• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.11
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• pp.69-76
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• 2010

From the present paper we researched about the design of 4-Way Wilkinson divider with waveguide to stripline transition which used to split the LO signal with equi-amplitude and equi-phase in the X-Band Monopulse radar RF front-end. The monopulse radar front end operating in the X-Band is composed of 3 waveguide reception mixers which down convert sum, azimuth and elevation signal to IF and one SSB waveguide mixers which generate X-Band test signal. It is required the 4-way divider with low loss, equi amplitude and equiphase splitting the LO signal to provide the LO signal to each mixer consisting RF frontend. In this paper we designed and fabricated the 4-Way Wilkinson divider with waveguide transition to divide the LO signal into equi-amplitude and equi-phase. The fabricated Wilkinson divider have the insertion loss 6.8dB, VSWR 1.06~1.28, and phase balance maximum 4.5degree for each output ports.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.19.2-19.2
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• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.2
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• pp.27-32
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• 2018

In this paper, W-band transceiver module for compact radar has been designed and fabricated. Utilizing proposed microstrip-to-waveguide transition, the error between design and implementation is reduced. The proposed transition provides less than 1 dB insertion loss per transition and reliability for fabrication. In order to apply compact radar with dual-polarized monopulse directly, W-band transmitter with 28 dBm output power is designed and developed. Also, 6 channels of receiver module with low noise figure 13.5 dB and maximum 17 dBm input P1dB is developed. Proposed W-band transceiver module is expected compact radar application for dual-polarized monopulse signal processing system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.9
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• pp.722-728
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• 1990

A comppact waveguide to microstrip transition to be used for measurements of the performances of the U-band MMIC power amplifier is designed and fabricated. A Tchebyscheff ${\lambda}$/4 impedence transformer is adopted as an impedence converter of the transition. The designed transition is optimized to get Su less then -28dB over the 40-to-48GHZ band using Supper Compact program. The measured results shows that insertion loss and return loss are typically 0.3 and 25dB respectively over 40-to-47GHz.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.1
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• pp.19-24
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• 2014

In this work, a compact patch antenna based on a low temperature cofired ceramic (LTCC) has been presented for V-band system-on-package (SoP) applications. In order to integrate it with transceiver block, a waveguide (W/G) to embedded microstrip line (eMSL) vertical transition was designed using slot-fed double stacked patch antennas for easy assembly and wide bandwidth. The $2{\times}2$ patch antenna integrating the transition was designed and fabricated in the 5-layer LTCC dielectrics. The whole size of the fabricated antenna including the $2{\times}2$ patches, transition and W/G was $20{\times}24{\times}5.39mm^3$. The fabricated antenna has achieved a 10 dB impedance bandwidth of 2.45 GHz from 61 to 63.45 GHz.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.153-158
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• 2012

The hydrogenation of $AlB_2$-type BaGaGe exhibits a metal to insulator (MI) transition, inducing a puckering distortion of the original hexagonal [GaGe] layers. We investigate the electronic structure changes associated with the hydrogen-induced MI transition, using extended H$\ddot{u}$ckel tight-binding band calculations. The results indicate that hydrogen incorporation in the precursor BaGaGe is characterized by an antibonding interaction of $\pi$ on GaGe with hydrogen 1s and the second-order mixing of the singly occupied antibonding $\pi^*$ orbital into it, through Ga-H bond formation. As a result, the fully occupied bonding $\pi$ band in BaGaGe changes to a weakly dispersive band with Ge pz (lone pair) character in the hydride, which becomes located just below the Fermi level. The Ga-Ge bonds within a layered polyanion are slightly weakened by hydrogen incorporation. A rationale for this is given.

• Journal of the Korean Chemical Society
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• v.7 no.3
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• pp.197-202
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• 1963

The ${\alpha}-and\;{\beta}$-isomer of 4-nitroazoxybenzenes have been separated by liquid chromatography and their U.V. spectra were examined. The n${\to}{\pi}^{\ast}$ transition band of the compounds did not appear, likewise the cases of other compounds of the series. Transition band of the new isomer were as usual as those of other azoxy-compounds, whereas the ${\pi}{\to}{\pi}^{\ast}$ transition band of the other isomer which is reported in the literature shown peculier hypochromic shift and hypochromic effect. From the spectroscopic point of view it is very likely that the new isomer (m.p. $184-5^{\circ}C$) is ${\alpha}$-isomer and the other one (m.p. $152^{circ}C$) is ${\beta}$-isomer contrary to the literature.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.1
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• pp.43-47
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• 2015

In this work, a broadband microstrip (MSL) - to - waveguide (WR12) transition has been presented for millimeter-wave module applications. For improvement of a bandwidth, the radial MSL electrical-probe is designed on the low-loss organic dielectric substrate. The designed and tested characteristics of the proposed transition are characterized in terms of an insertion and return loss. Considering the loss contribution of the cable adapter and waveguide transition for the measurement, the proposed transition loss can be analyzed as -1.88 and -2.01 dB per a transition at 70 and 80 GHz, respectively. The bandwidth of the proposed transition for reflection at -10 dB is 26 GHz at all test frequencies from 67 to 95 GHz. Compared to the state-of-the-art results, improvement of 8.3 % is achieved for the operation bandwidth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.