• 한국통신학회논문지
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• 제23권7호
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• pp.1770-1776
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• 1998

밀리미터파 대역에서 동축선로-마이크로스트립 변환구조가 지니는 여러 가지 문제점을 극복하기 위해서 antipodal finline을 이용하는 구형 도파관-마이크로스트립 변환구조를 설계, 제작하였다. 반복 실험을 통한 실험적 최적화 및 수치해석을 통한 해석적 최적화 과정을 통해 작은 삽입손실 갖는 변환구조를 설계하였다. 실험적, 해석적으로 최적화된 변환구조는 Ka-band(26.5 - 400Hz)에서 변환구조당 0.3 -0.4 dB의 작은 삽입손실을 나타냈다. Finline 변환 구조를 사용하는 경우, 중요 설계변수가 기판상에 있으므로 재현성이 뛰어나며 정밀한 금속가공이 필요치 않아 동 축선로-마이크로스트립 변환구조의 문제점을 극복할 수 있었다. 또한, 기존의 임피던스 변환기를 개선시키기 위해 새롭게 지수함수 유전체 임피던스 변환기를 시도하였으며 이를 통하여 0.54dB 정도의 삽입손실을 개선시켰다.

• 전기학회논문지
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• 제66권3호
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• pp.557-562
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• 2017

In this paper, we show the design of a rotary joint transition for the X-band channel in a rotatable microwave communication system. The transition seems complicated to make a channel between two coaxial cables through a cylindrical waveguide. To make a broad-band performance in the X-band with low insertion loss and return loss given the constraint on the length and radius of this complicated-looking cylindrical structure, Genetic Algorithm optimization is adopted to check the validity of an intensive parametric study in the design. The structure is fabricated and tested to show how valid the design method is as well as good frequency responses.

• 센서학회지
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• 제28권4호
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• pp.262-265
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• 2019

The effect of inter-band transition on surface plasmon resonance in gold thin film was investigated. We induced localized inter-band transition in the film by using incident light on its surface from a green laser (532 nm) source, and the surface plasmon resonance for inter-band transition was investigated at different wavelengths. It was determined that the reflectivity of blue light (450 nm) was significantly reduced in the region where the green laser was incident. We demonstrated that this decrease is mainly due to the coupling between the blue light and the surface plasmon resonance of excited electrons in higher energy states, based on experimental results for the incident and polarization angle-dependent reflectivity of the blue light.

• ETRI Journal
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• 제33권6호
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• pp.981-984
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• 2011

A novel lowpass filter with a very sharp transition band and wide stopband is proposed. The proposed filter is based on T-shaped patches which are etched in symmetrical structures and folded open stub. To obtain a wide stopband, we have used stub loaded semi-circle stepped-impedance structures. By designing the resonator with high inductance and capacitance, a very sharp transition band is achieved. The proposed filter has a 3-dB cutoff frequency at 2.37 GHz and a 40-dB rejection at 2.44 GHz. The stopband with an attenuation level better than -13.2 dB is up from 2.4 GHz to 16 GHz, and consequently we have reached the high and wide rejection in stopband with compact size. Good agreements between the simulated and the measured results are presented.

• 전기학회논문지
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• 제67권2호
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• pp.255-260
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• 2018

This study is focusing on the trade-offs between the passband ripples and transition bands of the Chebyshev BPF, which is converted by using the Chebyshev LPF that is well known as a proto-type analog filter. It is also focusing on the trade-offs between the passband ripples and transition bands of the cascading Chebyshev BPF, as well as, the trade-offs between the two BPFs. The study finds the frequency responses of the proto-type analog LPF, the Chebyshev BPF and the cascading Chebyshev BPF. The study shows the results as comparative analysis tables. The study designs the 10th Chebyshev BPF in order to analyze it easily. The simulation results show that the Chebyshev BPF decreases about 55% of the transition band for the -2.5[dB] passband ripple comparing to the -0.5[dB] passband ripple. This study shows the effectiveness and economic feasibility in the restricted frequency communication environment for the decrease of the transition band as providing the passband ripple margin.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.378.2-378.2
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• 2014

We have investigated optical characteristics of $p-Ge_{0.99}Sn_{0.01}$ and Ge films grown on Si substrates using photoreflectance (PR) spectroscopy. The $Ge_{0.99}Sn_{0.01}$ and Ge films were grown by using an ultra-high vacuum chemical vapor deposition and molecular beam epitaxy methods, respectively. PR spectra were measured at 25 K and an extended InGaAs detector was used. By comparing $Ge_{0.99}Sn_{0.01}/Si$ and Ge/Si spectra, we observed the signals related to direct transition and split-off band of $Ge_{0.99}Sn_{0.01}$. The transition energies of $Ge_{0.99}Sn_{0.01}$ and Ge films were approximately 0.74 and 0.84 eV, respectively. Considering the shift of split-off band transition of $Ge_{0.99}Sn_{0.01}$, we suppose that the transition at 0.74 eV is attributed to direct transition between ${\Gamma}$ band and valence band. The temperature- and excitation power-dependent PR spectra were also measured.

