• 제목/요약/키워드: time-current

검색결과 13,286건 처리시간 0.058초

Robust Deadbeat Current Control Method for Three-Phase Voltage-Source Active Power Filter

  • Nishida, Katsumi;Ahmed, Tarek;Nakaoka, Mutsuo
    • Journal of Power Electronics
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    • 제4권2호
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    • pp.102-111
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    • 2004
  • This paper is concerned with a deadbeat current control implementation of shunt-type three-phase active power filter (APF). Although the one-dimensional deadbeat control method can attain time-optimal response of APF compensating current, one sampling period is actually required fur its settling time. This delay is a serious drawback for this control technique. To cancel such a delay and one more delay caused by DSP execution time, the desired APF compensating current has to be predicted two sampling periods ahead. Therefore an adaptive predictor is adopted for the purpose of both predicting the control error of two sampling periods ahead and bringing the robustness to the deadbeat current control system. By adding the adaptive predictor output as an adjustment term to the reference value of half a source voltage period before, settling time is made short in a transient state. On the other hand, in a steady state, THD (total harmonic distortion) of the utility grid side AC source current can be reduced as much as possible, compared to the case that ideal identification of controlled system could be made.

生物膜 電極反應機를 이용한 廚房廢水 처리 효과 (Effects of Domestic Wastewater Treatment used Biofilm-Electrode Reactor(BER))

  • Noh, Hyun-Woong;Yoon, Oh-Sub
    • 한국환경보건학회지
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    • 제23권1호
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    • pp.43-49
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    • 1997
  • This study was aimed to estimate removal efficiency(%) of BER(Biofilm-Electrode Reactor) and A.S(Activated Sludge) treatments. When were analyzed COD$_{Cr}$, NH$_3$-N and T-P by current density and reaction time, the results were as follows : 1) In BER treatment, the removal efficiency of COD$_{Cr}$ in domestic wastewater was 79-86% when current density was 2.39 mA/dm$2$(15mA)-3.98 mA/dm$^2$(25mA) and reaction time was 48 hr. 2) Removal efficiency of NH$_3$-N was 71-73% when current density was 2.39-3.98 mA/dm$^2$ and reaction time 48 hr. 3) When the reaction time was 48 hr removal efficiency(%) of BER treatment for COD$_{Cr}$, NH$_3$-N and T-P were more excellent than A.S. treatment. And then we prospect that was because activated microorganism colonies attached in biofilm on surface of electrode pannel. Therefore, In order to derive BER treatment efficiency(%) should establish optimum conditions of pH, temp., reaction time, current density and biochemical and electrochemical states.

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Support MOS Capacitor를 이용한 Current Transfer 구조의 전류 메모리 회로 (Current Transfer Structure based Current Memory using Support MOS Capacitor)

  • 김형민;박소연;이대니얼주헌;김성권
    • 한국전자통신학회논문지
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    • 제15권3호
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    • pp.487-494
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    • 2020
  • 본 논문에서는 정적소비전력을 줄이며, 전류 모드 신호처리의 장점을 최대로 올릴 수 있는 전류 메모리 회로 설계를 제안한다. 제안하는 전류 메모리 회로는 기존의 전류 메모리 회로가 갖는 Clock-Feedthrough와 Charge-Injection 등으로 인해 데이터 저장 시간이 길어지면서 전류 전달 오차가 심해지는 문제를 최소화하며, 저전력 동작이 가능한 Current Transfer 구조에 밀러 효과(Miller effect)를 극대화하는 Support MOS Capacitor를 삽입하는 설계로, 저장 시간에 따르는 개선된 전류 전달 오차를 보였다. 매그나칩/SK하이닉스 0.35㎛ 공정으로 칩 제작을 통한 실험 결과, 저장 시간에 따르는 전류 전달 오차가 5% 이하로 개선되는 것을 검증하였다.

