• 정보저장시스템학회논문집
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• 제1권2호
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• pp.127-131
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• 2005

We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.70.1-70.1
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• 2012

In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

• Advances in nano research
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• 제13권3호
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• pp.259-267
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• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• 한국자기학회지
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• 제17권2호
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• pp.51-54
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• 2007

역스피넬 산화물 $Fe_3O_4$에 Cr을 치환하여 얻어지는 $Cr_xFe_{3-x}O_4$ 박막 시료들을 졸-겔 스핀코팅 방법을 이용하여 제작하고 그 구조적, 전자기적 특성들에 대한 측정 및 분석을 수행하였다. X선 회절 측정 결과, Cr 성분비가 증가함에 따라 격자상수가 소폭 감소하는 것이 관측되었다. 이는 Fe 이온에 비해 이온반경이 상대적으로 작은 Cr 이온이 +3의 이온수를 가지고 8면체 자리를 치환하는 것으로 설명 가능하다. 시료들에 대한 진동시료자화를 측정한 결과, Cr 성분비 증가에 따라 포화자화량이 $Fe_3O_4$에 비하여 점차적으로 감소하였는데, 이는 8면체 자리의 $Fe^{3+}(d^5)$와 $Cr^{3+}(d^3)$ 나타내는 스핀 자기능률 값의 비교를 통하여 설명 가능하다. 또한, 자기저항 효과도 Cr 성분비 증가에 따라 포화자화량과 유사한 추세로 감소하였다. $Cr_xFe_{3-x}O_4$ 박막 시료들의 보자력은 Cr 성분비 증가에 따라 증가함을 보였는데, 이는 $Cr^{3+}$ 이온의 8면체 자리 치환에 따른 자기 이방성의 증가에 기인하는 것으로 해석된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국재료학회지
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• 제4권6호
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• pp.715-722
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• 1994

"Smart window"에 코팅재료로 쓰이는 thermochromic $Vo_{2}$박막을 전자빔 증착 방법으로 유리 기판위에 증착시켜 $0^{\circ}C$-$90^{\circ}C$ 온도범위에서 가시광 및 근적외선의 투과율을 spectrophotometer로 측정하였다. $300^{\circ}C$의 기판온도와 $400^{\circ}C$ 어닐링 온도가 $VO_{2}$ 박막이 결정화되기 때문인 것으로 확인되었다. 또한, $VO_{2}$박막을 알곤중에서 어닐링하면 500nm이하의 파장에서는 그 투과율이 상당히 낮아지는 것으로 나타났다. W가 5a/0첨가된 $V_{0.95}W_{0.05}O_{2}$박막은 약 $0^{\circ}C$의 천이돈도를 나타내었고 Sn이 0.5a/o $V_{0.995}W_{0.005}O_{2}$박막의 경우에는 $300^{\circ}C$의 기판온도에서 증착한 후 $450^{\circ}C$/5시간 동안 알곤가스 중에서 어닐링하였을때 뚜렷한 thermochromism을 나타내었으며 이 박막의 천이온도는 실용가능한 온도인 약 $25^{\circ}C$로 발견되었으며 약간의 이력곡선이 나타났다.력곡선이 나타났다.

• 한국자기학회지
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• 제16권1호
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• pp.23-27
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• 2006

역스피넬 산화물 $CoFe_2O_4$에서 Co를 Mn 또는 Cr클 치환하여 얻어지는 $Mn_xCo_{1-x}Fe_2O_4$ 및 $Cr_xCo_{1-x}Fe_2P_4$ 박막시료 들을 졸-겔 방법을 이용하여 제작하고 그 구조적, 자기적 특성들을 비교분석 하였다. X-ray diffraction 측정 결과, Mn 치환의 경우는 치환량의 증가에 따라 격자상수가 증가하였지만 Cr치환의 경우는 격자상수가 거의 변화하지 않음이 관측되었다. 이와 같은 결과는 Mn 치환의 경우 팔면체 자리의 Co이온과 같은 원자가 +2를 가지게 되는 것으로 설명 가능하며 Cr치환의 경우는 +3을 가지게 되어 같은 양의 $Fe^{3+}$이온들의 $Fe^{2+}$로의 환원이 발생하는 것으로 설명되어질 수 있다. $Cr_Co_{1-x}Fe_2O_4$박막들에 대한 Mossbauer 스펙트럼 측정 결과 사면체 자리에 $Fe^{2+}$이온의 존재가 관측되었으며 이는 $Cr^{3+}$이온의 팔면체 자리 치환에 의하여 야기되는 사면체 자리의 $Fe^{3+}{\rightarrow}Fe^{2+}$ 환원에 의한 것으로 해석된다. 반면에 $Mn_xCo_{1-x}Fe_2O_4$ 박막들에 대한 Mossbauer스펙트럼 측정 결과, $Fe^{2+}$ 이온의 존재는 관측되지 않았으며 Mn 치환량이 큰 경우 (>0.47)팔면체 자리의 $Fe^{3+}$이온들의 사면체 자리로의 이동이 관측되었다. 박막들에 대한 진동시료자화(vibrating sample magnetometry)측정 결과, Mn, Cr 치환의 경우 모두 $CoFe_2O_4$와 비교하여 포화자화량이 증가함이 나타났으며 치환에 관여한 이온들 간의 스핀 자기 능률 크기의 비교를 통하여 그 정성적인 설명이 가능하다.