• 대한전자공학회논문지TC
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• 제45권7호
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• pp.67-71
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• 2008

본 논문에서는 Ka 대역에서 동작하는 송수신기에 쉽게 집적화 할 수 있는 프로브 구조를 이용한 도파관-마이크로스트립 트랜지션을 설계 및 제작하였다. 도파관-마이크로스트립 트랜지션은 프로브, 인덕턴스 선로, ${\lambda}/4$ 임피던스 변환기, 그리고 $50{\Omega}$ 마이크로스트립 선로로 구성되어있으며, 각 구성 요소들의 특성 임피던스 및 길이를 시뮬레이션을 통해 최적화하였다. 제작된 트랜지션의 측정결과, $30{\sim}40GHz$ 대역 내에서 평균 1.3 dB의 삽입손실 특성, 14 dB이하의 입출력 반사 손실특성을 나타내었다. 마이크로스트립 선로 및 입출력 도파관의 손실을 고려하여 하나의 변환 구조 당 삽입 손실은 $0.5{\sim}0.6dB$ 정도이다.

• 한국전자파학회논문지
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• 제19권4호
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• pp.391-396
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• 2008

본 논문에서는 NRD 도파관 내에 표준 도파관에 대한 트랜지션 기능이 내장된 새로운 형태의 구형 도파관-NRD 도파관 트랜지션을 제안하였다. 새롭게 제안된 구형 도파관-NRD 도파관 트랜지션은 NRD 도파관 입출력측의 기구물 벽 두께와 개구부의 폭을 이용하여 구현된다. 벽 두께의 경우, NRD 도파관 관내 파장의 절반(${\lambda}_g/2$)과 거의 동일하며, 개구부의 폭은 NRD 도파관과 체결되는 표준 도파관의 넓은 변의 길이와 거의 일치한다. 이러한 원리는 주파수 대역과 무관하게 적용 가능하며, 본 논문에서는 38 GHz 대역에서 구형 도파관-NRD 도파관 트랜지션을 제작하여 타당성을 확인하였다. 38 GHz 대에서 제작된 구형 도파관-NRD 도파관 트랜지션은 back-to-back 구조에서 0.4 dB 이하의 삽입 손실과 20 dB 이하의 반사 손실을 갖는다.

• ETRI Journal
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• 제35권3호
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• pp.538-541
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• 2013

A compact microstrip lowpass filter (LPF) with an elliptic function response is proposed. A high equivalent capacitance and inductance between the structures of the resonator result in the sharp transition band of 0.04 GHz from 4 GHz to 4.04 GHz with an attenuation level of -3 dB and -20 dB, respectively. To improve the LPF rejection band, multiple open stubs are connected to the proposed resonator. A filter with a 3-dB cut-off frequency at 4 GHz is designed, fabricated, and measured, and agreement between the measured and simulated results is achieved. The results show that a stopband bandwidth of 131% with a suppression level better than -20 dB is obtained while achieving a compact size with a wide stopband.

• International Journal of Advanced Culture Technology
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• 제7권4호
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• pp.236-241
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• 2019

This paper will read about a multichannel frequency-modulated continuous wave (FMCW) radar sensor with switching transmit (TX) antennas is developed at W-band. To achieve a high angular resolution, a uniform linear array consisting of 5 switching-TX and 12 receive (RX) antennas is employed with the digital beamforming technique. The overall radar front-end module comprises a W-band transceiver and TX/RX antennas. A multichannel transceiver module consists of 5 up-conversion and 12 down-conversion channels, where one of the TX channels is sequentially switched ON. For developing transmitter, we developed an HPA (high power amplified) MMIC chip for W-band radar system and fabricated a transmitter module using this chip. In order to develop the W-band transmitter, we analyzed the important antenna transition structure from HPA MMIC line to W/G (Waveguide)antenna via M/S(microstrip) and fabricated it with 5 transmission channels. As a result, the output power of the transmitter was within 1 dB of the error range after analysis and measurement under normal temperature and environmental conditions.