Turn-off time improvement by fast neutron irradiation on pnp Si Bipolar Junction Transistor

  • Ahn, Sung Ho;Sun, Gwang Min;Baek, Hani
    • Nuclear Engineering and Technology
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    • 제54권2호
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    • pp.501-506
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    • 2022
  • Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

탄소나노튜브 가용체 초소형 퓨즈의 한계 전류 특성 (Limited Current Characteristics of Carbon Nanotube Elements Miniature Fuses)

  • 노성여;진상준;이선우
    • 한국전기전자재료학회논문지
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    • 제33권1호
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    • pp.45-49
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    • 2020
  • In this paper, we prepared miniature fuse fabricated with carbon nanotube (CNT) fiber for the use of low rated current under 1 A and high speed operation under 4ms. CNT fuses were fabricated in the form of universal modular fuse (UMF) with different diameter of CNT fibers defined by multiplying the CNT threads. Electrical properties of the CNT fuses were measured such as resistance, rated current, and operation time with current. Resistance of the CNT fuse decreased and rated current increased with the diameter of the CNT fuses, respectively. Consequently, the operation time with current increased with the diameter of the CNT fuses. The CNT fuses fabricated in this work had broad range of low rated current from 0.05 to 1.25 A by multiplying the CNT threads. Operation time was measured about 3.6ms which was applicable to the UMF.

이온유체방정식을 이용한 Plasma Sheath 시변 해석 (Analysis of Time-Dependent Behavior of Plasma Sheath using Ion Fluid Model)

  • 이호준;이해준
    • 전기학회논문지
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    • 제56권12호
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    • pp.2173-2178
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    • 2007
  • Dynamics of plasma sheath was analyzed using simple ion fluid model with poison equation. Incident ion current, energy, potential distribution and space charge density profile were calculated as a function of time. The effects of initial floating sheath on the evolution of biased sheath were compared with ideal matrix sheath. The effects of finite rising time of pulse bias voltage on the ion current and energy was studied. The influence of surface charging on the evolution of sheath was also investigated

결정립 제어 레오로지 소재의 성형공정과 기계적 성질 (Forming Process and Mechanical Properties of Grain Controlled Rheology Material)

  • 서판기;강충길
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 춘계학술대회 논문집
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    • pp.463-466
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    • 2005
  • The microstructure and mechanical properties of rheocast A356 aluminum alloy by electromagnetic stirring are studied. In the electromagnetic stirring, main parameters are stirring current and stirring time. Stirring current is ranged from 0 A to 60 A, and stirring time is 20, 40, and 60 sec. In the rheocasting, injection velocity and applied pressure are changed. In this paper, the effect of stirring current and stirring time on the morphology and mechanical properties are investigated and analyzed.

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불평등전계중에서 임펄스전압에 대한 $SF_6$ 기체의 전구방전과정의 분석 (Analysis of Predischarge Processes of $SF_6$ Gas Stressed by lmpulse Voltages under Nonuniform Electric Field)

  • 이복희;이경옥;이창준;백승권
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.85-93
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    • 2000
  • In this paper, the predischarge propagation processes of SF\ulcorner gas stressed by impulse voltages under nonuniform electric field perturbed by a needle protrusion are described. The statistical and formative time-lags and the time interval between leader pulses were investigated on the basis of the predischarge current measured in the gas pressure range of 0.1~0.5 MPa. The predischarge current is closely related to the waveform, amplitude and polarity of applied votages, the gas pressure and the gap geometry. Both the positive and negative predischarge processes in nonuniform electric field develop in a regime of stepwise leader propagation leading to electrical breakdown. The mean of the time interval between leader pulses gives about a factor of 10 higher for the negative than for the positive leader current puls-es. According as the gas pressure increases, the statistical time-lag was almost unchangeable, but the formative time-lag was gradually decreased.

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A Study On the Retention Time Distribution with Plasma Damage Effect

  • Yi Jae Young;Szirmay Laszlo;Yi Cheon Hee
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.460-462
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    • 2004
  • The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

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직류직권 모타용 보상된 Bang-Bang 전류제어기 개발 (The development of compensated bang-bang curent controller for DC series wound motor)

  • 김종건;이만형;배종일
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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    • pp.52-55
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    • 1996
  • In order to establish the robust current controller design technique of series wound motor driver system. This paper proposes a method of compensated Bang-Bang current control using a series wound motor driver system under improperly variable load. To get minimum time torque control. A compensated Bang-Bang current controller structure is simpler than the structure of PID plus Bang-Bang controller. This paper shows that a general 8 bits microprocessor be used efficiently implementing such an algorithm. The calculation time of software is extremely small when compared with conventional PID plus Bang-Bang a controller. Both nonlinear operating characteristics of Digital switching elements and Describing Function methods are used for the analysis and synthesis. Real time implementation of compensated Bang-Bang current is achieved. Concept design strategy of the control and PWM waveform generation algorithms are presented in the paper.

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