• Proceedings of the KWS Conference
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• 2001.05a
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• pp.220-223
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• 2001

In this study, CT specimens were prepared hem ASTM SA516 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -l$0^{\circ}C$ and -l2$0^{\circ}C$ and in the range of stress ratio of 0.1, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ΔK$_{th}$ in the early stage of fatigue crack growth ( Region I ) and stress intensity factor range ΔK in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN - ΔK in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region H and the cryogenic-brittleness greatly affect a material with decreasing temperature.e.greatly affect a material with decreasing temperature.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.2
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• pp.223-231
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• 2001

In order to provide some insights into the influence of electric field, gas composition, and gas temperature on electron energy distribution and electron transport characteristics, the Boltzmann equation was solved by using cross section data for electron collisions, Critical electric fields for the corona development in dry air and flue gas are 150 and 80 Td, respectively. It was seen that the decrease of critical electric field in flue gas is mainly caused by the $H_2O$ addition through the comparison of ionization and attachment coefficients of gas components. Increase of $O_2$, $H_2O$, and $CO_2$ contents in gas affected discharge characteristics according to their reciprocal characteristics between lowering the ionization threshold and increasing the electro-negativity. As electric field increases, electrons with higher energies in the electron energy distribution also increase. The mean and characteristic electron energies also linearly increase with electric field. The variation of flue gas temperature did rarely affect on the electron energy distribution function and electron transport characteristics, because the gas temperature is several hundreds or thousands times lower than the electron temperature.

• Advances in nano research
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• v.5 no.1
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• pp.61-67
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• 2017

A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

• Journal of Information Display
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• v.13 no.1
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• pp.51-54
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• 2012

In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2610-2615
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• 2021

The prediction of irradiation-induced transition temperature shift for RPV steels is an important method for long term operation of nuclear power plant. Based on the irradiation embrittlement data, an irradiation-induced transition temperature shift prediction model is developed with machine learning method XGBoost. Then the residual, standard deviation and predicted value vs. measured value analysis are conducted to analyze the accuracy of this model. At last, Cu content threshold and saturation values analysis, temperature dependence, Ni/Cu dependence and flux effect are given to verify the reliability. Those results show that the prediction model developed with XGBoost has high accuracy for predicting the irradiation embrittlement trend of RPV steel. The prediction results are consistent with the current understanding of RPV embrittlement mechanism.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• Korean Journal of Remote Sensing
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• v.22 no.6
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• pp.507-518
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• 2006

The radiation at $11{\mu}m$ absorbed more than at $12{\mu}m$ when aerosols is loaded in the atmosphere, whereas it will be the other way around when cloud is present. The difference of the two channels provides an opportunity to detect aerosols such as Yellow Sand even with the presence of clouds and at night. However problems associated with this approach arise because the difference can be affected by various atmospheric and surface conditions. In this paper, we has analyzed how the threshold and sensitivity of the brightness temperature difference between two channel (BTD) vary with respect to the conditions in detail. The important finding is that the threshold value for the BTD distinguishing between aerosols and cloud is $0.8^{\circ}K$ with the US standard atmosphere, which is greater than the typical value of $0^{\circ}K$. The threshold and sensitivity studies for the BTD show that solar zenith angle, aerosols altitude, surface reflectivity, and atmospheric temperature profile marginally affect the BTD. However, satellite zenith angle, surface temperature along with emissivity, and vertical profile of water vapor are strongly influencing on the BTD, which is as much as of about 50%. These results strongly suggest that the aerosol retrieval with the BTD method must be cautious and the outcomes must be carefully calibrated with respect to the sources of the error.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.2
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• pp.18-23
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• 1975

The dc conductivity, ac conductivity and switching effect of As.Te-Si.Ge have beon investigated. The dc conductivity ranged from $3{\times}10^{-7}{\Omega}^{-1}cm^{-1}$ to $1.5{\times}10^{-8}{\Omega}^{-1}cm^{-1}$ at room temperature and was found to be expressed by ${\sigma}$ = ${\sigma}_0$exp(-${\Delta}$E/kT) below the phase transition temperature Tg. The ac conductivity was much higher than dc conductivity and this result is consistent to experimental formula ${\sigma}$(w)=${\sigma}_0+Aw^n$. In the temperature range of 298$^{\circ}K$ ~ $473^{\circ}K$ the ac conductivity was independent of temperature at 200KHs. At lower frequencies the ac conductivity increased strong1y with temperature. Also, it has been found that all samples showed a threshold switching, but not a memory switching.

• Korean journal of applied entomology
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• v.62 no.4
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• pp.385-388
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• 2023

Gypsy moth (Lymantria dispar), a polyphagous insect pest belonging to the family Lymantriidae, is widely distributed in Korea, Japan, Siberia, Europe, and North America. They pose a threat to various host plants including pear trees, apple trees, and blueberries. Traditionally considered a forest pest, the increasing incursion of gypsy moths into agricultural land near forested areas has intensified damage to crops lacking effective control methods. This study aimed to investigate the temperature-dependent development of gypsy moths to enhance outbreak prediction and advance technology development. The effects of temperature on development of each life stage were investigated under constant temperature conditions of 18, 21, 24, 27, 30, and 33℃ (14L:10D, RH 60±5%) utilizing egg masses collected in Jeollanam-do Jangheung-gun in 2021. The results revealed that higher temperatures accelerated the development rate of the gypsy moth larvae with optimal development occurring at 30℃. However, the survival rate was lowest at 33℃. At the favorable temperature of 30℃, the total development period was 43.8 days for females and 42.5 days for males. The developmental threshold temperature were 13.1℃ for females and 12.5℃ for males, with effective accumulated temperature of 641.1 DD and 657.8 DD, respectively.

• Journal of Photoscience
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• v.7 no.4
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• pp.161-167
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• 2000

Temperature-dependent electroretinogram responses were investigated in the dark adapted bullfrog eyes within the physiological temperature range 0-40$\^{C}$. In hypothermic process(25→0→25$\^{C}$), the amplitude of b-and c-wave decreased with lowering the temperature again. Both b-wave amplitude and threshold responses were maximal around 15$\^{C}$ during the temperature increment. Upon warming to room temperature again (25$\^{C}$), the b-wave amplitude was approximately doubled as compared to that of control without temperature changes. During the hyperthermic process (25→40→25$\^{C}$), however, the responses decreased with warming, and the wave amplitude failed to recover by cooling to 25$\^{C}$ again. As describe above, the recoveries of ERG in both processes show the striking difference. The hypothermia induces the amplification of the b-wave, that is, enhances the retinal function with the temperature recovery toward room temperature. While the hypertherima produces the decrease of the b-wave even though recovered to room temperature, which indicates an irreversible retina. The morphological alteration is shown both hypothermic and hyperthermic process, such as an appearance of large vacuoles and degenerating outer segments, more intense in hyperthermia, similar to light induced damage.