에 관한 연구)

  • Lee, Min-Ki;Lee, Eung-Suk;Kim, Kuang-Jung;Park, Hyun-Yoong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.5
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    • pp.555-561
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    • 2012
  • In this paper, a method to control the noise and vibration of a standard gear transmitting mechanical power in the transmission insides, to things regarding a way to inspect the gear which was processed minutely. In an algorithm used to accurately measure a work gear, the measurements of the master gear are considered as the basis. The existing method considers one rotation of the standard gear and monitor gear, and that carried out mastering work in frequency ways. In this study, an algorithm to measure standard gear and monitor gear is proposed along with methods to calculate an error of the monitor gear and to significantly increase the precision of gear measurement. Further, the algorithm is fast and is expected to be capable of accurately measuring for mastering processing.

The Doping Concentration and Physical Properties Measurement of Silicon Wafer Using Terahertz Wave (테라헤르츠파를 이용한 실리콘 웨이퍼의 도핑 정도와 물리적 특성 측정에 관한 연구)

  • Park, Sung Hyeon;Oh, Gyung Hwan;Kim, Hak Sung
    • Journal of the Korean Society for Nondestructive Testing
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    • v.37 no.1
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    • pp.1-6
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    • 2017
  • In this study, a terahertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of $30^{\circ}$ were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from $10^{14}$ to $10^{18}$ in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

Metal-induced Crystallization of Amorphous Ge on Glass Synthesized by Combination of PIII&D and HIPIMS Process

  • Jeon, Jun-Hong;Kim, Eun-Kyeom;Choi, Jin-Young;Park, Won-Woong;Moon, Sun-Woo;Lim, Sang-Ho;Han, Seung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.144-144
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    • 2012
  • 최근 폴리머를 기판으로 하는 고속 Flexible TFT (Thin film transistor)나 고효율의 박막 태양전지(Thin film solar cell)를 실현시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)와 긴 이동거리를 가지는 다결정 반도체 박막(poly-crystalline semiconductor thin film)을 만들고자 하고 있다. 지금까지 다결정 박막 반도체를 만들기 위해서는 비교적 높은 온도에서 장시간의 열처리가 필요했으며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮추어 주는 metal (Al, Ni, Co, Cu, Ag, Pd, etc.)을 이용하여 결정화시키는 방법(MIC)이 많이 연구되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔류 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도와 이동거리를 감소시키는 단점이 있다. 이에 본 실험은, 종래의 MIC 결정화 방법에서 이용되어진 금속 증착막을 이용하는 대신, HIPIMS (High power impulse magnetron sputtering)와 PIII&D (Plasma immersion ion implantation and deposition) 공정을 복합시킨 방법으로 적은 양의 알루미늄을 이온주입함으로써 재결정화 온도를 낮추었을 뿐 아니라, 잔류하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GIXRD (Glazing incident x-ray diffraction analysis)와 Raman 분광분석법을 사용하였고, 잔류하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS (X-ray photoelectron spectroscopy)를 통한 분석을 하였다. 또한, 표면 상태와 막의 성장 상태를 확인하기 위하여 HRTEM(High resolution transmission electron microscopy)를 통하여 관찰하였다.

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Transparent Oxide Thin Film Transistors with Transparent ZTO Channel and ZTO/Ag/ZTO Source/Drain Electrodes

  • Choi, Yoon-Young;Choi, Kwang-Hyuk;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.127-127
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    • 2011
  • We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

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중성빔 식각을 이용한 Metal Gate/High-k Dielectric CMOSFETs의 저 손상 식각공정 개발에 관한 연구

  • Min, Gyeong-Seok;O, Jong-Sik;Kim, Chan-Gyu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.287-287
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    • 2011
  • ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

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Spindle-shaped Fe2O3 Nanoparticle Coated Carbon Nanofiber Composites for Low-cost Dye-sensitized Solar Cells (저비용 염료감응 태양전지를 위한 방추형 Fe2O3 나노입자가 코팅된 탄소나노섬유 복합체)

