• 제목/요약/키워드: titanium oxide film

검색결과 130건 처리시간 0.023초

Surface Characteristics of Type II Anodized Ti-6Al-4V Alloy for Biomedical Applications

  • 이수원;정태곤;양재웅;정재영;박광민;정용훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.77-77
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    • 2017
  • Titanium and its alloys offer attractive properties in a variety of applications. These are widely used for the field of biomedical implants because of its good biocompatibility and high corrosion resistance. Titanium anodizing is often used in the metal finishing of products, especially those can be used in the medical devices with dense oxide surface. Based on SAE/AMS (Society of Automotive Engineers/Aerospace Material Specification) 2488D, it has the specification for industrial titanium anodizing that have three different types of titanium anodization as following: Type I is used as a coating for elevated temperature forming; Type II is used as an anti-galling coating without additional lubrication or as a pre-treatment for improving adherence of film lubricants; Type III is used as a treatment to produce a spectrum of surface colours on titanium. In this study, we have focused on Type II anodization for the medical (dental and orthopedic) application, the anodized surface was modified with gray color under alkaline electrolyte. The surface characteristics were analyzed with Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), surface roughness, Vickers hardness, three point bending test, biocompatibility, and corrosion (potentiodynamic) test. The Ti-6Al-4V alloy was used for specimen, the anodizing procedure was conducted in alkaline solution (NaOH based, pH>13). Applied voltage was range between 20 V to 40 V until the ampere to be zero. As results, the surface characteristics of anodic oxide layer were analyzed with SEM, the dissecting layer was fabricated with FIB method prior to analyze surface. The surface roughness was measured by arithmetic mean deviation of the roughness profile (Ra). The Vickers hardness was obtained with Vickers hardness tester, indentation was repeated for 5 times on each sample, and the three point bending property was verified by yield load values. In order to determine the corrosion resistance for the corrosion rate, the potentiodynamic test was performed for each specimen. The biological safety assessment was analyzed by cytotoxic and pyrogen test. Through FIB feature of anodic surfaces, the thickness of oxide layer was 1.1 um. The surface roughness, Vickers hardness, bending yield, and corrosion resistance of the anodized specimen were shown higher value than those of non-treated specimen. Also we could verify that there was no significant issues from cytotoxicity and pyrogen test.

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Effect of Additives on the Stress Corrosion Cracking Behavior of Alloy 600 in High Temperature Caustic Solutions

  • Hur, Do Haeng;Kim, Joung Soo;Baek, Jae Sun;Kim, Jung Gu
    • Corrosion Science and Technology
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    • 제3권1호
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    • pp.6-13
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    • 2004
  • The effect of inhibitors on the electrochemical behavior and the stress corrosion cracking resistance of Alloy 600(UNS N06600) was evaluated in 10% sodium hydroxide solution at $315^{\circ}C$. The specimens of a C-ring type for stress corrosion cracking test were polarized at 150 mV above the corrosion potential for 120 hours with and without inhibitors such as titanium oxide, titanium boride and cerium boride. The chemical compositions of the films formed on the crack tip in the C-ring specimens were analyzed using a scanning Auger electron spectroscopy. The cerium boride, the most effective, was observed to decrease the crack propagation rate more than a factor of three compared with that obtained in no inhibitor solution. It was found that the changes of the active-passive transition potentials and the film compositions were related to the resistance to stress corrosion cracking in high temperature caustic solution.

PLD를 사용하여 Ti doped K(Ta,Nb)O3 thin film의 유전특성을 위한 annealing 효과 (The effect of annealing for dielectric properties of Ti doped $K(Ta,Nb)O_3$ thin film using PLD)

  • 구자일;이종호;배형진;이원석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.985-986
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    • 2006
  • The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

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유기염료가 복합화된 타이타니아 박막재료의 이차비선형광학특성에 관한 연구 (Second-Order Nonlinear Optical Properties of Organically Modified Titania Thin Film)

  • 임선진;곽현태;최동훈;박수영;김낙중
    • 한국재료학회지
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    • 제4권4호
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    • pp.466-471
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    • 1994
  • 타이타니움이소프로폭사이드의 가수분해로 타이타니아 졸용액을 제조하고 그 특성을 조사하였다. 용매, 촉매 그리고 물의 양이 졸의 안정도에 미치는 영향을 조\ulcorner고, 서로 다른 온도에서 졸용액의 전단점도를 측정하여 그 각각의 gel time을 알아보았다. 안정한 조성의 졸용액을 이용하여 광학적으로 투명하고 균일한 타이타니아 박막을 제조할 수 있었다. 또한, 이차비선형 활성단을 도입한 후에도 좋은 박막을 제조할 수 있었다. 제조된 박막은 3~5kV, 50~$100^{\circ}C$ 온도범위에서 코로나 분극처리 하였다. 632.8nm He-Ne레이저를 이용하여 측정한 일차 전기 광학 상수, $r_{33}$는 1.5~5pm/V로서 경시 안정성을 나타내었다.

