• Geomechanics and Engineering
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• v.16 no.1
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• pp.49-58
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• 2018

Open-mode cracks could be commonly observed in layered rocks. A concept model is firstly used to explore the mechanism of the vertical cracks (VCs) in the top layer. Then the crack behaviour of the two-layer model is simulated based on a cohesive zone model (CZM) for layer interfaces and a plastic-damage model for rocks. The model indicates that the tensile stress normal to the VCs changes to compression if the crack spacing to layer thickness ratio is lower than a threshold. The results indicate that there is a threshold for interfacial shear strength that controls the crack patterns of the layered system. If the shear strength is lower than the threshold, the top layer is meshed by the VCs and interfacial cracks (ICs). When the shear strength is higher than the threshold, the top layer is meshed by the VCs and parallel cracks (PCs). If the shear strength is comparative to the threshold, a combining pattern of VCs, PCs and ICs for the top layer can be formed. The evolutions of stress distribution in the crack-bound block indicate that the ICs and PCs can reduce the load transferred for the substrate layer, and thus leads to a crack saturation state.

• Journal of Industrial Technology
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• v.30 no.B
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• pp.17-23
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• 2010

Since the propagation of a short fatigue crack is directly related to the large crack which causes the fracture of bulk specimen, the detailed study on the propagation of the short crack is essential to prevent the fatigue fracture. However, a number of recent studies have demonstrated that the short crack can grow at a low applied stress level which are predicted from the threshold condition of large crack. In present study, the threshold condition for the propagation of short fatigue crack is examined with respect to the micro-structure and cyclic loading history. Specimens employed in this study were decarburized eutectoid steels which have various decarburized ferrite volume fraction. Rotating bending fatigue test was carried out on these specimens with the special emphasis on the "critical non-propagating crack length" It is found that the reduction of the endurance limit of their particular micro-structures can be due to the increase of the length of critical non-propagating crack, and the quantitative relationship between the threshold stress ${\sigma}_{wo}$ and the critical non-propagating crack length $L_c$ can be written as ${\sigma}_{wo}{^m}{\cdot}L_c=C$ where m,C is constant. Further experiments were carried out on cyclic loading history on the length of critical non-propagating crack. It shown that the length of critical non-propagating crack is closely related to cyclic loading history.

• Journal of Ocean Engineering and Technology
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• v.6 no.1
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• pp.131-139
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• 1992

The understanding and appllication of fatigue crack propagation mechanism in variable amplitude loading is very important for life prediction of the air travel structures. Particularly, the retardation and arrest behavior of fatigue crack propagation by single tension overloading is essential to the understanding and appllication of fatigue crack propagation mechanism in variable amplitude loading. Numerous studies of the retardation behavior have been performed, however investigations of the arrest behavior have not been enough yet. As for the arrest behavior, Willenborg had reported that the overload shut-off ratio $[R_{so}=(K_{OL})/K_{max})_{crack arrest}]$ had been the material constant, but recently several investigators have reported that the overload shut-off ratio depends upon the stress ratio. In this study, authors have investigated the effect of stress ratio on the threshold overload shut-off ratio to generate arrest of fatigue crack growth in high tensile aluminum alloy 7075-T735 which have used in material for air travel structures, It has been $-0.4\leqqR\leqq0.4$ till now, the region of stress ratio investigated. The threshold overload shut-off ratio has decreased as stress ratio has increased in overall region of -$-0.4\leqqR\leqq0.4$ and the linearity has been seen in this material. Moreover, the experimental equation between $R_{so}$ and R has been made; The relation has been $R_{so}=-R+2.6$.

• The Journal of Asian Finance, Economics and Business
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• v.9 no.1
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• pp.177-187
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• 2022

Theoretical literature agrees on the interaction between financial instability and economic activity but explains it's dynamic in two points of view: one is that the transmission mechanism occurs in one unique regime and the other reckons a shift of regime leads to the alteration of the transmission mechanism. This study aims to find evidence of the multi-regime transmission for ASEAN developing countries. The author employs the technique of Threshold vector auto regression using the financial stress index standing for financial instability. Monthly data is collected, covering a period long enough with many episodes of high stress in recent decades. There are two conclusions: (1) A financial shock has a negative and stronger impact on economic activity during a high-stress period than it does during a low-stress period; (2) the response of economic activity to a negative financial shock during high-stress periods is stronger than it is during normal times. The findings point to the importance of the financial stress index as an additional early warning indicator for the real economy sector, as well as the positive effect that a reduction in financial stress may have on economic activity, implying the importance of "unconventional" monetary policy in times of high financial stress.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1266-1272
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• 2012

An InGaZnO thin film transistor with different gate lengths and widths have been fabricated and their device degradations with device sizes have been also performed after negative gate bias stress. The threshold voltage and subthreshold swing have been decreased with decrease of gate length. However, the threshold voltages were increased with the decrease of gate lengths. The transfer curves were negatively shifted after negative gate stress and the threshold voltage was decreased. However, the subthreshold swing was not changed after negative gate stress. This is due to the hole trapping in the gate dielectric materials. The decreases of the threshold voltage variation with the decrease of gate length and the increase of gate width were believed due to the less hole injection into gate dielectrics after a negative gate stress.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.72-79
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• 1994

In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${\Delta}V_{t}$) and effective channel shortening length (${\Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and ΔLS1HT is calculated by using trapped electron charges. (${\Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${\Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${\Delta}V_{t}$) and (${\Delta}L_{H}$) are function of initial gate current and device channel length.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.114-121
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• 2014

We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.2
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• pp.271-277
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• 1988

The threshold fatigue crack growth and the stable crack propagation behaviors were studied in 7017 T 651, 7020 T 651 and 5083 H 115 aluminum alloys. The threshold (.DELTA. K $_{th}$) fatigue crack growth can be expressed by the equation .DELTA. $K_{th}$) = .DELTA. $K_{tho}$(1-R)$^{r}$ , where R is stress ratio, .DELTA. $K_{tho}$ is .DELTA. K at R = 0 and r is material constant. The stable crack growth rate against stress intensity factor range .DELTA. K exhibits the trilinear form with two transitions and results of investigation on crack closure phenomena showed that the crack opening stress intensity factor $K_{op}$ is approximately equal to R $K_{max}$. + .DELTA. K $_{th}$.th/.