  • Oh, Dong-Hyeun;An, HyeLan;Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Journal of Powder Materials
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    • v.23 no.2
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    • pp.95-101
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    • 2016
  • Carbon nanofiber (CNF) composites coated with spindle-shaped $Fe_2O_3$ nanoparticles (NPs) are fabricated by a combination of an electrospinning method and a hydrothermal method, and their morphological, structural, and chemical properties are measured by field-emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. For comparison, CNFs and spindle-shaped $Fe_2O_3$ NPs are prepared by either an electrospinning method or a hydrothermal method, respectively. Dye-sensitized solar cells (DSSCs) fabricated with the composites exhibit enhanced open circuit voltage (0.70 V), short-circuit current density ($12.82mA/cm^2$), fill factor (61.30%), and power conversion efficiency (5.52%) compared to those of the CNFs (0.66 V, $11.61mA/cm^2$, 51.96%, and 3.97%) and spindle-shaped $Fe_2O_3$ NPs (0.67 V, $11.45mA/cm^2$, 50.17%, and 3.86%). This performance improvement can be attributed to a synergistic effect of a superb catalytic reaction of spindle-shaped $Fe_2O_3$ NPs and efficient charge transfer relative to the one-dimensional nanostructure of the CNFs. Therefore, spindle-shaped $Fe_2O_3$-NP-coated CNF composites may be proposed as a potential alternative material for low-cost counter electrodes in DSSCs.

Design of A Asymmetric Branch Line Coupler Using Artificial Dielectric Substrate (가유전체 기판을 이용한 비대칭 브랜치 라인 커플러의 설계)

  • Lim, Jong-Sik;Lee, Jae-Hoon;Kwon, Kyung-Hoon;Ahn, Dal
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.5
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    • pp.2319-2324
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    • 2012
  • In this paper, the design of asymmetric branch line couplers using artificial dielectric substrate (ADS) is described. The effective permittivity and permeability increase in ADS because of the lots of the inserted via-holes. So the physical length and width of transmission lines realized on ADS are reduced compared to the standard lines. This enables one to design size-reduced microwave circuits. As an instance in this work, an asymmetric branch line coupler with the ratio of 3:1 is designed at 2GHz. The designed coupler has a small size of 53.4% compared to the normal circuit while the same performances are preserved. A good agreement between the simulated and measured asymmetric power dividing ratio is shown. The measured loss is only less than 0.2dB, which is a very small value.

Numerical Analysis of Load Carrying Capacity of RC Structures Based on Concrete Damage Model (콘크리트 손상 모델을 적용한 콘크리트 구조물 구조내력 해석)

  • Woo, Sang Kyun;Lee, Yun;Yi, Seong Tae
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.16 no.5
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    • pp.121-128
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    • 2012
  • In this paper, nonlinear analysis for reinforced concrete structure for power transmission line is performed by considering the characteristics of the failure, which are depend on loading conditions and concrete material models. On the numerical evaluation for the failure behavior, the finite element analysis is applied. For the concrete material model, microplane model based on concrete damage is introduced. However, to describe the crack bridging effect of long and short fiber of steel fiber reinforced concrete (SFRC), tensile softening model is suggested and applied for SFRC. An numerical results by finite element technique are compared with the experiment results for box culvert specimen. Comparing on the experimental and analytical results, validity and reliability of numerical analysis are investigated.

Development of an Inexpensive Black Box with Transmission of SOS and Theft Signal for an Agricultural Tractor (도난방지 및 구조신호 전송기능이 있는 저가형 농용트랙터 블랙박스 개발)

  • Kim, YuYong;Shin, Seung-Yeoub;Kim, Byounggap;Kim, Hyung Kweon;Cho, Yongho;Kim, Jinoh
    • Journal of Biosystems Engineering
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    • v.37 no.6
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    • pp.352-358
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    • 2012
  • Purpose: The inexpensive black box system was developed to acquire and save driving information, to give the slope information, and to transmit SOS and theft signal. Method: The device consists of a main micro controller to acquire and save data, a GPS sensor module, a CDMA module, a touch LCD module, a RF (Radio Frequency) ID module, a SD (Secure Digital) card module, an emergency electric power source, a theftproof circuit, and a sensing device. The sensing device consists of a 8 bit micro controller, a accelerometer to detect impulse, two slope sensors to detect roll and pitch angle and a circuit to detect operation of 6 lighting devices. Results: Test results are as follows: 1) a tractor can be start up only with an electronic key (password or RFID card), 2) theft signal was transmitted when a tractor moved without an electronic key, 3) SOS was transmitted at conditions that rollover or crash happened. 4) 5 more than per 1s data are recorded at 5 minute intervals as new file name in SD card. Conclusions: This system can be used to save travelling record, reduce accident, prevent theft and rescue life in the accidents.