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RF-magnetron sputtering을 이용한 TiIZO 기반의 산화물 반도체에 대한 연구 (Effect of Titanium Addition on Indium Zinc Oxide Thin Film Transistors by RF-magnetron Sputtering)

  • 우상현;임유성;이문석
    • 전자공학회논문지
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    • 제50권7호
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    • pp.115-121
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    • 2013
  • 본 연구에서는 TiInZnO(TiIZO)를 채널층으로 하는 thin film transistors(TFTs)를 제작하였다. TiIZO 층은 InZnO(IZO)와 Ti target을 이용하여 RF-magnetron co-sputtering system 방식으로 상온에서 증착하였으며, 어떠한 열처리도 하지 않았다. Ti의 첨가가 어떠한 영항을 주는지 연구하기 위해 X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) 분석을 시행하였으며, 전기적인 특성을 측정하였다. Ti의 첨가는 Ti target의 rf power 변화에 따라 달리하였다. Ti의 첨가가 전류점멸비에 큰 영향을 주는 것을 확인하였고, 이것은 Ti의 산화력이 In과 Zn보다 뛰어나 산소결함자리의 형성을 억제하기 때문이다. Ti의 rf power가 40W일 때 가장 좋은 특성을 나타냈으며, 전류점멸비, 전자이동도, 문턱전압, subthreshold swing이 각각 $10^5$, 2.09 [$cm^2/V{\cdot}s$]. 2.2 [V], 0.492 [V/dec.]로 측정되었다.

저가의 Ti 박막이 증착된 유리 기판을 사용한 TCO-less 염료감응형 태양전지의 응용 (Fabrication of TCO-less Dye-sensitized Solar Cells by Using Low Cost Ti Layer Deposited Glass Substrate)

  • 정행윤;기현철;구할본
    • 한국전기전자재료학회논문지
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    • 제27권11호
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    • pp.725-729
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    • 2014
  • In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs) was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for the reduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the results showed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of power conversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by 0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by using electrochemical impedance analyzer (EIS).

Effect of a ZnO Buffer Layer on the Structural, Optical and Electrical Properties of TIO/ZnO Bi-layered Films

  • Choe, Su-Hyeon;Park, Yun-Je;Choi, Jin-Young;Kim, Daeil
    • 한국표면공학회지
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    • 제52권6호
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    • pp.289-292
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    • 2019
  • Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.

Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

  • Lee, Byeong Hyeon;Han, Sangmin;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제17권1호
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    • pp.46-49
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    • 2016
  • A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×102 Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm2 V−1s−1, S.S of 0.9 Vdecade−1, and on/off current ratio of 9.7×106 A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

화학기상증착법에 의한$TiO_2$박막의 구조 및 전기적 특성에 관한 연구 (Characterization of Structure and Electrical Properties of $TiO_2$Thin Films Deposited by MOCVD)

  • 최상준;이용의;조해석;김형준
    • 한국재료학회지
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    • 제5권1호
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    • pp.3-11
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    • 1995
  • Titanium oxide$(TiO_{2})$ 박막을 금속 알콕사이드 물질인 $(Ti(OC_3H_7)_4$(titanium isopropoxide)를 이용하여 p-Si(100) 기판위에 상압 화학 기상 증착법으로 증착시켰다. $(TiO_{2})$ 박막의 증착기구는 단순경 계층 이론으로 잘 설명되었으며, 화학반응 지배 기구 영역에서 겉보기 활성화 에너지는 18.2kcal/mol이었다. 증착된 박막은 $250^{\circ}C$이상에서 anatase상의 결정질 박막이었으며, 고온에서 열처리를 했을 경우에 rutile상으로 전이하였다. 박막의 상전이에는 열처리 온도외에도 열처리 시간과 박막의 두께가 영향을 미쳤다. 정전용량-전압특성을 조사해 본 결과 전형적인 MOS 다이오드구조의 특성을 보였으며, 비유전율 상수는 약 80정도였다. 제조한 $(TiO_{2})$ 박막의 열처리 공정 후에는 정전용량이 감소하였으며, 첨가물을 사용한 박막은 열처리 전과 같았다. 이때 $V_{FB}$는 -0.5 ~ 1.5V였다. 전기전도 특성을 알아보기 위하여 전류-전압특성을 조사하였으며 증착된 박막의 전도기구는 hopping mechanism이었다. 전기적 특성을 개선하기 위해서 후열처리 방법과 박막 증착시 Nb, Sr을 첨가하였으며, 모두 누설전류의 감소와 정전파괴전압의 증가를 가져왔다.

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Solution-Processed Metal Oxide Thin Film Nanostructures for Water Splitting Photoelectrodes: A Review

  • Lee, Mi Gyoung;Park, Jong Seong;Jang, Ho Won
    • 한국세라믹학회지
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    • 제55권3호
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    • pp.185-202
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    • 2018
  • Photoelectrochemical (PEC) cells can convert solar energy, the largest potential source of renewable energy, into hydrogen fuel which can be stored, transported, and used on demand. In terms of cost competitiveness compared with fossil fuels, however, both photocatalytic efficiency and cost-effectiveness must be achieved simultaneously. Improvement of cost-effective, scalable, versatile, and eco-friendly fabrication methods has emerged as an urgent mission for PEC cells, and solution-based fabrication methods could be capable of meeting these demands. Herein, we review recent challenges for various nanostructured oxide photoelectrodes fabricated by solution-based processes. Hematite, tungsten oxide, bismuth vanadate, titanium oxide, and copper oxides are the main oxides focused on, and various strategies have been attempted with respect to these photocatalyst materials. The effects of nanostructuring, heterojunctions, and co-catalyst loading on the surface are discussed. Our review introduces notable solution-based processes for water splitting photoelectrodes and gives an outlook on eco-friendly and cost-effective approaches to solar fuel generation and innovative artificial photosynthesis technologies.