• Title/Summary/Keyword: transition band

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Design and fabrication of rectangular waveguide-to-microstrip transition at Ka-band (Ka-band에서의 구형 도파관-마이크로스트립 변환구조의 설계 및 제작에 관한 연구)

  • 정진호;권영우;장영춘;천창율
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.23 no.7
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    • pp.1770-1776
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    • 1998
  • This paper presents a waveguide-to-mircostrip transition at Ka-band using antipodal finlines. Critical design parameters were identified with the help of theoretical analysis. Experimental optimization was performed together with 3-D FEM analysis in an effort to find optimum dimensions of the transition. In addition to the conventional antipodal finline transition, a new dielectric impedance transformer was introduced to further reduce the insertion loss. Optimized waveguide-to-microstrip transition showed an insertion loss of 0.3~0.4dB/transition at Ka-band. This transition provides superior reproducibility and better performance than conventional coaxcable-to-microstrip transition.

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The Band-Broadening Design of the Rotary Joint Transition for the X-Band Microwave Channel (X밴드 고주파 채널용 로터리 조인트 천이구조의 대역확장 설계)

  • Kim, Siok;Lee, Changhyeong;Han, Dajung;Roh, Donsuk;Kahng, Sungtek
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.3
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    • pp.557-562
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    • 2017
  • In this paper, we show the design of a rotary joint transition for the X-band channel in a rotatable microwave communication system. The transition seems complicated to make a channel between two coaxial cables through a cylindrical waveguide. To make a broad-band performance in the X-band with low insertion loss and return loss given the constraint on the length and radius of this complicated-looking cylindrical structure, Genetic Algorithm optimization is adopted to check the validity of an intensive parametric study in the design. The structure is fabricated and tested to show how valid the design method is as well as good frequency responses.

Interaction Between Surface Plasmon Resonance and Inter-band Transition in Gold Thin Film (금 박막에서 표면 플라즈몬 공명과 국소적 밴드 간 천이의 상호작용)

  • Kang, Daekyung;Kumar, Marredi Bharath;Adeshina, Mohammad Awwal;Choi, Bongjun;Park, Jonghoo
    • Journal of Sensor Science and Technology
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    • v.28 no.4
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    • pp.262-265
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    • 2019
  • The effect of inter-band transition on surface plasmon resonance in gold thin film was investigated. We induced localized inter-band transition in the film by using incident light on its surface from a green laser (532 nm) source, and the surface plasmon resonance for inter-band transition was investigated at different wavelengths. It was determined that the reflectivity of blue light (450 nm) was significantly reduced in the region where the green laser was incident. We demonstrated that this decrease is mainly due to the coupling between the blue light and the surface plasmon resonance of excited electrons in higher energy states, based on experimental results for the incident and polarization angle-dependent reflectivity of the blue light.

Microstrip Lowpass Filter with Very Sharp Transition Band and Wide Stopband

  • Hayati, Mohsen;Sheikhi, Akram
    • ETRI Journal
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    • v.33 no.6
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    • pp.981-984
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    • 2011
  • A novel lowpass filter with a very sharp transition band and wide stopband is proposed. The proposed filter is based on T-shaped patches which are etched in symmetrical structures and folded open stub. To obtain a wide stopband, we have used stub loaded semi-circle stepped-impedance structures. By designing the resonator with high inductance and capacitance, a very sharp transition band is achieved. The proposed filter has a 3-dB cutoff frequency at 2.37 GHz and a 40-dB rejection at 2.44 GHz. The stopband with an attenuation level better than -13.2 dB is up from 2.4 GHz to 16 GHz, and consequently we have reached the high and wide rejection in stopband with compact size. Good agreements between the simulated and the measured results are presented.

Trade-offs Between the Ripple and the Transition Band for the Chebyshev BPF and the Cascading Chebyshev BPF (Chebyshev BPF와 종속 Chebyshev BPF의 리플-천이대역 Trade-offs)

  • Shin, Seung-Sik;You, Chi-hyung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.2
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    • pp.255-260
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    • 2018
  • This study is focusing on the trade-offs between the passband ripples and transition bands of the Chebyshev BPF, which is converted by using the Chebyshev LPF that is well known as a proto-type analog filter. It is also focusing on the trade-offs between the passband ripples and transition bands of the cascading Chebyshev BPF, as well as, the trade-offs between the two BPFs. The study finds the frequency responses of the proto-type analog LPF, the Chebyshev BPF and the cascading Chebyshev BPF. The study shows the results as comparative analysis tables. The study designs the 10th Chebyshev BPF in order to analyze it easily. The simulation results show that the Chebyshev BPF decreases about 55% of the transition band for the -2.5[dB] passband ripple comparing to the -0.5[dB] passband ripple. This study shows the effectiveness and economic feasibility in the restricted frequency communication environment for the decrease of the transition band as providing the passband ripple margin.

