• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.117-125
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• 1997

Ferroelastic $CsPbCl_3$ crystals were grown by the Czochralski method and Bridgman method. From XRD, DTA and the dielectric measurements, we investigated the structure and confirmed the phase transition temperatures of it. Using the polarizing microscope, we observed the ferroelastic domains and the temperature dependence of the domains. For the orientation states, we obtained the consistent result with the theoretical investigation by the crystallographical consideration. For Aizu species m3mF2/m(p) 12 orientation states are represented crystallographically.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.93-98
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• 1991

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1136-1142
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• 2001

$Zn_xSr_{1-x}S$ thin films were prepared in the whole composition range by rf sputtering, using powder targets of a mixture of ZnS and SrS with the required mole fraction. The possibility of existence of $Zn_xSr_{1-x}S$ solid solutions was systematically investigated from the results of thin film growth, in terms of structural, optical characteristics and the chemical bonding of the constituent atoms. The XRD, XPS and optical results made it clear that the solid solutions with a single-phased zincblende structure and a single-phased rocksalt structure were formed at $0.86~0.93{\leq}x{\leq}1\;and\;0{\leq}x{\leq}0.29$, respectively. The miscibility gap, including phase separation regions was found to exist in $0.3{\leq}x{\leq}0.86~0.91$, in which lattice constants, binding energy and absorption edges kept almost constant by the same values as those at border compositions. The experimental results on phase transition agreed well with the fraction of ionic character fi based on the Phillips' dielectric theory.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.660-664
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• 2001

$Zn_xSr_{1-x}S$ thin films were prepared in the whole composition range by rf sputtering, using powder targets of a mixture of ZnS and SrS with the required mole fraction. The possibility of existence of $Zn_xSr_{1-x}S$ solid solutions was systematically investigated from the results of thin film growth, in terns of structural, optical characteristics and the chemical bonding of the constituent atoms. The XRD, XPS and optical results made it clear that the solid solutions with a single-phased zincblende structure and a single-phased rocksalt structure were formed at $0.86~0.93{\leq}x{\leq}1$ and $0{\leq}x{\leq}0.29$, respectively. The miscibility gap, including phase separation regions was found to exist in $0.3{\leq}x{\leq}0.86~0.91$, in which lattice constants, binding energy and absorption edges kept almost constant by the same values as those at border compositions. The experimental results on phase transition agreed well with the fraction of ionic character $f_{i}$ based on the Phillips'dielectric theory.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.

• Journal of Microbiology and Biotechnology
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• v.24 no.9
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• pp.1207-1215
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• 2014

Candida albicans, the major human fungal pathogen, undergoes morphological transition from the budding yeast form to filamentous growth in response to nitrogen starvation. In this study, we identified a new function of GST2, whose expression was required for filamentous growth of C. albicans under nitrogen-limiting conditions. The Gst2p showed Gst activity and required response to oxidative stress. The ${\Delta}gst2$ mutant displayed predominantly yeast phase growth in low ammonium media. Such morphological defect of ${\Delta}gst2$ mutants was not rescued by overexpression of Mep2p, Cph1p, or Efg1p, but was rescued by either overexpression of a hyperactive $RAS1^{G13V}$ allele or through exogenous addition of cyclic AMP. In addition, the ${\Delta}gst2$ mutants had lower levels of RAS1 transcripts than wild-type cells under conditions of nitrogen starvation. These results were consistent with the Ras1-cAMP pathway as a possible downstream target of Gst2p. These findings suggest that Gst2p is a significant component of nitrogen starvation-induced filamentation in C. albicans.

• Biomolecules & Therapeutics
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• v.29 no.6
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• pp.643-649
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• 2021

Literature has revealed that the delta opioid receptor (DOR) exhibited diverse pharmacological effects on neuron and skin. In the present study, we have investigated whether the activation of DOR has hair-growth promotion effects. Compared with other opioid receptor, DOR was highly expressed in epidermal component of hair follicle in human and rodents. The expression of DOR was high in the anagen phase, but it was low in the catagen and telogen phases during mouse hair cycle. Topical application of UFP-512, a specific DOR agonist, significantly accelerated the induction of the anagen in C₃H mice. Topical application of UFP-512 also increased the hair length in hair organ cultures and promoted the proliferation and the migration of outer root sheath (ORS) cells. Similarly, pharmacological inhibition of DOR by naltrindole significantly inhibited the anagen transition process and decreased hair length in hair organ cultures. Thus, we further examined whether Wnt/β-catenin pathway was related to the effects of DOR on hair growth. We found that Wnt/β-catenin pathway was activated by UFP-512 and siRNA for β-catenin attenuated the UFP-512 induced proliferation and migration of ORS cells. Collectively, result established that DOR was involved in hair cycle regulation, and that DOR agonists such as UFP-512 should be developed for novel hair-loss treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.396-400
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• 1998

The physical properties of KLN single crystals very significantly according to the $Nb_2O_5$ content in grown crystal, therefore, it is very important to control the composition of KLN single crystals. In this study, KLN single crystals of high content $Nb_2O_5$ were grown by temperature fluctuation and TSSG (Top-seeded solution growth) methods with increasing the $Nb_2O_5$ content of starting solution. To investigate the existence of defect due to the increase of $Nb_2O_5$ content, dielectric and optical properties were measured. Due to the increase of defects in grown KLN single crystal, the shift of cutoff-frequency to lower energy and a broad Curie range, which shows the DPT (diffuse phase transition) characteristics, were observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.544-549
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• 1998

The single crystal of $KMgCl_3$ was grown in Ar atmosphere by Czochralski method for the first time. For the stoichiometric composition, $K_2MgCl_4$ crystal was obtained, and the nonstoichiometric method was used for the $KMgCl_3$ crystal growth. The phase transition sequences of $KMgCl_3$ were investigated by the DTA, DSC and the ferroelastic properties by using the high temperature polarizing microscope and the thermomechanical system. The temperature dependences of the ferroelastic domains and the spontaneous strain obtained from the stress-strain hysteresis loops were analyzed.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.486-493
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• 2001

Partially stabilized zirconia (PSZ) is an attractive material for thermal barrier coating. Zirconia exists in three crystallographic phases: cubic, tetragonal and monoclinic. Especially, the phase transformation of tetragonal phase to monoclinic phase accompanies significant volume expansion, so this transition generally results in cracking and contributes to the failure of the TBC system. Both the plasma sprayed ZrO$_2$-8Y$_2$O$_3$ (YSZ) coat and the ZrO$_2$,-25CeO$_2$,-2.5Y$_2$O$_3$ (CYSZ) coat are isothermally heat -treated at 130$0^{\circ}C$ and 150$0^{\circ}C$ for 100hr and cooled at different cooling rates. The monoclinic phase is not discovered in all the CYSZ annealed at 130$0^{\circ}C$ and 150$0^{\circ}C$. In the 150$0^{\circ}C$ heat-treated specimens, the YSZ contains some monoclinic phase while none exists in the 130$0^{\circ}C$ heat-treated YSZ coat. For the YSZ, the different phase transformation behaviors at the two temperatures are due to the stabilizer concentration of high temperature phases and grain growth. For the YSZ with 150$0^{\circ}C$-100hr annealing, the amount of monoclinic phase increased with the slower cooling rate. The extra oxygen vacancy, thermal stress, and c to t'phase transformation might suppress the t to m martensitic phase transformation.