• Title/Summary/Keyword: transition-metal films

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Support Effect of Arc Plasma Deposited Pt Nanoparticles/TiO2 Substrate on Catalytic Activity of CO Oxidation

  • Qadir, Kamran;Kim, Sang Hoon;Kim, Sun Mi;Ha, Heonphil;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.261-261
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    • 2013
  • The smart design of nanocatalysts can improve the catalytic activity of transition metals on reducible oxide supports, such as titania, via strong metal-support interactions. In this work, we investigatedtwo-dimensional Pt nanoparticle/titania catalytic systems under the CO oxidation reaction. Arc plasma deposition (APD) and metal impregnation techniques were employed to achieve Pt nanoparticle deposition on titania supports, which were prepared by multitarget sputtering and sol-gel techniques. APD Pt nanoparticles with an average size of 2.7 nm were deposited on sputtered and sol-gel-prepared titania films to assess the role of the titania support on the catalytic activity of Pt under CO oxidation. In order to study the nature of the dispersed metallic phase and its effect on the activity of the catalytic CO oxidation reaction, Pt nanoparticles were deposited in varying surface coverages on sputtered titania films using arc plasma deposition. Our results show an enhanced activity of Pt nanoparticles when the nanoparticle/titania interfaces are exposed. APD Pt shows superior catalytic activity under CO oxidation, as compared to impregnated Pt nanoparticles, due to the catalytically active nature of the mild surface oxidation and the active Pt metal, suggesting that APD can be used for large-scale synthesis of active metal nanocatalysts.

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Synthesis and Characterization of Large-Area and Highly Crystalline Molybdenum Disulphide Atomic Layer by Chemical Vapor Deposition

  • Park, Seung-Ho;Kim, Yooseok;Kim, Ji Sun;Lee, Su-Il;Cha, Myoung-Jun;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.287.1-287.1
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    • 2013
  • The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

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Synthesis and Structural Properties of YBa2Cu3O7-x Films/ZnO Nanorods on SrTiO3 Substrates

  • Jin, Zhenlan;Park, C.I.;Song, K.J.;Han, S.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.169-169
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    • 2012
  • The high-temperature superconductor YBa2Cu3O7-x (YBCO) have attached attentions because of a high superconducting transition temperature, low surface resistance, high superconducting critical current density (Jc), and superior superconducting capability under magnetic field. Moreover, the Jc of YBCO superconductors can be enhanced by adding impurities to the YBCO films for vortex-pinning. Understanding and controlling pinning centers are key factors to realize high Jc superconductors. We synthesized vertically-aligned ZnO nanorods on SrTiO3 (STO) substrates by catalyst-free metal-organic chemical vapor deposition (MOCVD), and subsequently, deposited YBCO films on the ZnO nanorods/STO templates using pulsed laser deposition (PLD). The various techniques were used to analyze the structural and interfacial properties of the YBCO/ZnO nanorods/STO hybrid structures. SEM, TEM, and XRD measurements demonstrated that YBCO films on ZnO nanorods/STO were well crystallized with the (001) orientation. EXAFS measurements from YBCO/ZnO nanorods/STO at Cu K edge demonstrated that the local structural properties around Cu atoms in YBCO were quite similar to those of YBCO/STO.

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Magnetic characteristics of Pt/Co modualted films (Pt/Co 인공격자다층막의 자기특성에 관한 연구)

  • Kim, Chan-Wook;Onishi, Atushi
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.233-240
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    • 1994
  • We have investigated how the magneto-optical and recording properties of Pt/Co modulated films vary with sample preparation conditions : sputtering at various gas pressures, sputtering with Xe instead of Ar, and etching the buffer layers, etc. The magneto-optical characteristics of Pt/Co multilayers was comparable with those of currently prevailing rare-earth transition-metal alloys(Tb-Fe-Co amorphous films). On a disk of $12{\times}[Pt10.7\;{\AA}/Co2.8{\;}{\AA}]$ multilayer enhanced with 70nm silicon nitride, we have achieved a CNR of 36dB with a reading laser(${\lambda}\;=\;780nm$) power of 2.5-4.5mW for 720KHz carrier at 1.4m/s and the enhanced kerr rotation angle of $1.23^{\circ}$ at 780nm. It is suggested that Pt/Co modulated films clearly are very promising magneto-optical materials for a commercially use.

