• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.114-114
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• 2002

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.34-38
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• 1999

$PbTiO_3$(PT)thin films were prepared by simultaneous of $TiO_2$ and PbO on Si(100) substrate using metaloganic chemical vapor deposition (MOCVD). Titanium tetra-isopropoxide (TTIP) and $Pb(TMHD)_2$were used as source materials. As evaporation temperature and flow rate of TTIP were examined the crystal structure of PT thin films using XRD with setting deposition temperature, flow rate of Pb, and total flow rate of $520^{\circ}C$, 30 sccm, and 750 sccm, respectively. PT thin films could be deposited under 48~$50^{\circ}C$ and 18~22sccm of evaporation temperature and flow rate of TTIP, respectively. It was found that lead, oxygen, and silicon diffused at the iaterface between the film and the substrate.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11a
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• pp.145-150
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• 1996

약 30$0^{\circ}C$, 160 kg/$cm^2$의 원자로냉각재계통에서 사용이 가능한 $^{60}$Co 제거용 고온흡착제를 얻기 위하여, ZrO$_2$를 zirconyl nitrate를 출발물질로 하여 졸-겔법으로, aluminum isopropoxide를 출발 물질로 하여 A1$_2$O$_3$를, aluminum isopropoxide와 titanium tetraisopropoxide를 출발물질로하여 TiO$_2$-A1$_2$O$_3$를, aluminum isopropoxide와 zirconium propoxide를 출발물질로 하여 ZrO$_2$-A1$_2$O$_3$를 금속알콕사이드 가수분해법으로 제조하였다. 제조한 흡착제는 600~140$0^{\circ}C$의 온도로 하소 하였으며, 결정전이, 열적특성, 비표면적 등의 물성변화를 알아보기 위하여 X선회절, 적외선분광분석, 열분석, 전자현미경 관찰, BET 비표면적 등을 측정하였다. 또한, 고온수에서 이들 흡착제의 Co$^{2＋}$ 흡착특성을 autoclave를 이용한 회분식 흡착실험으로 알아보았다. 이들 흡착제 제조시 하소온도에 따른 Co$^{2＋}$ 흡착량, $Al_2$O$_3$ 흡착제 제조시 pH 변화에 따른 Co$^{2＋}$ 흡착량과 TiO$_2$-A1$_2$O$_3$ 흡착제 제조시 TiO$_2$ 함량에 따른 Co$^{2＋}$ 흡착량과 25$0^{\circ}C$의 고온에서 ZrO$_2$와 $Al_2$O$_3$의 표면에 생성된 코발트 화합물을 XPS와 EPMA로 부터 확인하였다.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.159-166
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• 1999

The physical properties and microstructural changes with heat-treatment of opacified silica aerogels doped by TiO2 were investigated. Monolithic SiO2-TiO2 aerogels were prepared by supercritical drying (25$0^{\circ}C$, 1250 psig) of wet gel obtained by adding titanium isopropoxide to prehydrolyzed TEOS-isopropanol solutions. The density and the porosity of SiO2-10 mol% TiO2 aerogels were 0.23 g/㎤ and 90%, respectively. During supercritical drying, the linear shrinkage of aerogels increased with increase in the titanium content an TiO2 was transformed to the anatase phase as well as particls agglomerates led to TiO2 clusters of 100~800 nm dispersed homogeneoulsy in the silica matrix. The IR transmittance of opacified silica aerogels was very low in the region of wavelengths below 8 ${\mu}{\textrm}{m}$ compared with pure silica aerogels and SiO2-TiO2 aerogels showed the high thermal stability of microstructures up to $600^{\circ}C$.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.357-364
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• 2023

Selective catalytic reduction (SCR) is the most effective method for reducing nitrogen oxide emissions, but the operating temperature range of V₂O₅-WO₃/TiO₂ catalysts is narrow (300~400℃). In this study, a new catalyst with an operating temperature range of 200~450℃ was developed. The catalyst poison, ammonium bisulfate, generated during the SCR process can be removed by heating above 350℃. To increase the number of active sites and promote the dispersion of active materials, titanium isopropoxide (TTIP) treatment was performed on the TiO₂ support with various TTIP/TiO₂ mass ratios. Among them, the 5 wt% TTIP loaded catalyst showed improved performance due to higher thermal stability caused by high W dispersion and the formation of V⁵⁺. In addition, the 5 wt% TTIP-loaded catalyst prepared by a one-step co-precipitation method showed greater V-OH and W-OH dispersion and enhanced interactions in contrast to conventional methods, resulting in higher catalytic activity at lower temperatures. This review article aims to provide an accessible explanation for researchers investigating how to improve the surface properties of TiO2 catalysts using TTIP.

• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.130-137
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• 1997

Powders and thin-layers of a hexagonal titanium disulfide phase have been successfully prepared by modifying the sol-gel process. The reaction of titanium isopropoxide with hydrogen sulfide causes the precipitation of a precursor which was converted to the disulfide on heat-treatment in $H_2S$ at various temperatures depending on the solvent adopted, whereas that of titanium 2-methoxyethoxide with $H_2S$ produces a stable solution which was spin-casted onto silicon substrates followed by thermolysis to give thin films. Upon heat-treatment in $H_2S$, the disulfides show interesting morphological variations in the form of their powders and thin films, which were characterized by SEM and X-ray diffractometer.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.328-334
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• 1992

TiO2 sols were prepared by hydrolysis and polymerization of titanium tetra-isopropoxide (TTIP) in the presence of diethanolamine (DEA). The optimal mole ratio of water to TTIP is 2 and the concentration of the TiO2 sol 0.7 M. Golden TiN films without cracks were obtained by dipping Si(110) wafers into the TiO2 sol and followed by nitridation in NH3 at 1100$^{\circ}C$ for 5 h. The TiN films were studied by an optical microscope, DTA, TGA and X-ray analysis.

• YAKHAK HOEJI
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• v.30 no.6
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• pp.329-333
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• 1986

6-[3-(Hydroxymethyl)-2, 3-epoxybutyl]-3, 5-dimethoxyphenol was synthesized by means of the eight steps, such as allylether, Claissen rearrangement, tosylation, oxidation, Wittig reaction, reduction and epoxidation from 3, 5-dimethoxyphenol. The epoxidation of 6-[3- (hydroxymethyl)-2-butenyl]-3,5-dimethoxy phenol using the L-(+)-diethyltartrate(DET), titanium (IV) isopropoxide Ti[(O-iPr)$_4$] and t-butylhydroperoxide(TBHP) is described.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.755-760
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• 1996

Sol-gel processing was used to prepare PZT fibers. Titanium isopropoxide Zirconium n-butoxide and lead acetate trihydrate were used as starting materials and TEA(triethanolamine) was added to form stabilized Pb-Ti-Zr complex alkoxide, Effects of catalysts and various solvents on the state of precursor sol gelation reaction fiber spinnability pyrolysis and crystallization were also investiated.