Optical Characteristics of Ge0.99Sn0.01/Si and Ge/Si Using Photoreflectance Spectroscopy

  • Jo, Hyun-Jun;Geun, So Mo;Kim, Jong Su;Ryu, Mee-Yi;Yeo, Yung Kee;Kouvetakis, J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.378.2-378.2
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    • 2014
  • We have investigated optical characteristics of $p-Ge_{0.99}Sn_{0.01}$ and Ge films grown on Si substrates using photoreflectance (PR) spectroscopy. The $Ge_{0.99}Sn_{0.01}$ and Ge films were grown by using an ultra-high vacuum chemical vapor deposition and molecular beam epitaxy methods, respectively. PR spectra were measured at 25 K and an extended InGaAs detector was used. By comparing $Ge_{0.99}Sn_{0.01}/Si$ and Ge/Si spectra, we observed the signals related to direct transition and split-off band of $Ge_{0.99}Sn_{0.01}$. The transition energies of $Ge_{0.99}Sn_{0.01}$ and Ge films were approximately 0.74 and 0.84 eV, respectively. Considering the shift of split-off band transition of $Ge_{0.99}Sn_{0.01}$, we suppose that the transition at 0.74 eV is attributed to direct transition between ${\Gamma}$ band and valence band. The temperature- and excitation power-dependent PR spectra were also measured.

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Design and Fabrication of the Ka-band Waveguide to Microstrip Transition using Probe structure (프로브 구조를 이용한 Ka 대역 도파관-마이크로스트립 트랜지션의 설계 및 제작)

  • Kwon, Hyuk-Ja;Lee, Sung-Ju;Jang, Ho-Joon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.7
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    • pp.67-71
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    • 2008
  • We report the waveguide to microstrip transition using probe structure for Ka-band transceiver. The waveguide to microstrip transition is composed of probe, inductive line, ${\lambda}/4$ impedance transformer, and $50{\Omega}$ microstrip line. For design of the transition, we optimized the characteristic impedances and the lengths of the component parts. The fabricated transition exhibits an insertion loss of 1.3 dB and the input/output return losses of below 14 dB between 30 and 40 GHz. The insertion loss of each transition is about $0.5{\sim}0.6dB$, considering the losses in the microstrip line and input/output waveguides.

Rectangular Waveguide-NRD Waveguide Transition having the NRD Waveguide Built-in Structure (NRD 도파관에 내장된 구조를 갖는 구형 도파관-NRD 도파관 트랜지션)

  • Yoo, Young-Geun;Choi, Jae-Ha
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.4
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    • pp.391-396
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    • 2008
  • In this paper, we proposed the new rectangular waveguide-NRD waveguide transition in which the transition function about the standard waveguide is built in within the NRD waveguide ifself. The newly proposed rectangular waveguide-NRD waveguide transition was realized use of NRD waveguide input/output side wall thickness and hole width. In the case of the wall thickness, it was nearly identical with the half of the NRD waveguide guide wavelength and the width of an hole was nearly coincide with the length of the long side of the standard waveguide connected with the NRD waveguide. This kind of the principles is applicable to be unrelated with the frequency band. In this paper, it made in 38 GHz band with the rectangular waveguide-NRD waveguide transition and the feasibility was confirmed. In the back-to-back structure, the rectangular waveguide-NRD waveguide transition manufactured in 38 GHz band has the insertion loss less than 0.4 dB and also has the return loss less than 20 dB.

Microstrip Lowpass Filter with Very SharpTransition Band Using T-Shaped, Patch, and Stepped Impedance Resonators

  • Hayati, Mohsen;Sheikhi, Akram
    • ETRI Journal
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    • v.35 no.3
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    • pp.538-541
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    • 2013
  • A compact microstrip lowpass filter (LPF) with an elliptic function response is proposed. A high equivalent capacitance and inductance between the structures of the resonator result in the sharp transition band of 0.04 GHz from 4 GHz to 4.04 GHz with an attenuation level of -3 dB and -20 dB, respectively. To improve the LPF rejection band, multiple open stubs are connected to the proposed resonator. A filter with a 3-dB cut-off frequency at 4 GHz is designed, fabricated, and measured, and agreement between the measured and simulated results is achieved. The results show that a stopband bandwidth of 131% with a suppression level better than -20 dB is obtained while achieving a compact size with a wide stopband.

HPA MMIC to W/G Antenna Transition Loss Analysis and Development Results of W-band Transmitter Module

  • Kim, Wansik;Jung, Juyong;Lee, Juyoung;Kim, Jongpil
    • International Journal of Advanced Culture Technology
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    • v.7 no.4
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    • pp.236-241
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    • 2019
  • This paper will read about a multichannel frequency-modulated continuous wave (FMCW) radar sensor with switching transmit (TX) antennas is developed at W-band. To achieve a high angular resolution, a uniform linear array consisting of 5 switching-TX and 12 receive (RX) antennas is employed with the digital beamforming technique. The overall radar front-end module comprises a W-band transceiver and TX/RX antennas. A multichannel transceiver module consists of 5 up-conversion and 12 down-conversion channels, where one of the TX channels is sequentially switched ON. For developing transmitter, we developed an HPA (high power amplified) MMIC chip for W-band radar system and fabricated a transmitter module using this chip. In order to develop the W-band transmitter, we analyzed the important antenna transition structure from HPA MMIC line to W/G (Waveguide)antenna via M/S(microstrip) and fabricated it with 5 transmission channels. As a result, the output power of the transmitter was within 1 dB of the error range after analysis and measurement under normal temperature and environmental conditions.