• 제목/요약/키워드: transition metal

검색결과 1,212건 처리시간 0.032초

전이금속을 함침한 γ-Al2O3 촉매의 Toluene 분해 (Decomposition of Toluene by γ-Al2O3 Catalysts Impregnated with Transition Metal)

  • 최성우;이철규
    • 한국환경과학회지
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    • 제22권8호
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    • pp.945-951
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    • 2013
  • Alumina-supported catalysts containing different transition metals such as Cu, Cr, Mn, Zn, Co, W were investigated for their activity in the selective oxidation of toluene. Catalytic oxidation of toluene was investigated at atmospheric pressure in a fixed bed flow reactor system over transition metals with $Al_2O_3$ catalyst. The result showed the order of catalytic activities for the complete oxidation of toluene was Mn > Cu> Cr> Co> W> Zn for 5wt.% transition $metals/Al_2O_3$. $Mn/Al_2O_3$ catalysts containing different amount of Mn were characterized by X-ray diffraction spectroscopy for decision of loading amount of metal to alumina. 5 wt.%$Mn/Al_2O_3$ catalyst exhibits the highest catalytic activity, over which the toluene conversion was up to 90% at a temperature of $289^{\circ}C$.

Resistive Switching Properties of N and F co-doped ZnO

  • Kim, Minjae;Kang, Kyung-Mun;Wang, Yue;Chabungbam, Akendra Singh;Kim, Dong-eun;Kim, Hyung Nam;Park, Hyung-Ho
    • 마이크로전자및패키징학회지
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    • 제29권2호
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    • pp.53-58
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    • 2022
  • One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

Magnetic Properties of Carbon Chains Doped with 4d Transition Metals

  • Jang, Y.R.;Lee, J.I.
    • Journal of Magnetics
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    • 제13권1호
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    • pp.7-10
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    • 2008
  • The structural and magnetic properties of functionalized carbon chains doped with 4d transition metals, such as Ru, Rh, and Pd, were investigated using the full-potential linearized augmented plane wave (FLAPW) method. The carbon nanowire doped with Ru exhibited a ferromagnetic ground state with a sizable magnetic moment, while those doped with Rh and Pd had nonmagnetic ground states. For the Ru-doped chain, the density of states at the Fermi level showed large spin polarization, which suggests that the doped nanowire could be used for spintronic applications.

Interaction of the Post-transition Metal Ions and New Macrocycles in Solution

  • Jung, Oh-Jin
    • Bulletin of the Korean Chemical Society
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    • 제14권6호
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    • pp.687-691
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    • 1993
  • Complexation of $Cd^{2+},\;Pb^{2+}\;and\;Hg^{2+}$ ions with four cryptands were studied by potentiometry and solution calorimetry in various weight percent methanol-aqueous solvent at 25${\circ}$C under $CO_2$free nitrogen atmosphere. The stabilities of the complexes were dependent on the cavity size of macrocycles. The $Hg^{2+}$ ion stability constants are higher than those of $Cd^{2+}\;and\;Pb^{2+}$ ion. All the cryptands formed complexes having 1 : 1 (metal to ligand) mole-ratio except for $Hg^{2+}-L_1$ (cryptand 1,2b: 3,5-benzo-9,14,17-trioxa-1,7-diazabicyclo-(8,5,5) heptadecane) and $Cd^{2+}-L_2$ (cryptand 2,2b: 3,5-benzo-10,13,18,21-tetraoxa-1,7-diazabicyclo (8,5,5) eicosane) complexes. $Hg^{2+}-L_1$ complex was a sandwitch type, and the $Cd^{2+}-L_2$ complex showed two stepwise reactions. Thermodynamic parameters of the $Cd^{2+}-L_2$ complex were $6.08(log\;K_1)$, -7.28 Kcal/mol $({\Delta}H_1)$, and $4.78\;(log\;K_2)$, -4.62 Kcal/mol $({\Delta}H_2)$, respectively, for 1 : 1 and 2: 1 mole-ratio. The sequences of the selectivity were increased in the order of $Hg^{2+}\;>Pb^{2+}\;>Cd^{2+}$ ion for $L_3\;and\;L_4$ macrocycles, and the $L_2$-macrocycle has a selectivity for $Cd^{2+}$ ion relative to $Zn^{2+},\;Ni^{2+},\;Pb^{2+}\;and\;Hg^{2+}$ ions. Thus, it is expected that the $L_2$ can be used as carrier for seperation of the post transition metals by macrocycles-mediated liquid membrane because $L_2$ is not soluble in water, and the difference of stability constants of the metal complexes with $L_2$ are large as compared with the other transition metal complexes. The $^1H\;and\;^{13}C-NMR studies indicated that the nitrogen atoms of cryptands have greater affinity to the post transition metal ions than the oxygen atoms, and that the planarities of the macrocycles were lost by complexation with the metal ions because of the perturbation of ring current of benzene molecule attached to macrocycles and counter-anions.

화염법에 의한 천이금속 첨가 이산화티타늄 나노분말의 제조 (Fabrication of Transition-metal-incorporated TiO2 Nanopowder by Flame Synthesis)

  • 박훈;지현석;이승용;안재평;이덕열;박종구
    • 한국분말재료학회지
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    • 제12권6호
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    • pp.399-405
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    • 2005
  • Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

Preparation and Pore-Characteristics Control of Nano-Porous Materials using Organometallic Building Blocks

  • Oh, Gyu-Hwan;Park, Chong-Rae
    • Carbon letters
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    • 제4권1호
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    • pp.1-9
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    • 2003
  • Recently, the control of pore-characteristics of nano-porous materials has been studied extensively because of their unique applications, which includes size-selective separation, gas adsorption/storage, heterogeneous catalysis, etc. The most widely adopted techniques for controlling pore characteristics include the utilization of pillar effect by metal oxide and of templates such as zeolites. More recently, coordination polymers constructed by transition metal ions and bridging organic ligands have afforded new types of nano-porous materials, porous metal-organic framework(porous MOF), with high degree and uniformity of porosity. The pore characteristics of these porous MOFs can be designed by controlling the coordination number and geometry of selected metal, e.g transition metal and rare-earth metal, and the size, rigidity, and coordination site of ligand. The synthesis of porous MOF by the assembly of metal ions with di-, tri-, and poly-topic N-bound organic linkers such as 4,4'-bipyridine(BPY) or multidentate linkers such as carboxylates, which allow for the formation of more rigid frameworks due to their ability to aggregate metal ions into M-O-C cluster, have been reported. Other porous MOF from co-ligand system or the ligand with both C-O and C-N type linkage can afford to control the shape and size of pores. Furthermore, for the rigidity and thermal stability of porous MOF, ring-type ligand such as porphyrin derivatives and ligands with ability of secondary bonding such as hydrogen and ionic bonding have been studied.

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전기장 광화학 증착법에 의한 직접패턴 비정질 FeOx 박막의 제조 및 저항변화 특성 (Electric-field Assisted Photochemical Metal Organic Deposition for Forming-less Resistive Switching Device)

  • 김수민;이홍섭
    • 마이크로전자및패키징학회지
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    • 제27권4호
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    • pp.77-81
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    • 2020
  • Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.

Fabrication, temperature-dependent local structural and electrical properties of VO2 thin films

  • Jin, Zhenlan;Hwang, In-Hui;Park, Chang-In;Han, Sang-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.169.2-169.2
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    • 2015
  • $VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.

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