• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권5호
• /
• pp.319-325
• /
• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• 센서학회지
• /
• 제8권3호
• /
• pp.226-231
• /
• 1999

초전성효과를 나타내는 P(VDF/TrFE) 필름을 이용하여 초전형 적외선 센서를 제작하였다. 필름의 VDF와 TrFE의 질량비는 75/25 이며 두께 $25\;{\mu}m$의 분극처리된 것을 사용하였다. 상부전극과 바닥전극의 디자인을 새로이 하여 인체검지용 초전형 적외선 센서로서 더욱 더 간단한 제조공정과 접속방법을 적용하였다. 상부전극과 바닥전극은 알루미늄을 각각 진공 증착시켰으며 $5.5{\sim}14\;{\mu}m$의 적외선 영역대에 반응시키기 위해 필터가 부착된 TO-5에 하우징 하였다. 제작된 적외선 센서는 적외선원 $13{\times}10^{-6}\;W/cm^2$에 대하여 $9.62{\times}10^5\;V/W$의 높은 전압감도를 나타내었으며 NEP (noise equivalent power) 는 $3.95{\times}10^{-7}\;W$, 그리고 specific detectivity $D^*$는 $5.06{\times}10^5\;cm/W$를 나타내었다.

• 한국정보통신학회논문지
• /
• 제19권7호
• /
• pp.1617-1622
• /
• 2015

본 연구에서는 10 nm이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 채널도핑농도 변화에 대한 터널링 전류(tunneling current)의 변화에 대하여 분석하고자 한다. 채널길이가 10 nm이하로 감소하면 차단전류에서 터널링 전류의 비율이 문턱전압이하 영역에서 차지하는 비율이 증가하게 된다. 비록 비대칭 이중게이트 MOSFET가 단채널효과를 감소시키기 위하여 개발되었을지라도 10 nm 이하에서 터널링 전류에 의한 차단전류의 증가는 필연적이다. 본 연구에서는 채널도핑농도의 변화에 대하여 차단전류 중에 터널링 전류의 비율 변화를 계산함으로써 단채널에서 발생하는 터널링 전류의 영향을 관찰하고자 한다. 열방사 전류와 터널링 전류로 구성된 차단전류를 구하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 WKB(Wentzel- Kramers-Brillouin) 근사를 이용하여 터널링 전류를 구하였다. 결과적으로 10 nm이하의 채널길이를 갖는 비대칭 이중게이트 MOSFET에서는 채널도핑농도에 의하여 터널링 전류가 크게 변화하는 것을 알 수 있었다. 특히 채널길이, 채널두께, 상하단 게이트 산화막 및 전압 등의 파라미터에 따라 매우 큰 변화를 보이고 있었다.

• 한국정보통신학회논문지
• /
• 제21권8호
• /
• pp.1465-1470
• /
• 2017

기존의 MOSFET에서는 반전층보다 항상 실리콘 두께가 크기 때문에 드레인유도 장벽감소가 실리콘 두께에 관계없이 산화막 두께 및 채널길이의 함수로 표현되었다. 그러나 10 nm 이하 저도핑 이중게이트 구조에서는 실리콘 두께 전체가 공핍층이 형성되기 때문에 기존의 SPICE 모델을 사용할 수 없게 되었다. 그러므로 이중게이트 MOSFET에 대한 새로운 SPICE 용 드레인유도 장벽감소 모델을 제시하고자 한다. 이를 분석하기 위하여 전위분포와 WKB 근사를 이용하여 열방사 및 터널링 전류를 구하였다. 결과적으로 드레인유도 장벽감소는 상하단 산화막 두께의 합 그리고 실리콘 두께의 2승에 비례하며 채널길이의 3승에 반비례한다는 것을 알 수 있었다. 특히 SPICE 파라미터인 정적 궤환계수가 1과 2사이에서 사용할 수 있어 합당한 파라미터로써 사용할 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제27권12호
• /
• pp.820-824
• /
• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.109-109
• /
• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.182.1-182.1
• /
• 2013

