• 제목/요약/키워드: titanium oxide film

검색결과 132건 처리시간 0.03초

A.c. Impedance Measurement of CP-Ti in 0.1 M NaOH Solution

  • Moon, Sungmo;Kwon, Mikyung;Kim, Jusuk
    • Journal of Electrochemical Science and Technology
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    • 제3권4호
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    • pp.185-189
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    • 2012
  • A.c. impedances of mechanically polished CP-Ti specimens were measured at open-circuit potential (OCP) with immersion time and under applied anodic potentials between -0.2 and 1 $V_{Ag/AgCl}$ in 0.1 M NaOH solution. Capacitances of native oxide films ($C_{ox,na}$) grown naturally and capacitances of anodic oxide films ($C_{ox,an}$) formed under applied anodic potentials were obtained to examine the growth of native and anodic oxide films in 0.1 M NaOH solution and how to use $C_{ox,na}$ for the surface area measurement of Ti specimen. $1/C_{ox,na}$ and $1/C_{ox,an}$ appeared to be linearly proportional to OCP and applied potential ($E_{app}$), with proportional constants of 0.086 and 0.051 $uF^{-1}\;V^{-1}$, respectively. The $C_{ox,na}$ also appeared to be linearly proportional to geometric surface area of the mechanically polished CP-Ti fixture specimen, with proportional constants of 11.3 and $8.5{\mu}F\;cm^{-2}$ at -0.45 $V_{Ag/AgCl}$ and -0.25 $V_{Ag/AgCl}$ of OCPs, respectively, in 0.1 M NaOH solution. This linear relationship between $C_{ox,na}$ and surface area is suggested to be applicable for the measurement of real surface area of Ti specimen.

전기적착색 $WO_3$ 박막의 투과율과 내구성 (Transmission and Durability of Electrochromic WO3 Thin Films)

  • 이길동
    • 태양에너지
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    • 제19권1호
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    • pp.1-8
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    • 1999
  • Electrochromic $WO_3$ thin films were prepared by electron beam deposition. The transmission and durability of films were investigated. Coloring and bleaching experiments were repeated in an electrolyte of propylene carbonate with 0.6M of $LiClO_4$ by cyclic voltammetry. Spectrophotometer was used to measure the transmission in the degraded films. The 5000 ${\AA}$ thick film was found to be the stable after repeated cycles. The durability of the annealed film also showed improvements over unannealed samples. Tungsten oxide films with titanium content of about $10{\sim}15$ mol% was found to be most stable, undergoing the least degradation during the repeated cycles.

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Plasma Electrolytic Oxidation in Surface Modification of Metals for Electronics

  • Sharma, Mukesh Kumar;Jang, Youngjoo;Kim, Jongmin;Kim, Hyungtae;Jung, Jae Pil
    • Journal of Welding and Joining
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    • 제32권3호
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    • pp.27-33
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    • 2014
  • This paper presents a brief summary on a relatively new plasma aided electrolytic surface treatment process for light metals. A brief discussion regarding the advantages, principle, process parameters and applications of this process is discussed. The process owes its origin to Sluginov who discovered an arc discharge phenomenon in electrolysis in 1880. A similar process was studied and developed by Markov and coworkers in 1970s who successfully deposited an oxide film on aluminium. Several investigation thereafter lead to the establishment of suitable process parameters for deposition of a crystalline oxide film of more than $100{\mu}m$ thickness on the surface of light metals such as aluminium, titanium and magnesium. This process nowadays goes by several names such as plasma electrolytic oxidation (PEO), micro-arc oxidation (MOA), anodic spark deposition (ASD) etc. Several startups and surface treatment companies have taken up the process and deployed it successfully in a range of products, from military grade rifles to common off road sprockets. However, there are certain limitations to this technology such as the formation of an outer porous oxide layer, especially in case of magnesium which displays a Piling Bedworth ratio of less than one and thus an inherent non protective oxide. This can be treated further but adds to the cost of the process. Overall, it can be said the PEO process offers a better solution than the conventional coating processes. It offers advantages considering the fact that he electrolyte used in PEO process is environmental friendly and the temperature control is not as strict as in case of other surface treatment processes.

Preparation of Large Area $TiO_2$ Thin Films by Low Pressure Chemical Vapor Deposition

  • 전병수;이중기;박달근;신세희
    • 한국재료학회지
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    • 제4권8호
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    • pp.861-869
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    • 1994
  • Chemical vapor deposition using titanium tetra isopropoxide(TTIP) was employed to investigate effects of process parameters on the uniformity of $TiO_{2}$this films deposited on Indium Tin Oxide (ITO)coated glass. Deposition experiments were carried out at temperatures ranging from $300^{\circ}C$ to $400^{\circ}C$ under the pressure of 0.5~2 torrin a cold wall reactor which can handle 200mm substrate. It was found that the growth rate of $TiO_{2}$was closely related to the reaction temperature and the ractant gas compositions. Apparent activation energy for the deposition rate was 62.7lkJ/mol in the absence of $O_{2}$ and 100.4kj/mol in the presence of $O_{2}$, respectively. Homogeneous reactions in the gas phase were promoted when the total pressure of the reactor was increased. Variance in the film thickness was less than a few percent, but at high deposition rates film thickness was less uniform. Effects of reaction temperature on $TiO_{2}$ thin film characteristic was investigated with SEM, XRD and AES.