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Deposition of Heavy Metal Oxide Glass Thin Films by R.F. Magnetron Sputtering (스퍼터링 방법을 이용한 중금속 산화물 유리 박막의 증착)

  • Kim, Woong-Kwern;Heo, Jong;Je, Jung-Ho
    • Journal of the Korean Ceramic Society
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    • v.32 no.6
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    • pp.669-676
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    • 1995
  • In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

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Preparation of reflexite collimating film (RCF) by ink-jet technique with organic-inorganic hybrid precursor

  • Hu, Yi;Liu, Jiun-Shing;Lyu, Jhong-Ming;Liu, Tung-Cheng
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1459-1461
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    • 2009
  • In this study, we prepared the multi-refraction film thin by ink-jet technique with sol-gel precursor. The precursors were prepared by using some transition metal alk-oxide and the tetraethylorthosilicate (TEOS) mixed separately with n-Butyl Alcohol and PVB (Poly(vinyl butyral)).The structure and morphology of the resulting films were investigated by atomic force microscope (AFM). It is shown that the shape of the pattern of the films would affect the refraction proportion.

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Colossal Resistivity Change of Polycrystalline NiO Thin Film Deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터 방법에 의한 다결정 NiO 박막의 비저항 변화)

  • Kim, Youmg-Eun;No, Young-Soo;Park, Dong-Hee;Choi, Ji-Won;Chae, Keun-Hwa;Kim, Tae-Hwan;Choi, Won-Kook
    • Journal of the Korean Vacuum Society
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    • v.19 no.6
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    • pp.475-482
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    • 2010
  • Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

Origin of Tearing Paths in Transferred Graphene by H2 Bubbling Process and Improved Transfer of Tear-Free Graphene Films U sing a Heat Press

  • Jinsung Kwak
    • Korean Journal of Materials Research
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    • v.32 no.12
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    • pp.522-527
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    • 2022
  • Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H2 bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H2 bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.

Physico-mechanical, AC-conductivity and microstructural properties of FeCl3 doped HPMC polymer films

  • Prakash, Y.;Somashekarappa, H.;Manjunath, A.;Mahadevaiah, Mahadevaiah;Somashekar, R.
    • Advances in materials Research
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    • v.2 no.1
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    • pp.37-49
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    • 2013
  • The transition metal salt doped solid polymer electrolyte [TSPE] were prepared with HPMC as a host polymer. The virgin and doped films were prepared by solution-casting method and investigated using wide angle X-ray scattering method. Micro structural parameters like lattice strain (g%), stacking/twin faults, the average number of unit cells counted in a direction perpendicular to the Bragg's plane (hkl) spacing of (hkl) planes dhkl, crystallite size Ds, distortion width, standard deviation were determined by whole pattern powder fitting (WPPF) method, which is an extension of single order method. It is found that the crystallite size decreases with the increase in the content of $FeCl_3$. This decrease is due to increase in localized breaking of polymer network which also accounts for the amorphous nature of the material. The filler inorganic salt $FeCl_3$ acts as plasticizer. FTIR study also confirms and justifies the interaction between the polymer and in-organic salt in the matrix. Physical properties like mechanical stability and Ac conductivity in these films are in conformity with the X-ray results.

Nanoscale Microstructure and Magnetic Transport in AIN/Co/AIN/Co… Discontinuous Multilayers

  • Yang, C.J.;Zhang, M.;Zhang, Z.D.;Han, J.S.
    • Journal of Magnetics
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    • v.8 no.2
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    • pp.98-102
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    • 2003
  • Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.