Silver (Ag)는 높은 반사율을 가지고 있어 Top-Emission Organic Light Emitting Diode (T-OLED)의 반사전극으로 사용하기 적합하지만 일함수가 낮은 단점 (4.3 eV)을 가지고 있다. 이런 낮은 일함수를 증가시키기 위하여 Ag 박막 표면을 산화시켜 일함수를 증가시키기 위한 연구가 진행중에 있으며, 이 연구에서는 UV로 $O_3$을 발생시켜 Ag 박막 표면을 산화시키기 위한 연구를 진행하였다. 특히, Ag 박막 표면의 일함수 변화를 측정하기 위하여 SPM (Scanning Probe Microscopy)의 KPFM (Kelvin Probe Force Microscopy) mode를 적용하여 nano 영역에서의 일함수 변화를 surface potential로 측정하여 UV 표면 산화에 의한 표면 일함수 형상을 확인하였다. Ag 박막은 rf magnetron sputter를 사용하여, Si 기판위에 300nm 두께로 증착시켰다. 이후 $O_3$ 발생되는 UV 램프로 Ag 박막 표면 30초 간격으로 최대 5분간 산화시켰으며, 이후 KPFM mode를 사용하여 산화 시간에 따른 Ag 박막 표면의 potential 변화를 측정하였다. 0~3분간 산화된 Ag 박막 표면의 potential은 약 6 mV로 일정하였으나 3분 이후 최대 110 mV까지 급격하게 변화하는 것을 확인할 수 있었다. Ag 박막 표면의 RMS roughness는 UV 산화처리 전0.7 nm였으나, potential이 급격하게 증가하는 시점인 3분 이후 2.83 nm로 약 400% 이상 증가하였다. 이를 통해 $O_3$ 발생 UV 램프로 산화된 Ag 박막의 표면 물성은 처리 시간에 따라 급격히 변하는 것을 확인하였다.

• Applied Science and Convergence Technology
• /
• 제27권5호
• /
• pp.95-99
• /
• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

• Journal of Neurogastroenterology and Motility
• /
• 제24권4호
• /
• pp.512-527
• /
• 2018

This review provides a comprehensive overview of brain imaging studies of the brain-gut interaction in functional gastrointestinal disorders (FGIDs). Functional neuroimaging studies during gut stimulation have shown enhanced brain responses in regions related to sensory processing of the homeostatic condition of the gut (homeostatic afferent) and responses to salience stimuli (salience network), as well as increased and decreased brain activity in the emotional response areas and reduced activation in areas associated with the top-down modulation of visceral afferent signals. Altered central regulation of the endocrine and autonomic nervous responses, the key mediators of the brain-gut axis, has been demonstrated. Studies using resting-state functional magnetic resonance imaging reported abnormal local and global connectivity in the areas related to pain processing and the default mode network (a physiological baseline of brain activity at rest associated with self-awareness and memory) in FGIDs. Structural imaging with brain morphometry and diffusion imaging demonstrated altered gray- and white-matter structures in areas that also showed changes in functional imaging studies, although this requires replication. Molecular imaging by magnetic resonance spectroscopy and positron emission tomography in FGIDs remains relatively sparse. Progress using analytical methods such as machine learning algorithms may shift neuroimaging studies from brain mapping to predicting clinical outcomes. Because several factors contribute to the pathophysiology of FGIDs and because its population is quite heterogeneous, a new model is needed in future studies to assess the importance of the factors and brain functions that are responsible for an optimal homeostatic state.

• 아태비즈니스연구
• /
• 제11권3호
• /
• pp.169-184
• /
• 2020

Purpose - This research is intended to analyze the current status and problems of tax benefits in the R&D sector and suggest ways to improve tax credit for research and manpower development expenses when various countries fiercely develop efforts to enhance national competitiveness through increased investment in R&D Design/methodology/approach - This study will examine the current status of the tax support system for domestic and foreign R&D, and suggest improvement measures to expand research and development activities in the future. Findings - First, a plan may be considered to abolish and perpetuate the sunset deadline for tax credit for research and manpower development expenses as in the case of the United States and Japan. This perpetuation can be a proactive measure to actively support long-term R & D investment in companies facing economic decisions under uncertainty. Second, it should be revised to raise the tax credit rate of large corporations, which are shrinking every year, compared to SMEs, so that both large corporations and SMEs can improve their international competitiveness and secure excellent technologies through R & D. Finally, the target technologies for each new growth engine and source technology should be expanded to various fields, including national cybersecurity enhancement technology, aviation engine technology, carbon emission and global cooling technologies, which are areas of interest in major overseas R&D countries, to help active R&D and investment in these areas. Research implications or Originality - This study can find a contribution in comparing and analyzing the national R&D tax support system and presenting improvement measures at a time when the benefits of tax credit for research and manpower development expenses of large companies are decreasing due to frequent tax law revisions and the government's factors of increasing tax revenues. In addition, recent research and development items and research technologies of foreign countries were analyzed by Nature's top 10 major science and technology issues, and advanced technologies that should be applied to target technology areas by new growth engine and source technology were specifically investigated and presented.