• 자원리싸이클링
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• 제24권3호
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• pp.51-58
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• 2015

주석도금폐액으로부터 이온교환수지를 사용하여 주석 회수에 대한 연구를 실시하였다. 3종류의 이온교환수지를 사용하여 기초 실험한 결과 tertiary 기능기를 가진 이온교환수지(Lewatit TP 272)는 주석을 흡착하지 못하였고, iminodiacetic기능기를 가진 이온교환수지(Lewatit TP 207)는 주석의 흡착율은 높으나, 회수된 주석용액 내 불순물 함량이 높았다. Ethylhexyl-phosphate의 기능기를 가진 이온교환수지(Lewatit VP OC1026)를 사용한 경우, 주석의 흡착율이 iminodiacetic기능기를 가진 이온교환수지 보다 낮았으나 pH 조절에 따라 회수된 주석용액 내 불순물의 제거가 가능하였다. 또한 이온교환수지에 흡착된 유기물의 경우는 수세를 통해 제거를 함으로써 고순도 주석용액으로 회수가 가능하였다.

• 전기화학회지
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• 제5권2호
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• pp.52-56
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• 2002

졸-겔법을 이용하여 주석산화물을 흑연입자 표면에 도포하고 $400-600^{\circ}C$에서 열처리하여 미세결정구조를 갖는 리튬이온 전지용 주석산화물 전극을 제조하였다. 도포 된 주석산화물의 양은 $2.25 wt\%\~11.1 wt\%$로 조절하여 실험한 결과 주석산 화물의 함량에 따라 방전용량이 증가하고 또한 초기의 비가역 용랑도 증가함을 알 수 있었다. 싸이클에 따른 주석 산화물 전극의 방전용량은 propylene carbonate(PC) 계 전해액에서도 초기 싸이클에서 350mAh/g 이상, 30 싸이클 후 에서는 300mAh/g을 나타낸 반면, 표면개질이 되지 않은 흑연전극의 경우에는 140mAh/g의 방전용량을 나타내었다. 충방전 속도를 C/5에서 C/2로 빠르게 했을 때 주석산화물 전극과 흑연전극의 방전용량은 초기 용량의 $92\%,\;77\%$로 각각 나타났다. 이러한 전극 특성의 향상은 주석산화물이 리튬이온과 반응하여 형성된 리튬 옥사이드$(Li_2O)$부동태 피막이 흑연전극의 탈리 현상을 막고 또한 환원된 주석이 흑연입자간의 전기전도를 원활하게 하여 전극의 전류분포를 향상시키기 때문인 것으로 해석되었다.

• 박물관보존과학
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• 제28권
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• pp.89-108
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• 2022

국립중앙박물관 소장 금속활자는 약 50만자로 앞서 연구된 조선 금속활자에 기초해 갑인자(甲寅字)활자 33점, 을해자(乙亥字)병용한글활자 29점 등 조선 전기 금속활자 62점의 형태 조사, 비중을 측정하고 조성성분을 바탕으로 통계분석하였다. 갑인자활자 33점, 을해자병용한글활자 24점은 2성분계 청동(구리-주석)([A]그룹), 을해자병용 한글활자 5점 중 4점은 3성분계 청동(구리-주석-납)([B]그룹) 1점은 2성분계 청동(구리-주석)([C]그룹)으로 주석 함량이 높다. 본 연구에서 다수의 활자 성분 통계분석을 토대로 조선 후기 임진자(壬辰字)활자와 비교한 결과, 후기 활자는 구리 함량이 낮고 아연, 납 함량이 높은 특징이 있어 조선 전기와 후기 활자의 분류 가능성을 확인하였다.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.26-29
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• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• 대한금속재료학회지
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• 제49권1호
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• pp.17-24
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• 2011

To investigate the relationship between heat treatment in zirconium alloy tubing process and metallurgical characteristics of Zr-1Nb-0.69Sn-0.11Fe alloy tubes, mechanical and oxidation behaviors of tubes heat treated at different temperatures after the final pilgering were investigated. The stress strain curves exhibited the saturation behaviors in all heat treatment conditions ($460{\sim}600^{\circ}C$) in this study with the onset strain of saturation increased with increase of post-pilgering annealing temperature. The strength fell off rapidly with increasing annealing temperature. The ultimate strength of the low tin Zr-1Nb-0.69Sn-0.11Fe alloy with slightly higher iron and oxygen contents in this study was found to be higher than Zr-1Nb-1Sn-0.1Fe alloy. The oxidation experiments in steam condition revealed that the corrosion resistance of low tin Zr-1Nb-0.69Sn-0.11Fe alloy was better than the Zr-1Nb-1Sn-0.1Fe alloy with a higher Sn content. The weight gain of low tin Zr-1Nb-0.69Sn-0.11Fe alloy tubes gradually increased with the increasing annealing temperature possibly due to the decreased Nb content in the matrix because of the formation of ${\beta}-Nb$ particles.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.752-758
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• 2010

The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• 대한치과보철학회지
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• 제27권1호
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• pp.143-179
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• 1989

To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.

• 한국분말재료학회지
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• 제11권6호
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• pp.467-471
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• 2004

In order to fabricate a high density sintered body of ITO, nano-sized ITO powders were synthesized by coprecipitation methods. Aqueous solutions of indium and tin salts were mixed and coprecipitated by changing their pH. Coprecipitated ITO powders possessed 20-30 nm crystallite size and a relatively high BET value ($35m^2/g$), however, aggregation of particles were occurred. Therefore, a novel recrystallization technique was applied in order to eliminate the aggregates. The recrystallized ITO material consists of a little bit larger needlelike crystals, $20nm{\times}80nm$, and it possesses a higher BET value $(57m^{2}/g)$ compared to the plain coprecipitated material $(35m^{2}/g)$. Metastable phase formation and higher content of aggregated particles were observed in the coprecipitated materials. Densification was 95% to 98% complete after 5 hour sintering at $1500^{\circ}C$ for the recrystallized powders while densities of the coprecipitated powders were below 75%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.563-567
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• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.