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티타늄 금속 표면 양극산화장치 개발 (Development of Titanium Metal Surface Anodizing Equipment)

  • 양근호;민병운
    • 한국전자통신학회논문지
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    • 제8권9호
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    • pp.1307-1312
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    • 2013
  • 본 논문에서는 알칼리성 또는 산성을 띠는 특정 용액 내에서 전기분해 원리를 이용하여 금속 표면을 산화시켜 절연피막을 형성하는 장치를 개발한다. 기존에는 주로 양극에만 펄스 형태로 전압을 인가하는 단극성(unipolar) 방식이지만 본 논문에서는 H-브리지를 이용하여 양극에 양(+)전압과 음(-)전압을 번갈아 가면서 전압을 공급하는 양극성(bipolar) 장치를 제작하였으며, 금속 시편의 특성에 맞는 다양한 전기적인 조건을 가지고 산화피막을 형성할 수 있는 장치를 개발하였다. 공급전류 가변은 PWM 변조를 이용하였으며, (+)와 (-)의 극성변화는 H-브리지를 이용하여 양극성 펄스전압을 공급할 수 있도록 하였다. 그 결과로써 단극성보다 균일한 기공을 갖는 피막이 형성되었다.

TiO2 Nanotubes Fabricated by Atomic Layer Deposition for Solar Cells

  • Jung, Mi-Hee;Kang, Man-Gu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.161-161
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    • 2011
  • Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.

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Design, Simulation, and Optimization of a Meander Micro Hotplate for Gas Sensors

  • Souhir, Bedoui;Sami, Gomri;Hekmet, Charfeddine Samet;Abdennaceur, Kachouri
    • Transactions on Electrical and Electronic Materials
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    • 제17권4호
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    • pp.189-195
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    • 2016
  • Micro Hotplate (MHP) is the key component in micro-sensors, particularly gas sensors. Indeed, in metal oxide gas sensors MOX, micro-heater is used as a hotplate in order to control the temperature of the sensing layer which should be in the requisite temperature range over the heater area, so as to detect the resistive changes as a function of varying concentration of different gases. Hence, their design is a very important aspect. In this paper, we have presented the design and simulation results of a meander micro heater based on three different materials - platinum, titanium and tungsten. The dielectric membrane size is 1.4 mm × 1.6 mm with a thickness of 1.4 μm. Above the membrane, a meander heating film was deposed with a thickness of 100 nm. In order to optimize the geometry, a comparative study by simulating two different heater thicknesses, then two inter track widths has also been presented. Power consumption and temperature distribution were determined in the micro heater´s structure over a supply voltage of 5, 6, and 7 V.

Evaluation and Comparison of Nanocomposite Gate Insulator for Flexible Thin Film Transistor

  • 김진수;조성원;김도일;황병웅;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.278.1-278.1
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    • 2014
  • Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

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Si and Mg Coatings on the Hydroxyapatite Film Formed Ti-29Nb-xHf Alloys by Plasma Electrolyte Oxidation

  • Park, Seon-Yeong;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2017년도 춘계학술대회 논문집
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    • pp.152-152
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    • 2017
  • Titanium and its alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element,such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}$-stabilizer and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Therefore, in this study, Si and Mg coatings on the hydroxyapatite film formed Ti-29Nb-xHf alloys by plasma electrolyte oxidation has been investigated using several experimental techniques. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. The electrolyte was Si and Mg ions containing calcium acetate monohydrate + calcium glycerophosphate at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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Preparation and Electric Properties of PbTiO$_3$Thin Films by Low-pressure Thermal Plasma Deposition

  • Nagata, Shingo;Wakiya, Naoki;Shinozaki, Kazuo;Mizutani, Nobuyasu
    • The Korean Journal of Ceramics
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    • 제7권1호
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    • pp.20-25
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    • 2001
  • PbTiO$_3$ thin films were prepared by low-pressure thermal plasma deposition on (100)Pt/(100)MgO substrates. Mist of source material in which metal alkoxides are dissolved in 2-methoxyethanol was introduced into plasma through heating furnace and deposited onto substrates at $600^{\circ}C$. As-deposited PbTiO$_3$/Pt/MgO thin film prepared at 1.33$\times$10$^4$ Pa was grown epitaxially, but was consisted of many rectangular shaped grains, with many grain boundaries and it was impossible to measure electric properties. As-deposited film prepared at 1.00$\times$10$^4$ Pa showed weak peaks of X-ray diffraction and the film was not grown epitaxially. On the other hand, the film after annealed at $700^{\circ}C$ showed strong diffraction peaks and epitaxial growth was also observed. For annealed film, moreover, no clear grain boundaries were observed. The value of ${\varepsilon}_r$, tan${\delta}$, Pr and Ec of annealed film were 160, 3.2%, 10.4${\mu}$C.cm$^-2$ and 51.2kV.cm$^-1$, respectively. Since the composition, Pb/Ti, measured by EDS attaching to SEM changed point by point, the distribution of composition in annealed film was investigated and found out several relations between composition and electric properties. At stoichiometric composition, Pr and Ec showed the lowest value and they gradually became large as composition deviated from stoichiometric one. Moreover, the value of ${\varepsilon}_r$ became gradually large as the ratio of Ti became high.

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